DISCRETE SEMICONDUCTORS DATA SHEET M3D184 BZA100 18-fold ESD transient voltage suppressor Product data sheet Supersedes data of 1996 Mar 21 1997 Dec 02 NXP Semiconductors Product data sheet 18-fold ESD transient voltage suppressor BZA100 FEATURES DESCRIPTION • SO20 SMD package allows 18 separate voltage regulator diodes in a common anode configuration 18-fold monolitic transient voltage suppressor. Its 18-fold junction common anode design protects 18 separate lines using only one package. This device is ideal for situations where board space is a premium. • Working voltage: typ. 6.8 V • Forward voltage: max. 1.3 V • Maximum reverse peak power dissipation: 27.5 W at tp = 1 ms • Maximum clamping voltage at peak pulse current: 11 V at 2.5 A PINNING handbook, 4 columns • Low leakage current: max. 2 µA k1 1 20 k18 • ESD rating >8 kV, according IEC 801-2. k2 2 19 k17 k3 3 18 k16 k4 4 17 k15 k5 5 APPLICATIONS • Where transient overvoltage protection in voltage and ESD sensitive equipment is required such as: PIN DESCRIPTION 1 to 5 cathode (k1 to k5) 6 and 16 common anode (a1; a2) 7 to 15 cathode (k6 to k14) 17 to 20 cathode (k15 to k18) 20 19 18 17 16 15 14 13 12 11 1 2 3 4 5 6 7 8 9 10 16 a2 SO20 a1 6 15 k14 k6 7 14 k13 k7 8 13 k12 k8 9 12 k11 k9 10 11 k10 MBG396 – Computers – Printers – Business machines – Communication systems Fig.1 Pin configuration for SO20 (SOT163-1) and symbol. – Medical equipment. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IZ working current − note 1 mA IF continuous forward current − 200 mA IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 4 A IZSM non-repetitive peak reverse current tp = 1 ms; square pulse; see Fig.2 − 2.5 A Ptot total power dissipation see Fig.3 up to Ts = 60 °C; note 2 − 1.6 W up to Tamb = 25 °C; note 3 − 1.25 W − 27.5 W PZSM non-repetitive peak reverse power dissipation tp = 1 ms; square pulse; see Fig.4 Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Notes 1. DC working current limited by Ptot max. 2. One or more diodes loaded; Ts is the temperature at the soldering point. 3. One or more diodes loaded; device mounted on a printed-circuit board with Rth a-s = 43.5 K/W. 1997 Dec 02 2 NXP Semiconductors Product data sheet 18-fold ESD transient voltage suppressor BZA100 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-s thermal resistance from junction to soldering point Rth j-a thermal resistance from junction to ambient VALUE UNIT 56.5 K/W 100 K/W MAX. UNIT one or more diodes loaded ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. Per diode VZ working voltage IZ = 5 mA 6.4 6.8 7.2 V VF forward voltage IF = 200 mA − − 1.3 V VZSM non-repetitive peak reverse voltage tp = 1 ms; IZSM = 2.5 A − − 11 V IR reverse current VR = 5.25 V − − 2 µA rdif differential resistance IZ = 1 mA − − 40 Ω IZ = 5 mA − − 8 Ω SZ temperature coefficient of working voltage IZ = 5mA − 3 − mV/K Cd diode capacitance see Fig.5 VR = 0; f = 1 MHz − − 120 pF VR = 5.25 V; f = 1 MHz − − 60 pF 1997 Dec 02 3 NXP Semiconductors Product data sheet 18-fold ESD transient voltage suppressor BZA100 GRAPHICAL DATA MBG393 MBG394 10 2.4 handbook, halfpage handbook, halfpage Ptot (W) IZSM (A) 1.6 1 0.8 10−1 10−1 1 10 0 10 2 t (ms) 103 p 0 50 100 Ts (oC) 150 All diodes loaded. Fig.2 Maximum non-repetitive peak reverse current as a function of pulse time. Fig.3 Power derating curve. MBG395 2 10halfpage handbook, MBG392 100 handbook, halfpage Cd (pF) PZSM (W) 80 10 60 1 10−1 1 10 40 10 2 t (ms) 103 p 0 2 4 VR (V) 6 PZSM = VZSM × IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM. Tj = 25 °C; f = 1 MHz. Fig.4 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). 1997 Dec 02 Fig.5 4 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet 18-fold ESD transient voltage suppressor BZA100 PACKAGE OUTLINE SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E A X c HE y v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 e bp detail X w M 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.3 0.1 2.45 2.25 0.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.51 0.49 0.30 0.29 0.05 0.419 0.043 0.055 0.394 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 inches 0.1 Z (1) θ Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT163-1 075E04 MS-013 1997 Dec 02 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 5 o 8 0o NXP Semiconductors Product data sheet 18-fold ESD transient voltage suppressor BZA100 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1997 Dec 02 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117027/00/02/pp7 Date of release: 1997 Dec 02 Document order number: 9397 750 03107