SUD50P04-08 www.vishay.com Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -40 RDS(on) () ID (A) 0.0081 at VGS = -10 V -50 d 0.0117 at VGS = -4.5 V -48 d Qg (TYP.) 60 • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-252 TO APPLICATIONS Drain connected to tab S • Power switch • Load switch in high current applications G • DC/DC converters S D G D Top View P-Channel MOSFET Ordering Information: SUD50P04-08-GE3 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current IDM Avalanche Current Single Avalanche Energy a Maximum Power Dissipation a Operating Junction and Storage Temperature Range ID L = 0.1 mH TC = 25 °C TA = 25 °C c V -50 d -50 d -100 IAS -46 EAS 106 PD UNIT 73.5 b 2.5 A mJ W TJ, Tstg -55 to +150 °C UNIT THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT Junction-to-Ambient (PCB Mount) c RthJA 50 Junction-to-Case (Drain) RthJC 1.7 °C/W Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. S14-2535-Rev. B, 29-Dec-14 Document Number: 65594 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P04-08 www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static VDS VGS = 0 V, ID = -250 μA -40 - - VGS(th) VDS = VGS, ID = -250 μA -1 - -2.5 IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = -40 V, VGS = 0 V - - -1 VDS = -40 V, VGS = 0 V, TJ = 125 °C - - -50 VDS = -40 V, VGS = 0 V, TJ = 150 °C - - -250 VDS -10 V, VGS = -10 V -50 - - A VGS = -10 V, ID = -22 A - 0.0067 0.0081 VGS = -4.5 V, ID = -19 A - 0.0097 0.0117 VDS = -15 V, ID = -22 A - 45 - - 5380 - - 570 - - 500 - - 106 159 - 60 90 VDS = -20 V, VGS = -4.5 V, ID = -20 A - 22 - - 27 - f = 1 MHz 0.4 1.8 3.6 - 15 23 - 12 18 - 70 105 - 18 27 IS - - -50 Pulsed Current ISM - - -100 Forward Voltage a VSD - -0.8 -1.5 V - 35 53 ns Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a IDSS ID(on) RDS(on) gfs V nA μA S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg c td(on) c tr Turn-Off Delay Time c td(off) Turn-On Delay Time Rise Time Fall Time c VGS = 0 V, VDS = -20 V, f = 1 MHz VDS = -20 V, VGS = -10 V, ID = -20 A VDD = -20 V, RL = 2 ID -10 A, VGEN = -10 V, Rg = 1 tf pF nC ns Drain-Source Body Diode Ratings and Characteristics (TC = 25 °C) b Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = -10 A, VGS = 0 V trr IRM(REC) Qrr IF = -10 A, dI/dt = 100 A/μs A - -2 -3 A - 33 50 nC Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-2535-Rev. B, 29-Dec-14 Document Number: 65594 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P04-08 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.015 VGS = 10 V thru 5 V I D - Drain Current (A) R DS(on) - On-Resistance (Ω) VGS = 4 V 80 60 40 20 0.012 VGS = 4.5 V 0.009 VGS = 10 V 0.006 VGS = 3 V 0 0.003 0.5 1.0 1.5 2.0 0 2.5 20 40 60 80 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 10 0.030 8 0.024 R DS(on) - On-Resistance (Ω) I D - Drain Current (A) 0.0 6 4 TC = 25 °C 100 0.018 TJ = 150 °C 0.012 TJ = 25 °C 0.006 2 TC = 125 °C TC = - 55 °C 0 0 1 2 3 VGS - Gate-to-Source Voltage (V) 0.000 2 4 Transfer Characteristics 10 On-Resistance vs. Gate-to-Source Voltage 10 100 ID = 20 A VGS - Gate-to-Source Voltage (V) TC = - 55 °C g fs - Transconductance (S) 4 6 8 VGS - Gate-to-Source Voltage (V) 75 TC = 25 °C TC = 125 °C 50 25 8 VDS = 20 V 6 VDS = 10 V VDS = 32 V 4 2 0 0 0 10 20 30 40 50 0 30 60 90 ID - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge S14-2535-Rev. B, 29-Dec-14 120 Document Number: 65594 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P04-08 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 - 1.0 10 ID = 250 µA VGS(th) (V) I S - Source Current (A) - 1.3 TJ = 150 °C TJ = 25 °C - 1.6 - 1.9 1 - 2.2 0.1 0.0 0.3 0.6 0.9 1.2 - 2.5 - 50 - 25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 100 125 150 Threshold Voltage 8000 VDS - Drain-to-Source Voltage (V) - 43 6000 C - Capacitance (pF) 25 TJ - Temperature (°C) VSD - Source-to-Drain Voltage (V) Ciss 4000 2000 Coss ID = 250 µA - 45 - 47 - 49 Crss 0 0 10 20 30 - 51 - 50 40 - 25 VDS - Drain-to-Source Voltage (V) Capacitance 25 50 75 Drain Source Breakdown vs. Junction Temperature 2.0 80 ID = 20 A 1.7 VGS = 10 V I D - Drain Current (A) R DS(on) - On-Resistance (Normalized) 0 TJ - Junction Temperature (°C) 1.4 VGS = 4.5 V 1.1 60 Package Limited 40 20 0.8 0.5 - 50 0 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature S14-2535-Rev. B, 29-Dec-14 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating Document Number: 65594 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P04-08 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 100 Limited by RDS(on)* 100 TJ = 150 °C I D - Drain Current (A) I DAV (A) 100 µA TJ = 25 °C 10 10 1 ms 10 ms, 100 ms 1 s, 10 s, DC 1 TC = 25 °C Single Pulse 0.1 1 10-5 10-4 10-3 10-2 0.01 0.1 10-1 Time (s) BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Single Pulse Avalanche Current Capability vs. Time Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65594. S14-2535-Rev. B, 29-Dec-14 Document Number: 65594 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000