New Product SUD50P04-13L Vishay Siliconix P-Channel 40-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 rDS(on) (Ω) ID (A) 0.013 at VGS = - 10 V - 60a 0.022 at VGS = - 4.5 V - 48 • TrenchFET® Power MOSFET • 175 °C Junction Temperature RoHS COMPLIANT S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information: SUD50P04-13L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Currentb TC = 25 °C TC = 100 °C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current L = 0.1 mH Avalanche Energy, Maximum Power Dissipationb TC = 25 °C TA = 25 °C V - 60c ID - 43 IDM - 100 IS - 60c IAS - 40 EAS 80 mJ 93.7b PD W 3a TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t ≤ 10 sec Steady State RthJA RthJC Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. b. Calculated based on maximum allowed Junction Temperature. Package limitation current is 50 A. Document Number: 73009 S-71660-Rev. B, 06-Aug-07 Typical Maximum Unit 15 40 1.3 18 50 1.8 °C/W www.vishay.com 1 New Product SUD50P04-13L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage V(BR)DSS VGS = 0 V, ID = - 250 µA - 40 VGS(th) VDS = VGS, ID = - 250 µA - 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 125 °C - 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 50 VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea rDS(on) gfs VGS = - 10 V, ID = - 30 A, TJ = 125 °C VDS = - 15 V, ID = - 30 A V nA µA A 0.0105 0.013 0.020 VGS = - 4.5 V, ID = - 20 A Forward Transconductancea - 3.0 0.017 Ω 0.022 15 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Rg Gate Resistance Total Gate Charge c Gate-Source Chargec c 3120 VDS = - 25 V, VGS = 0 V, f = 1 MHz 320 f = 1 MHz Qg Qgs pF 440 63 VDS = - 20 V, VGS = - 10 V, ID = - 50 A Ω 4.3 95 nC 13 Gate-Drain Charge Qgd 16 Turn-On Delay Timec td(on) 15 25 18 30 60 90 47 70 Rise Timec tr Turn-Off Delay Timec Fall Timec td(off) VDD = - 20 V, RL = 0.4 Ω ID ≅ - 50 A, VGEN = - 10 V, Rg = 2.5 Ω tf ns Drain-Source Body Diode Characteristics Pulse Current Forward Voltage ISM a Source-Drain Reverse Recovery Time - 100 VSD IF = - 50 A, VGS = 0 V - 1.0 - 1.5 V trr IF = - 50 A, di/dT = 100 A/µs 36 55 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73009 S-71660-Rev. B, 06-Aug-07 New Product SUD50P04-13L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 100 100 VGS = 10 thru 5 V 80 I D - Drain Current (A) ID - Drain Current (A) 80 60 4V 40 20 60 40 TC = 125 °C 20 2V 25 °C 3V - 55 °C 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 80 0.05 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 70 60 50 25 °C 40 125 °C 30 20 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 10 0 0.00 0 10 20 30 40 50 0 20 40 VGS - Gate-to-Source Voltage (V) 60 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 5000 10 V GS - Gate-to-Source Voltage (V) 4500 C - Capacitance (pF) 4000 Ciss 3500 3000 2500 2000 1500 1000 Coss 500 VDS = 20 V ID = 50 A 8 6 4 2 Crss 0 0 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 73009 S-71660-Rev. B, 06-Aug-07 40 0 8 16 24 32 40 48 56 64 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 New Product SUD50P04-13L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 1.8 100 VGS = 10 V ID = 30 A TJ = 150 °C I S - Source Current (A) rDS(on) − On-Resistance (Normalized) 1.6 1.4 1.2 1.0 TJ = 25 °C 10 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 150 0 175 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 200 75 Limited by rDS(on) 100 10 µs 100 µs I D - Drain Current (A) I D - Drain Current (A) 60 45 Limited By Package 30 10 1 ms 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 15 0 0.1 0 25 50 75 100 125 150 175 0.1 TC - Case Temperature (°C) 1 10 100 VDS - Drain-to-Source Voltage (V) Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 1K Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73009 S-71660-Rev. B, 06-Aug-07 SUD50P04-13L Vishay Siliconix THERMAL RATINGS 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 1 00 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73009 Document Number: 73009 S-71660-Rev. B, 06-Aug-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1