PANASONIC MA3U649

Fast Recovery Diodes (FRD)
MA3U649
Silicon planar type (cathode common)
Unit : mm
For high-frequency rectification
6.5 ± 0.1
5.3 ± 0.1
4.35 ± 0.1
1.0 ± 0.2
1.0 ± 0.1
0.1 ± 0.05
0.93 ± 0.1
0.8 max.
2.5 ± 0.1
• Small U-type package for surface mounting
• Low-loss type with fast reverse recovery time trr
• Cathode common dual type
0.5 ± 0.1
1.8 ± 0.1
7.3 ± 0.1
■ Features
2.3 ± 0.1
0.5 ± 0.1
0.75 ± 0.1
■ Absolute Maximum Ratings Ta = 25°C
2.3 ± 0.1
4.6 ± 0.1
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
200
V
Non-repetitive peak reverse
surge voltage
VRSM
200
V
Average forward current*1
IF(AV)
5
A
Non-repetitive peak forward
surge current*2
IFSM
40
A
Junction temperature
Tj
−40 to +150
°C
Storage temperature
Tstg
−40 to +150
°C
1
2
3
1 : Anode
2 : Cathode
(Common)
3 : Anode
U-Type Package
Note) 1. *1 : TC = 25°C
*2 : Half sine-wave; 10 ms/cycle
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Repetitive peak reverse current
Conditions
Typ
Max
Unit
IRRM1
VRRM = 200 V, TC = 25°C
20
µA
IRRM2
VRRM = 200 V, Tj = 150°C
2
mA
Forward voltage (DC)
VF
IF = 2.5 A, TC = 25°C
Reverse recovery time*2
trr
IF = 1 A, IR = 1 A
Thermal resistance*1
Min
Rth(j-c)
Direct current (between junction and case)
0.98
V
30
ns
12.5
°C/W
Note) 1. Rated input/output frequency: 200 MHz
2. *1 : TC = 25°C
*2 : trr measuring circuit
50 Ω
50 Ω
trr
IF
D.U.T
5.5 Ω
IR
0.1 × IR
1
MA3U649
Fast Recovery Diodes (FRD)
IF  V F
104
1.6
1.4
Forward voltage VF (V)
–20°C
100°C
25°C
10−1
10−2
10−3
Ta = 150°C
103
Reverse current IR (µA)
Ta = 150°C
1
Forward current IF (A)
IR  VR
VF  Ta
10
1.2
IF = 5 A
1.0
0.8
2.5 A
1A
0.6
0.4
100°C
102
10
25°C
1
10−1
10−4
0.2
10−5
0
0.2
0.4
0.6
0.8
1.0
0
−40
1.2
Forward voltage VF (V)
10−2
0
IR  T a
160
200
VR = 200 V
100 V
10 V
100
10
1
f = 1 MHz
Ta = 25°C
20
10
0
0
40
80
120
Ambient temperature Ta
160
(°C)
200
0
50
100
150
200
250
Reverse voltage VR (V)
0
50
100
150
200
250
Reverse voltage VR (V)
Ct  VR
Terminal capacitance Ct (pF)
Reverse current IR (µA)
120
30
1 000
2
80
Ambient temperature Ta (°C)
10 000
0.1
−40
40
300
300