PANASONIC MA3D798

Schottky Barrier Diodes (SBD)
MA3D798
Silicon epitaxial planar type (cathode common)
Unit : mm
For switching power supply
4.6 ± 0.2
9.9 ± 0.3
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF(AV)
20
A
Non-repetitive peak forward
surge current*
IFSM
120
A
Junction temperature
Tj
−40 to +125
°C
Storage temperature
Tstg
−40 to +125
°C
3.0 ± 0.5
15.0 ± 0.5
• TO-220D package
• Allowing to rectify under (IF(AV) = 20 A) condition
• Cathode common dual type
• Low VF (forward voltage) type: VF < 0.47 V (at IF = 10 A)
φ 3.2 ± 0.1
1.4 ± 0.2
13.7 ± 0.2
4.2 ± 0.2
■ Features
2.9 ± 0.2
2.6 ± 0.1
1.6 ± 0.2
0.8 ± 0.1
1
2
0.55 ± 0.15
2.54 ± 0.3
3 5.08 ± 0.5
1 : Anode
2 : Cathode (common)
3 : Anode
TO-220D package
Note) * : Half sine-wave; 10 ms/cycle
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 30 V
5
mA
Forward voltage (DC)
VF
IF = 10 A
0.47
V
3
°C/W
High voltage rectification
Rth(j-c)
Direct current (between junction and case)
Note) Rated input/output frequency: 150 MHz
1
MA3D798
Schottky Barrier Diodes (SBD)
IF  V F
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
VF  Ta
Forward voltage VF (V)
0.7
0.6
0.5
IF = 10 A
0.3
5A
0.2
1A
0.1
0
−40
0
40
80
120
160
Ambient temperature Ta (°C)
10
75°C
1
10−1
10−2
25°C
0
10
20
30
40
50
Reverse voltage VR (V)
0.8
0.4
10
Reverse current IR (mA)
Reverse current IR (mA)
Forward current IF (A)
10−1
0.2
Ta = 125°C
102
1
0
VR = 30 V
20 V
10 V
Ta = 125°C 75°C 25°C
– 20°C
10−2
2
102
103
10
10–3
IR  Ta
IR  V R
102
200
60
1
10−1
10−2
10−3
−40
0
40
80
120
160
Ambient temperature Ta (°C)
200