Si8467DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.073 at VGS = - 4.5 V - 3.4 0.125 at VGS = - 2.5 V - 2.6 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra-Small 1 mm x 1 mm Maximum Outline • Ultra-Thin 0.548 mm Maximum Height • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switches, Battery Switches and Charger Switches in Portable Device Applications • DC/DC Converters MICRO FOOT Bump Side View Backside View S G 1 D S 3 4 XXX 2 8 467 S G Device Marking: 8467 xxx = Date/Lot Traceability Code D P-Channel MOSFET Ordering Information: Si8467DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS TA = 70 °C TA = 25 °C PD Package Reflow Conditionsc A - 15 - 1.5a - 0.65b 1.1a 0.78b W 0.5b TA = 70 °C Operating Junction and Storage Temperature Range - 2.5b 1.8a TA = 25 °C Maximum Power Dissipation - 2.7a - 2.0b TA = 70 °C Pulsed Drain Current V - 3.7a TA = 25 °C TA = 70 °C Unit TJ, Tstg - 55 to 150 VPR 260 IR/Convection 260 °C Notes: a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TA = 25 °C. Document Number: 65930 S10-0643-Rev. A, 22-Mar-10 www.vishay.com 1 Si8467DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta, b t = 10 s Maximum Junction-to-Ambientc, d t = 10 s Typical Maximum 55 70 125 160 RthJA Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board with full copper. b. Maximum under steady state conditions is 100 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper. d. Maximum under steady state conditions is 190 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS a Drain-Source On-State Resistancea RDS(on) a Forward Transconductance gfs mV/°C 3.1 - 0.6 - 1.5 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V ID(on) On-State Drain Current V - 13 - 10 µA A VGS = - 4.5 V, ID = - 1 A 0.06 0.073 VGS = - 2.5 V, ID = - 1 A 0.102 0.125 VDS = - 10 V, ID = - 1 A 6 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 475 VDS = - 10 V, VGS = 0 V, f = 1 MHz 135 pF 110 VDS = - 10 V, VGS = - 10 V, ID = - 1 A VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A 14 21 6.9 11 1 nC 2.4 VGS = - 0.1 V, f = 1 MHz td(on) VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω tr Ω 6 25 50 22 45 25 50 tf 10 20 td(on) 7 15 10 20 td(off) VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω tr td(off) tf 22 45 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TA = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 1.5 - 15 IS = - 1 A, VGS = 0 V IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 22 40 ns 10 20 nC 8 14 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65930 S10-0643-Rev. A, 22-Mar-10 Si8467DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 5 V GS = 5 V thru 3.5 V V GS = 3 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 9 V GS = 2.5 V 6 3 2 T C = 25 °C V GS = 2 V 3 1 T C = 125 °C 0 0.0 V GS = 1.5 V 0.5 1.0 1.5 2.0 2.5 T C = - 55 °C 0 0.0 3.0 0.5 V DS - Drain-to-Source Voltage (V) 2.0 2.5 Transfer Characteristics 800 0.16 600 C - Capacitance (pF) 0.20 V GS = 2.5 V 0.12 Ciss 400 Coss 200 0.08 V GS = 4.5 V Crss 0 0.04 0 3 6 9 12 0 15 4 8 12 16 20 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.5 10 ID = 1 A ID = 1 A 1.4 V GS = 4.5 V 8 V DS = 5 V 6 V DS = 10 V V DS = 16 V 4 1.3 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 V GS - Gate-to-Source Voltage (V) Output Characteristics R DS(on) - On-Resistance (Ω) 1.0 1.2 V GS = 2.5 V 1.1 1.0 0.9 2 0.8 0 0 3 6 9 12 15 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) T J - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 65930 S10-0643-Rev. A, 22-Mar-10 150 www.vishay.com 3 Si8467DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.20 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 1.5 A T J = 150 °C 10 T J = 25 °C 1 0.1 0.0 0.16 0.12 T J = 125 °C 0.08 T J = 25 °C 0.04 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 V GS - Gate-to-Source Voltage (V) V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 25 1.4 1.3 ID = 250 μA 20 1.2 Power (W) VGS(th) (V) 1.1 1.0 0.9 15 10 0.8 5 0.7 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) T J - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* I D - Drain Current (A) 10 100 μs 1 1 ms 10 ms 0.1 100 ms, 1 s 10 s, DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65930 S10-0643-Rev. A, 22-Mar-10 Si8467DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 1.5 1.2 Power Dissipation (W) I D - Drain Current (A) 3 2 1 0.9 0.6 0.3 0 0.0 0 25 50 75 100 T A - Ambient Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating Note: When mounted on 1" x 1" FR4 with full copper. * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65930 S10-0643-Rev. A, 22-Mar-10 www.vishay.com 5 Si8467DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 100 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 190 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper) www.vishay.com 6 Document Number: 65930 S10-0643-Rev. A, 22-Mar-10 Si8467DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (2 x 2, 0.5 mm PITCH) 3 1 4 A1 A2 e 2 A 4 x Ø 0.24 to 0.26 Note 4 Solder Mask ~ Ø 0.25 Bump Note 2 Recommended Land S S D G e 8467 s XXX D 4xØb s Mark on Backside of Die e D Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter ∅ 0.30 mm to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. • is location of pin 1. Dim. Millimetersa Inches Min. Nom. Max. Min. Nom. Max. A 0.462 0.505 0.548 0.0181 0.0198 0.0215 A1 0.220 0.250 0.280 0.0086 0.0098 0.0110 A2 0.242 0.255 0.268 0.0095 0.0100 0.0105 b 0.300 0.310 0.320 0.0118 0.0122 0.0126 e 0.500 0.0197 s 0.230 0.250 0.270 0.0090 0.0098 0.0106 D 0.920 0.960 1.000 0.0362 0.0378 0.0394 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65930. Document Number: 65930 S10-0643-Rev. A, 22-Mar-10 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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