MIC4609 Data Sheet

MIC4609
600V 3-Phase MOSFET/IGBT Driver
Features
General Description
• Gate Drive Supply Voltage up to 20V
• Overcurrent Protection with Programmable
Restart Delay
• 1A Gate Drivers
• Dual (HI/LI) Inputs per Phase
• Fault Signal Asserts on Overcurrent and
VDD UVLO
• TTL Input Thresholds
• 300 ns Typical Input Filtering Time
• Shoot-Through Protection
• Low-Power Consumption
• Supply Undervoltage Protection
• -40°C to +125°C Junction Temperature Range
The MIC4609 is a 600V 3-phase MOSFET/IGBT driver.
The MIC4609 features a 300 ns typical input filtering
time to prevent unwanted pulses and a 550 ns of
propagation delay. The MIC4609 has TTL input
thresholds.
Typical Applications
•
•
•
•
3-Phase Motor Drive
Field-Oriented Control (FOC)
White Goods Appliances
Brushless DC Fans
 2016 Microchip Technology Inc.
The robust operation of the MIC4609 ensures that the
outputs are not affected by supply glitches, High Side
(HS) ringing below ground, or HS slewing with
high-speed
voltage
transitions.
Undervoltage
protection is provided on both the low-side and
high-side drivers.
The MIC4609 is available in a 28-pin wide SOIC
package. The MIC4609 has an operating junction
temperature range of -40°C to +125°C.
Package Type
MIC4609
28-Pin SOICW
AHB
AHO
VDD
AHI
BHI
1
28
2
27
3
26
AHS
CHI
ALI
4
25
NC
5
24
BLI
CLI
FAULT
ISNS
EN
6
23
7
22
8
21
BHB
BHO
BHS
NC
9
20
10
19
RCIN
VSS
11
18
12
17
COM
13
16
NC
ALO
CLO
14
15
BLO
CHB
CHO
CHS
DS20005531A-page 1
MIC4609
Functional Block Diagram MIC4609 – Top Level Circuit
VDD
UVLO
VDD
VDD
AHB
UVLO
AHO
UVLO
EN
AHI
Phase A Drive Circuit
AHS
AHI
Input Filter &
Anti-Shoot-Through
VSS
ALO
ALI
COM
ALI
VSS
BHB
VDD
BHO
UVLO
EN
BHI
Phase B Drive Circuit
BHS
BHI
Input Filter &
Anti-Shoot-Through
VSS
BLO
BLI
COM
BLI
VSS
CHB
VDD
CHO
UVLO
EN
CHI
Phase C Drive Circuit
CHS
CHI
Input Filter &
Anti-Shoot-Through
VSS
CLO
CLI
COM
CLI
COM
VSS
COM
UVLO
S
+
ISNS
Input
Blanking
-
Q
Latch
R
FAULT
_
Q
VISNS
VSS
IRCIN
RCIN
+
VRCIN+
EN
Input
Filter
EN
VSS
VSS
VSS
DS20005531A-page 2
 2016 Microchip Technology Inc.
MIC4609
Functional Block Diagram MIC4609 – Phase x Drive Circuit
xHB
VDD
UVLO
DRIVER
UVLO
EN
xHO
LEVEL
SHIFT
xHS
xHI
xLI
S
Q
R
Q
DRIVER
xLO
COM
Note:
The x in the suffix of a pin name designates any of the three phases, e.g., xHS refers to either AHS,
BHS or CHS.
