New Product SUD50P04-40P Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V -8 VDS (V) - 40 Qg (Typ.) • TrenchFET® Power MOSFET • 100 % UIS Tested RoHS 17 nC COMPLIANT APPLICATIONS • Backlight Inverter for LCD Display • Full Bridge DC/DC Converter S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information: SUD50P04-40P-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Limit - 40 ± 20 - 8a - 8a V - 6b - 4.8b - 30 - 8a A - 2.0b 15 11.25 24 15.3 mJ W 2.4b 1.5b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit °C THERMAL RESISTANCE RATINGS Parameter Maximum Steady State Symbol RthJA Typical Maximum Junction-to-Ambientb 43 52 Maximum Junction-to-Case Steady State RthJC 4.3 5.2 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Document Number: 69731 S-80109-Rev. B, 21-Jan-08 www.vishay.com 1 New Product SUD50P04-40P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea mV/°C 4.3 - 1.4 - 2.7 V ± 100 nA VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 70 °C - 20 VDS ≥ - 5 V, VGS = - 10 V rDS(on) Forward Transconductancea V - 41 gfs - 10 µA A VGS = - 10 V, ID = - 5 A 0.030 0.040 VGS = - 4.5 V, ID = - 4 A 0.036 0.050 VDS = - 15 V, ID = - 5 A 20 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1555 VDS = - 20 V, VGS = 0 V, f = 1 MHz tr pF 142 VDS = - 20 V, VGS = - 10 V, ID = - 5 A VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A 38.5 60 17 27 4.2 nC 7.0 f = 1 MHz td(on) td(off) 176 VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 3 47 80 60 110 35 60 tf 13 25 td(on) 10 20 VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω tr td(off) tf 14 25 36 60 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb -8 - 30 IS = - 2 A IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C A - 0.76 - 1.2 V 22 40 ns 22 40 nC 15 7 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69731 S-80109-Rev. B, 21-Jan-08 New Product SUD50P04-40P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 5 VGS = 10 thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 3V 3 TJ = 25 °C 2 6 1 TJ = 125 °C 0 0.0 0.5 1.0 1.5 2.0 TJ = - 55 °C 0 0.0 2.5 0.8 VDS - Drain-to-Source Voltage (V) 3.2 4.0 Transfer Characteristics 0.050 2500 0.044 2000 Ciss C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 2.4 VGS - Gate-to-Source Voltage (V) Output Characteristics VGS = 4.5 V 0.038 1.6 0.032 VGS = 10 V 1500 1000 Coss 0.026 500 0.020 0 Crss 0 6 12 18 24 0 30 6 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 10 1.8 ID = 5 A ID = 5 A VDS = 10 V VGS = 10 V 1.6 8 VDS = 20 V 6 VDS = 30 V 4 2 1.4 (Normalized) r DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 VGS = 4.5 V 1.2 1.0 0.8 0 0 8 16 24 Qg - Total Gate Charge (nC) Gate Charge Document Number: 69731 S-80109-Rev. B, 21-Jan-08 32 40 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SUD50P04-40P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 100 TJ = 150 °C r DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5 A TJ = 25 °C 10 0.09 0.06 TA = 125 °C 0.03 TA = 25 °C 0 1 0.0 0.3 0.6 0.9 1.2 0 1.5 2 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 120 0.5 96 ID = 250 µA Power (W) V GS(th) Variance (V) 4 0.3 ID = 5 mA 0.1 - 0.1 - 0.3 - 50 72 48 24 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 120 Limited by rDS(on)* 96 I D - Drain Current (A) Power (W) 10 72 48 1 ms 10 ms 100 ms 1 1s 10 s 0.1 24 DC TA = 25 °C Single Pulse 0 0. 00 1 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Case 10 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69731 S-80109-Rev. B, 21-Jan-08 New Product SUD50P04-40P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 7 Limited by rDS(on)* 1 ms 10 ms 100 ms DC 1 I D - Drain Current (A) I D - Drain Current (A) 6 100 µs 10 0.1 4 3 1 TC = 25 °C Single Pulse 0 0.01 0.01 0.1 1 0 100 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified 50 75 100 125 150 TA - Ambient Temperature (°C) Current Derating*, Junction-to-Ambient Safe Operating Area, Junction-to-Case 22 3.5 18 2.8 13 2.1 Power (W) I D - Drain Current (A) 25 Package Limited 9 1.4 0.7 4 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 TA - Ambient Temperature (°C) TC - Case Temperature (°C) Power Derating*, Junction-to-Ambient Current Derating*, Junction-to-Case 35 Power (W) 28 21 14 * The power dissipation PD is based on TJ(max) = 175 °C, using 7 junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls 0 0 25 50 75 100 125 150 175 below the package limit. TC - Case Temperature (°C) Power Derating*, Junction-to-Case Document Number: 69731 S-80109-Rev. B, 21-Jan-08 www.vishay.com 5 New Product SUD50P04-40P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 52 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69731. www.vishay.com 6 Document Number: 69731 S-80109-Rev. B, 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1