DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BZA462A Quadruple ESD transient voltage suppressor Product data sheet Supersedes data of 1998 Oct 30 1999 May 25 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA462A FEATURES PINNING • ESD rating >15 kV, according to IEC1000-4-2 PIN DESCRIPTION • SOT457 surface mount package 1 cathode 1 • Common anode configuration 2 common • Non-clamping range −0.5 to 6.2 V 3 cathode 2 • Maximum reverse peak power dissipation: 24 W at tp = 1 ms 4 cathode 3 • Maximum clamping voltage at peak pulse current: 9 V at IZSM = 2.66 A. 5 common 6 cathode 4 APPLICATIONS handbook, halfpage 6 • Computers and peripherals 5 4 1 • Audio and video equipment 3 2 • Communication systems 4 5 • Medical equipment. 6 1 2 3 Top view DESCRIPTION Monolithic transient voltage suppressor diode in a six lead SOT457 (SC-74) package for 4-bit wide ESD transient suppression at 6.2 V level. MAM357 Marking code: Z2t. Fig.1 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode IZ working current Ts = 60 °C; note 1 − note 2 mA IF continuous forward current Ts = 60 °C − 100 mA IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 3.75 A IZSM non-repetitive peak reverse current tp = 1 ms; square pulse; see Fig.2 − 2.66 A Ptot total power dissipation Ts = 60 °C; see Fig.3 − 720 mW PZSM non repetitive peak reverse power dissipation square pulse; tp = 1 ms; see Fig.4 − 24 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Notes 1. Ts is the temperature at the soldering point of the anode pin. 2. DC working current limited by Ptot max. 1999 May 25 2 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA462A THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point VALUE UNIT 125 K/W one or more diodes loaded ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VZ working voltage IZ = 1 mA 5.89 6.2 6.51 V VF forward voltage IF = 200 mA − − 1.3 V VZSM non-repetitive peak reverse voltage IZSM = 3.5 A; tp = 1 ms − − 9 V IR reverse current VR = 4 V − − 700 nA rdif differential resistance IZ = 1 mA − − 300 Ω SZ temperature coefficient of working voltage IZ = 5 mA − 1.2 − mV/K Cd diode capacitance see Fig.5 VR = 0; f = 1 MHz − − 200 pF VR = 4 V; f = 1 MHz − − 110 pF 1999 May 25 3 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA462A MBK479 10 MDA198 1000 Ptot handbook, halfpage handbook, halfpage (mW) 800 600 IZSM (A) 400 200 1 10−1 1 0 10 tp (ms) 0 50 100 150 Ts (oC) 200 All diodes loaded. Fig.2 Maximum non-repetitive peak reverse current as a function of pulse time. Fig.3 Power derating curve. MBK481 102 handbook, halfpage MBK480 200 Cd handbook, halfpage (pF) 160 PZSM (W) 120 10 80 40 1 10−1 0 1 tp (ms) 0 10 1 2 3 4 5 6 VR (V) PZSM = VZSM × IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM. Tj = 25 °C; f = 1 MHz. Fig.4 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). 1999 May 25 Fig.5 4 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor ESD TESTER RZ 450 Ω BZA462A RG 223/U 50 Ω coax CZ DIGITIZING OSCILLOSCOPE 10× ATTENUATOR 50 Ω note 1 Note 1: attenuator is only used for open socket high voltage measurements IEC 1000-4-2 network CZ = 150 pF; RZ = 330 Ω 1/4 BZA462A vertical scale = 100 V/Div horizontal scale = 50 ns/Div vertical scale = 10 V/Div horizontal scale = 50 ns/Div GND GND unclamped +1 kV ESD voltage waveform (IEC 1000−4−2 network) clamped +1 kV ESD voltage waveform (IEC 1000−4−2 network) GND GND vertical scale = 100 V/Div horizontal scale = 50 ns/Div unclamped −1 kV ESD voltage waveform (IEC 1000−4−2 network) vertical scale = 10 V/Div horizontal scale = 50 ns/Div clamped −1 kV ESD voltage waveform (IEC 1000−4−2 network) Fig.6 ESD clamping test set-up and waveforms. 1999 May 25 5 MBK478 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA462A APPLICATION INFORMATION Typical common anode application A quadruple transient suppressor in a SOT457 package makes it possible to protect four separate lines using only one package. Two simplified examples are shown in Figs 7 and 8. handbook, full pagewidth keyboard, terminal, printer, etc. A B C D I/O FUNCTIONAL DECODER BZA462A GND MBK476 Fig.7 Computer interface protection. VDD handbook, full pagewidth VGG address bus RAM I/O ROM data bus CPU CLOCK control bus BZA462A GND MBK477 Fig.8 Microprocessor protection. 1999 May 25 6 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA462A Device placement and printed-circuit board layout Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA462A is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a minimum. This includes the lead length of the suppression element. In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended: 1. Place the suppression element close to the input terminals or connectors. 2. Keep parallel signal paths to a minimum. 3. Avoid running protection conductors in parallel with unprotected conductors. 4. Minimize all printed-circuit board loop areas including power and ground loops. 5. Minimize the length of the transient return path to ground. 6. Avoid using shared transient return paths to a common ground point. 1999 May 25 7 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA462A PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 1999 May 25 REFERENCES IEC JEDEC EIAJ SC-74 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA462A DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 May 25 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp10 Date of release: 1999 May 25 Document order number: 9397 750 05926