DATA SHEET dbook, halfpage M3D302 BZA408B Quadruple bidirectional ESD transient voltage suppressor Product data sheet Supersedes data of 1998 Jun 05 1998 Oct 15 NXP Semiconductors Product data sheet Quadruple bidirectional ESD transient voltage suppressor FEATURES BZA408B PINNING • ESD rating >15 kV, according to IEC1000-4-2 PIN • SOT457 surface mount package DESCRIPTION 1 • Non-clamping range: −5 V to +5 V cathode 1 2, 5 ground • Channel separation: >70 dB 3 cathode 2 • Low reverse current: <100 nA 4 cathode 3 • Low diode capacitance: <75 pF. 6 cathode 4 APPLICATIONS • Protection of equipment, connected to data and transmission lines, against voltage surges caused by electrostatic discharge e.g: handbook, halfpage 6 5 4 1 2 3 6 5 1 2 4 – Computers and peripherals – Audio and video equipment – Communication systems – Medical equipment Top view – Portable electronics. 3 MAM409 Marking code: Z8. DESCRIPTION 4-bit wide monolithic bidirectional ESD transient voltage suppressor in a six lead SOT457 (SC-74) package. Fig.1 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode (pin 2 and / or 5 connected to ground) IZSM non-repetitive peak reverse current tp = 1 ms; square pulse; see Fig.2 − 2 A PZSM non-repetitive peak power tp = 1 ms; square pulse − 20 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C 1998 Oct 15 2 NXP Semiconductors Product data sheet Quadruple bidirectional ESD transient voltage suppressor BZA408B THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point VALUE UNIT 340 K/W MAX. UNIT one or more diodes loaded ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. Per diode (pin 2 and / or 5 connected to ground) VRWM working reverse voltage − 5 V VR reverse voltage Itest = 5 mA 5.5 − V VZSM non-repetitive peak reverse voltage tp = 1 ms; IZSM = 2 A − 10 V IR reverse current VR = VRWM − 100 nA Cd diode capacitance see Fig.3 VR = 0; f = 1 MHz − 75 pF VR = 5 V; f = 1 MHz − 55 pF 70 − dB αch (p to p) pin to pin channel separation note 1; see Fig.4 Note 1. αch (p to p) is measured as follows: a −7 dBs sinewave of 400 Hz is connected to e.g. pin 6 and a −7 dBs sinewave of 1 kHz to pin 1. The 1 kHz signal of pin 1 is measured on pin 6 by means of a spectrum analyser with an input impedance of 1 MΩ. So αch (p to p) equals the 1 kHz level on pin 1 minus the 1 kHz level on pin 6. For the 400 Hz signal the same measurement is done in the opposite way. 1998 Oct 15 3 NXP Semiconductors Product data sheet Quadruple bidirectional ESD transient voltage suppressor BZA408B GRAPHICAL DATA MGR557 10 MGR558 80 handbook, halfpage handbook, halfpage Cd (pF) IZSM (A) 60 1 40 10−1 10−2 10−1 20 1 tp (ms) 10 0 1 2 3 4 VR (V) 5 Tj = 25 °C; f = 1 MHz. Fig.2 Maximum non-repetitive peak reverse current as a function of pulse time. Fig.3 Diode capacitance as a function of reverse voltage; typical values. handbook, full pagewidth coaxial cable with SMB connector SPECTRUM ANALYZER 1 MΩ SIGNAL GENERATOR SIGNAL GENERATOR DUT 600 Ω 1 6 600 Ω f = 1 kHz −7 dBs 2 5 f = 400 Hz −7 dBs 3 4 MGR556 Fig.4 Channel separation measurement setup. 1998 Oct 15 4 NXP Semiconductors Product data sheet Quadruple bidirectional ESD transient voltage suppressor handbook, full pagewidthESD TESTER 450 Ω RZ BZA408B RG 223/U 50 Ω coax DIGITIZING OSCILLOSCOPE 10× ATTENUATOR note 1 CZ 50 Ω Note 1: attenuator is only used for open socket high voltage measurements IEC1000-4-2 network CZ = 150 pF; RZ = 330 Ω 1/4 BZA408B vertical scale = 100 V/Div horizontal scale = 50 ns/Div vertical scale = 10 V/Div horizontal scale = 50 ns/Div GND GND unclamped +1 kV ESD voltage waveform (IEC1000-4-2 network) clamped +1 kV ESD voltage waveform (IEC1000-4-2 network) GND GND vertical scale = 10 V/Div horizontal scale = 50 ns/Div vertical scale = 100 V/Div horizontal scale = 50 ns/Div unclamped −1 kV ESD voltage waveform (IEC1000-4-2 network) clamped −1 kV ESD voltage waveform (IEC1000-4-2 network) Fig.5 ESD clamping test set-up and waveforms. 1998 Oct 15 5 MGR560 NXP Semiconductors Product data sheet Quadruple bidirectional ESD transient voltage suppressor BZA408B APPLICATION INFORMATION Typical bidirectional application A quadruple bidirectional transient suppressor in a SOT457 package makes it possible to protect four separate lines using only one package. One simplified example is shown in Fig.6. handbook, full pagewidth audio in L audio in R audio out L audio out R TVSET/VCR SCART CONNECTOR BZA408B GND MGR559 Fig.6 Scart connector protection. Device placement and printed-circuit board layout Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA408B is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a minimum. This includes the lead length of the suppression element. In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended: 1. Place the suppression element close to the input terminals or connectors. 2. Keep parallel signal paths to a minimum. 3. Avoid running protection conductors in parallel with unprotected conductors. 4. Minimize all printed-circuit board loop areas including power and ground loops. 5. Minimize the length of the transient return path to ground. 6. Avoid using shared transient return paths to a common ground point. 1998 Oct 15 6 NXP Semiconductors Product data sheet Quadruple bidirectional ESD transient voltage suppressor BZA408B PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 1998 Oct 15 REFERENCES IEC JEDEC EIAJ SC-74 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 NXP Semiconductors Product data sheet Quadruple bidirectional ESD transient voltage suppressor BZA408B DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1998 Oct 15 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115104/00/02/pp9 Date of release: 1998 Oct 15 Document order number: 9397 750 04313