SUD50P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S), 175C MOSFET VDS (V) –40 rDS(on) () ID (A) 0.015 @ VGS = –10 V –50 0.023 @ VGS = –4.5 V –45 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50P04-15 D P-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS –40 Gate-Source Voltage VGS 20 TC = 25C Continuous Drain Currentb TC = 100C Pulsed Drain Current –40 A Maximum Power Dissipationb –150 IS TC = 25C TA = 25C Operating Junction and Storage Temperature Range V –50 ID IDM Continuous Source Current (Diode Conduction) Unit –50 100b PD W 3a TJ, Tstg C –55 to 175 Parameter Maximum Junction-to-Ambienta Symbol t 10 sec. Steady State Maximum Junction-to-Case RthJA RthJC Typical Maximum 15 18 40 50 1.2 1.5 Unit C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71176 S-00830—Rev. A, 24-Apr-00 www.vishay.com FaxBack 408-970-5600 1 SUD50P04-15 New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = –250 mA –40 VGS(th) VDS = VGS, ID = –250 mA –1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = –40 V, VGS = 0 V –1 VDS = –40 V, VGS = 0 V, TJ = 125C –50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = –5 V, VGS = –10 V V –120 VGS = –10 V, ID = –30 A a Drain-Source On-State Resistance D i S O S R i rDS(on) Forward Transconductancea gfs VGS = –10 V, ID = –30 A, TJ = 125C VDS = –15 V, ID = –30 A mA A 0.012 0.015 0.024 VGS = –4.5 V, ID = –20 A nA 0.018 W 0.023 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 5400 VGS = 0 V, VDS = –25 V, f = 1 MHz pF F 640 300 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 15 25 tr 380 580 75 115 140 210 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 85 VDS = –20 V, VGS = –10 V, ID = –50 20 V 10 V 50 A 130 nC C 25 15 VDD = –20 20 V V,, RL = 0 0.4 4W ID ^ –50 50 A, A VGEN = –10 10 V V, RG = 2 2.5 5W tf ns Source-Drain Diode Ratings and Characteristic (TC = 25C) Pulsed Current ISM –150 A Diode Forward Voltagea VSD IF = –50 A, VGS = 0 V –1.2 –1.5 V trr IF = –50 A, di/dt = 100 A/ms 40 80 ns Source-Drain Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2 Document Number: 71176 S-00830—Rev. A, 24-Apr-00 SUD50P04-15 New Product Vishay Siliconix Output Characteristics Transfer Characteristics 250 100 7V VGS = 10, 9, 8 V TC = –55C 6V 200 80 I D – Drain Current (A) I D – Drain Current (A) 25C 150 5V 100 4V 50 125C 60 40 20 2, 3 V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 80 0.04 TC = –55C r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) 25C 60 125C 40 20 0 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0 0 20 40 60 80 100 0 20 40 ID – Drain Current (A) 80 100 120 ID – Drain Current (A) Capacitance Gate Charge 8000 V GS – Gate-to-Source Voltage (V) 20 Ciss 6000 C – Capacitance (pF) 60 4000 2000 Coss Crss 0 VDS = 20 V ID = 50 A 16 12 8 4 0 0 5 10 15 20 25 VDS – Drain-to-Source Voltage (V) Document Number: 71176 S-00830—Rev. A, 24-Apr-00 30 0 40 80 120 160 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 3 SUD50P04-15 New Product Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 150C TJ = 25C 10 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Safe Operating Area 60 500 50 100 I D – Drain Current (A) I D – Drain Current (A) Maximum Drain Current vs. Case Temperature 40 30 20 10 ms 100 ms Limited by rDS(on) 1 ms 10 10 ms 100 ms dc 1 TC = 25C Single Pulse 10 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 40C/W 0.05 Single Pulse 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.01 10–4 10–3 www.vishay.com FaxBack 408-970-5600 4 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 30 Document Number: 71176 S-00830—Rev. A, 24-Apr-00