VISHAY SI8817DB

Si8817DB
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET® Power MOSFET
PRODUCT SUMMARY
RDS(on) () Max.
ID (A)a, e
0.076 at VGS = - 4.5 V
- 2.9
0.100 at VGS = - 2.5 V
- 2.5
0.145 at VGS = - 1.8 V
- 2.1
0.320 at VGS = - 1.5 V
- 0.5
VDS (V)
- 20
Qg (Typ.)
7.5 nC
• Small 0.8 mm x 0.8 mm outline area
• Low 0.4 mm max. profile
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
MICRO FOOT
Bump Side View
Backside View
G
1
D
S
3
AF
2
xxx
S
• Load switches and chargers switches
• Battery management
• DC/DC converters
• For smart phones and tablet PCs
S
G
4
D
Device Marking: A F
xxx = Date/Lot Traceability Code
P-Channel MOSFET
Ordering Information: Si8817DB-T2-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
TA = 70 °C
TA = 25 °C
- 2.3a
ID
- 2.1b
- 1.7b
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TA = 70 °C
TA = 25 °C
- 0.7a
IS
- 0.4b
0.9a
0.6a
PD
0.5b
Package Reflow Conditionsc
W
0.3b
TA = 70 °C
Operating Junction and Storage Temperature Range
A
- 15
TA = 25 °C
Maximum Power Dissipation
V
- 2.9a
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
- 55 to 150
VPR
260
IR/Convection
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on TA = 25 °C.
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8817DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
a, b
Maximum Junction-to-Ambient
t=5s
Maximum Junction-to-Ambientc, d
t=5s
RthJA
Typical
Maximum
105
135
200
260
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 185 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 330 °C/W.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
V
- 12
ID = - 250 µA
mV/°C
2.5
VGS(th)
VDS = VGS, ID = - 250 µA
-1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 70 °C
- 10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Transconductancea
gfs
Forward
VDS - 5 V, VGS = - 4.5 V
- 0.4
-5
µA
A
VGS = - 4.5 V, ID = - 1 A
0.061
0.076
VGS = - 2.5 V, ID = - 1 A
0.080
0.100
VGS = - 1.8 V, ID = - 0.5 A
0.110
0.145
VGS = - 1.5 V, ID = - 0.5 A
0.165
0.320
VDS = - 10 V, ID = - 1 A
5

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
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2
615
VDS = - 10 V, VGS = 0 V, f = 1 MHz
75
VDS = - 10 V, VGS = - 8 V, ID = - 1 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A
td(off)
12.5
19
7.5
12
1
VDD = - 10 V, RL = 10 
ID  - 1 A, VGEN = - 4.5 V, Rg = 1 

14
20
40
20
40
52
100
tf
22
45
td(on)
6
15
tr
td(off)
nC
1.9
VGS = - 0.1 V, f = 1 MHz
td(on)
tr
pF
90
VDD = - 10 V, RL = 10 
ID  - 1 A, VGEN = - 8 V, Rg = 1 
tf
For technical questions, contact: [email protected]
10
20
60
120
23
45
ns
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8817DB
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
IS
TA = 25 °C
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 0.7
- 15
IS = - 1 A, VGS = 0 V
IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.75
- 1.2
V
30
60
ns
14
30
nC
13
17
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8817DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
10
VGS = 5 V thru 3 V
VGS = 2.5 V
8
9
ID - Drain Current (A)
ID - Drain Current (A)
12
VGS = 2 V
6
3
6
TC = 25 °C
4
TC = 125 °C
2
VGS = 1.5 V
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
3.0
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
2.5
Transfer Characteristics
1000
0.40
VGS = 1.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
800
0.30
VGS = 1.8 V
0.20
VGS = 2.5 V
Ciss
600
400
0.10
200
Coss
Crss
VGS = 4.5 V
0
0.00
0
3
6
9
ID - Drain Current (A)
12
0
15
4
On-Resistance vs. Drain Current and Gate Voltage
12
16
20
Capacitance
1.4
8
ID = 1 A
RDS(on) - On-Resistance (Normalized)
ID = 1 A
VGS - Gate-to-Source Voltage (V)
8
VDS - Drain-to-Source Voltage (V)
VDS = 10 V
6
VDS = 5 V
4
VDS = 16 V
2
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
Gate Charge
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4
15
1.3
VGS = 4.5 V, 2.5 V
1.2
VGS = 1.8 V
1.1
VGS = 1.5 V
1.0
0.9
0.8
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8817DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.40
ID = 1 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.32
TJ = 150 °C
10
TJ = 25 °C
1
0.24
0.16
TJ = 125 °C
0.08
TJ = 25 °C
0.1
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2
3
4
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
14
0.9
12
0.8
10
Power (W)
VGS(th) (V)
0.7
0.6
ID = 250 μA
0.5
6
4
0.4
0.3
- 50
8
2
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
Threshold Voltage
1
Time (s)
10
100
1000
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1
1 ms
10 ms
0.1
TA = 25 °C
100 ms
1 s, 10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8817DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.8
3.0
Power Dissipation (W)
ID - Drain Current (A)
2.5
2.0
1.5
1.0
0.6
0.4
0.2
0.5
0.0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
T A - Ambient Temperature (°C)
150
Power Derating
Note:
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
For technical questions, contact: [email protected]
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8817DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 185 °C/W
Single Pulse
0.01
0.0001
0.001
3. T JM - T A = PDMZthJA(t)
4. Surface Mounted
0.01
0.1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 Board with maximum Copper)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 330 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 Board with minimum Copper)
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
For technical questions, contact: [email protected]
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8817DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH)
S
D
G
e
xxx
S
s
AF
D
4xØb
s
e
Mark on Backside of die
D
4 x Ø 0.205 to 0.225 Note 4
2
A2
Solder Mask ~ Ø 0.215
A
e
3
4
1
A1
e
Recommended Land
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø0.165 mm to Ø 0.185 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5. is location of pin 1.
·
Dim.
A
Millimetersa
Inches
Min.
Nom.
Max.
Min.
Nom.
Max.
0.314
0.357
0.400
0.0124
0.0141
0.0157
A1
0.127
0.157
0.187
0.0050
0.0062
0.0074
A2
0.187
0.200
0.213
0.0074
0.0079
0.0084
b
0.165
0.175
0.185
0.0064
0.0068
0.0072
e
0.400
0.0157
s
0.180
0.200
0.220
0.0070
0.0078
0.0086
D
0.760
0.800
0.840
0.0299
0.0314
0.0330
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62759.
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
For technical questions, contact: [email protected]
www.vishay.com
8
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
Mouser Electronics
Authorized Distributor
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SI8817DB-T2-E1