PESD9X5.0L; PESD9X7.0L Unidirectional ESD protection diodes Rev. 1 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description Single unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882 leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 1.2 Features and benefits ESD protection of one line Max. peak pulse power: PPP = 150 W Low clamping voltage: VCL = 10 V Ultra low leakage current: IRM = 3 nA AEC-Q101 qualified ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPP = 10 A Ultra small SMD plastic package 1.3 Applications Computers and peripherals Audio and video equipment Cellular handsets and accessories Portable electronics Communication systems 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage Cd Min Typ Max Unit PESD9X5.0L - - 5.0 V PESD9X7.0L - - 7.0 V PESD9X5.0L - 68 100 pF PESD9X7.0L - 62 100 pF diode capacitance Conditions f = 1 MHz; VR = 0 V PESD9X5.0L; PESD9X7.0L NXP Semiconductors Unidirectional ESD protection diodes 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] 1 2 1 2 006aaa152 Transparent top view [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number PESD9X5.0L Package Name Description Version - leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm SOD882 PESD9X7.0L 4. Marking Table 4. Marking codes Type number Marking code PESD9X5.0L AS PESD9X7.0L AT 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). PESD9XXL_SER Product data sheet Symbol Parameter Conditions Min Max Unit PPP peak pulse power tp = 8/20 μs [1][2] - 150 W IPP peak pulse current tp = 8/20 μs [1][2] - 10 A Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to pin 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 December 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 PESD9X5.0L; PESD9X7.0L NXP Semiconductors Unidirectional ESD protection diodes Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions electrostatic discharge voltage VESD Min Max Unit - 30 kV machine model - 400 V MIL-STD-883 (human body model) - 10 kV IEC 61000-4-2 (contact discharge) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to pin 2. Table 7. [1][2] ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 μs pulse waveform according to IEC 61000-4-5 PESD9XXL_SER Product data sheet Fig 2. ESD pulse waveform according to IEC 61000-4-2 All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 December 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 PESD9X5.0L; PESD9X7.0L NXP Semiconductors Unidirectional ESD protection diodes 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM IRM Conditions Min Typ Max Unit PESD9X5.0L - - 5.0 V PESD9X7.0L - - 7.0 V VRWM = 5.0 V - 3 100 nA VRWM = 7.0 V - 35 500 nA PESD9X5.0L 6.2 - - V PESD9X7.0L 7.5 - - V - 68 100 pF - 62 100 pF IPP = 10 A - - 18 V IPP = 1 A - - 10 V IPP = 10 A - - 18 V - - 11 V - 0.4 - Ω reverse standoff voltage reverse leakage current PESD9X5.0L PESD9X7.0L VBR Cd breakdown voltage diode capacitance IR = 1 mA f = 1 MHz; VR = 0 V PESD9X5.0L PESD9X7.0L VCL [1][2] clamping voltage PESD9X5.0L PESD9X7.0L IPP = 1 A rdyn PESD9XXL_SER Product data sheet dynamic resistance IR = 10 A [2][3] [1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to pin 2. [3] Non-repetitive current pulse; Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI/ESD STM5.1-2008. All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 December 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 PESD9X5.0L; PESD9X7.0L NXP Semiconductors Unidirectional ESD protection diodes 001aaa633 1.2 PPP 006aac494 10 IRM PPP(25°C) IRM(25°C) (1) 0.8 (2) 1 0.4 0 0 50 100 150 200 Tj (°C) 10−1 −100 −50 0 50 100 150 Tj (°C) (1) PESD9X5.0L; VRWM = 5.0 V (2) PESD9X7.0L; VRWM = 7.0 V Fig 3. Relative variation of peak pulse power as a function of junction temperature; typical values Fig 4. Relative variation of reverse leakage current as a function of junction temperature; typical values I 006aac495 80 Cd (pF) 60 −VCL −VBR −VRWM V −IRM −IR 40 (1) − (2) 20 + P-N −IPP 0 0 2 4 6 8 VR (V) 006aaa407 f = 1 MHz; Tamb = 25 °C (1) PESD9X5.0L (2) PESD9X7.0L Fig 5. Diode capacitance as a function of reverse voltage; typical values PESD9XXL_SER Product data sheet Fig 6. V-I characteristics for a unidirectional ESD protection diode All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 December 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 PESD9X5.0L; PESD9X7.0L NXP Semiconductors Unidirectional ESD protection diodes ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ DUT (DEVICE UNDER TEST) IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω vertical scale = 2 kV/div horizontal scale = 15 ns/div vertical scale = 20 V/div horizontal scale = 10 ns/div GND GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2 vertical scale = 2 kV/div horizontal scale = 15 ns/div vertical scale = 20 V/div horizontal scale = 10 ns/div GND GND unclamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 7. clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2 006aac496 PESD9X5.0L: ESD clamping test setup and waveforms PESD9XXL_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 December 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 PESD9X5.0L; PESD9X7.0L NXP Semiconductors Unidirectional ESD protection diodes ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ DUT (DEVICE UNDER TEST) IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω vertical scale = 2 kV/div horizontal scale = 15 ns/div vertical scale = 20 V/div horizontal scale = 10 ns/div GND GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2 vertical scale = 2 kV/div horizontal scale = 15 ns/div vertical scale = 20 V/div horizontal scale = 10 ns/div GND GND unclamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 8. clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2 006aac497 PESD9X7.0L: ESD clamping test setup and waveforms PESD9XXL_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 December 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 PESD9X5.0L; PESD9X7.0L NXP Semiconductors Unidirectional ESD protection diodes 7. Application information The PESD9X5.0L and the PESD9X7.0L are designed for the protection of one unidirectional data or signal line from the damage caused by ESD and surge pulses. Both devices may be used on lines where the signal polarities are either positive or negative with respect to ground. The devices provide a surge capability of 150 W per line for an 8/20 μs waveform. line to be protected (positive signal polarity) line to be protected (negative signal polarity) PESD9X5.0/7.0L PESD9X5.0/7.0L GND GND unidirectional protection of one line 006aac498 Fig 9. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PESD9XXL_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 December 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 PESD9X5.0L; PESD9X7.0L NXP Semiconductors Unidirectional ESD protection diodes 9. Package outline 0.50 0.46 0.62 0.55 2 0.30 0.22 0.65 0.30 0.22 1.02 0.95 1 0.55 0.47 cathode marking on top side Dimensions in mm 03-04-17 Fig 10. Package outline SOD882 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 10000 PESD9X5.0L SOD882 2 mm pitch, 8 mm tape and reel -315 PESD9X7.0L [1] PESD9XXL_SER Product data sheet For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 December 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 PESD9X5.0L; PESD9X7.0L NXP Semiconductors Unidirectional ESD protection diodes 11. Soldering 1.3 0.7 R0.05 (8×) solder lands 0.6 0.7 0.8 (2×) (2×) (2×) 0.9 solder resist solder paste occupied area 0.3 (2×) Dimensions in mm 0.4 (2×) 0.5 (2×) sod882_fr Reflow soldering is the only recommended soldering method. Fig 11. Reflow soldering footprint SOD882 PESD9XXL_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 December 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 NXP Semiconductors PESD9X5.0L; PESD9X7.0L Unidirectional ESD protection diodes 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD9XXL_SER v.1 20101216 Product data sheet - - PESD9XXL_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 December 2010 © NXP B.V. 2010. All rights reserved. 11 of 14 PESD9X5.0L; PESD9X7.0L NXP Semiconductors Unidirectional ESD protection diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). 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Export might require a prior authorization from national authorities. PESD9XXL_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 December 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 PESD9X5.0L; PESD9X7.0L NXP Semiconductors Unidirectional ESD protection diodes Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESD9XXL_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 December 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 NXP Semiconductors PESD9X5.0L; PESD9X7.0L Unidirectional ESD protection diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 December 2010 Document identifier: PESD9XXL_SER