 2016 Microchip Technology Inc.
DS20005531A-page 3
MIC4609
DS20005531A-page 4
Typical Application Circuit MIC4609 – 300V, 3-Phase Motor Driver
VDD
VCC
R3
D3
R2
D2
R1
D1
V DD
300V
SUPPLY
Q4
Q2
AHB
Q6
AHO
FAULT
AHS
C1
EN
BHB
BHO
AHI
C2
BHS
ALI
Controller
MIC4609
CHB
CHO
BHI
CHS
C3
BLI
ALO
BLO
CHI
Q3
Q1
CLO
CLI
ISNS
RCIN
 2016 Microchip Technology Inc.
V SS
COM
CDLY
RS
Q5
MIC4609
1.0
Operating Ratings (1)
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage (VDD, VXHB - VXHS) .................. -0.3V to +25V
Input Voltages (VXLI, VXHI, VEN) .......................... -0.3V to VDD
Voltage on LO (VXLO) .......................................... -0.3V to VDD
Voltage on HO (VXHO) .................................VHS - 0.3V to VHB
Voltage on HS .................................................... -5V to +630V
Voltage on HB ...............................................................+655V
Storage Temperature ...................................-60°C to +150°C
ESD Rating
HBM .......................................................................... 2kV
CDM ...................................................................... 1.5 kV
Supply Voltage (VDD) ....................................... +10V to +20V
Voltage on xHS (continuous) ............................. -1V to +600V
Voltage on xHS (repetitive transient) ................. -5V to +600V
HS Slew Rate .............................................................. 50V/ns
Voltage on xHB .............................VXHS + 10V to VXHS + 20V
and/or ........................................VDD - 1V to VDD + 600V
Junction Temperature (TJ) ........................... -40°C to +125°C
Junction Thermal Resistance (JA).............. -40°C to +125°C
SOIC Wide 28LD ................................................ 53°C/W
Note 1: The device is not guaranteed to function
outside its operating rating.
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
AC/DC ELECTRICAL CHARACTERISTICS (Note 1, 2)
Electrical Specifications: Unless otherwise indicated, VDD = VxHB = 20V, VEN = 5V, VSS = VxHS = 0V; No load on
xLO or xHO, TA = +25°C. Bold values indicate -40°C TJ +125°C.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
VDD Quiescent Current
IDD
—
150
250
µA
xLI = xHI = 0V
VDD Shutdown Current
IDDSH
—
0.1
10
µA
EN = 0V with HS = floating
or ground
VDD Operating Current
IDDO
—
240
350
µA
f = 20 kHz
Total xHB Quiescent Current
IxHB
—
81
180
µA
xLI = xHI = 0V or
xLI = 0V and xHI = 5V
Total xHB Operating Current
IxHBO
—
600
1500
µA
f = 20 kHz
High-Side Leakage Current
ILxHB
—
1
10
µA
VxHB = VxHS = 600V
Low-Level Input Voltage
VIL
—
—
0.8
V
High-Level Input Voltage
VIH
2.2
—
—
V
VHYS
—
0.2
—
V
RI
100
370
500
k
Supply Current
Input (TTL: xLI, xHI, EN)
Input Voltage Hysteresis
Input Pull-Down Resistance
For xLI and xHI only (Note 3)
Undervoltage Protection
VDD Falling Threshold
VDDR
7
8
9
V
VDD Threshold Hysteresis
VDDH
—
0.5
—
V
xHB Falling Threshold
VxHBR
7
8
9
V
xHB Threshold Hysteresis
VxHBH
—
0.5
—
V
Note 1:
2:
3:
Specification for packaged product only.
The x in the suffix of a pin name designates any of the three phases, e.g., xHS refers to either AHS, BHS
or CHS.
Enable resistance is typical only and is not production tested.
 2016 Microchip Technology Inc.
DS20005531A-page 5
MIC4609
AC/DC ELECTRICAL CHARACTERISTICS (CONTINUED) (Note 1, 2)
Electrical Specifications: Unless otherwise indicated, VDD = VxHB = 20V, VEN = 5V, VSS = VxHS = 0V; No load on
xLO or xHO, TA = +25°C. Bold values indicate -40°C TJ +125°C.
Parameter
Sym.
Min.
Typ.
Max.
Unit
VISNS+
420
520
650
mV
Conditions
Overcurrent Protection
Rising Overcurrent Threshold
ISNS Pin Blanking Time
ISNS-to-Gate Propagation Delay
tISNS_BLK
270
370
470
ns
tISNS_PROP
400
650
900
ns
Fault Circuit
Fault Pin Output Low Voltage
VOLF
—
—
0.8
V
VRCIN+
—
5
—
V
VRCIN_HYS
—
0.6
—
V
RCIN Pin Current Source
IRCIN
3
5
7
µA
VRCIN = 0V
Fault Clear Time
tFCL
0.5
1
2
ms
CRCIN = 1nF
VxOLL
—
0.5
0.9
V
IxLO = 50 mA
High-Level Output Voltage
VxOHL
—
0.6
0.9
V
IxLO = -50 mA
VxOHL = VDD - VxLO
Peak Sink Current
IxOHL
—
1
—
A
VxLO = 0V
Peak Source Current
IxOLL
—
1
—
A
VxLO = 20V
VxOLH
—
0.5
0.9
V
IxHO = 50 mA
High-Level Output Voltage
VxOHH
—
0.6
0.9
V
IxHO = -50 mA
VxOHH = VxHB - VxHO
Peak Sink Current
IxOHH
—
1
—
A
VxHO = 0V
Peak Source Current
IxOLH
—
1
—
A
VxHO = 20V
tON
300
600
700
ns
CL = 1 nF
tOFF
300
550
700
ns
CL = 1 nF
Turn-On Rise Time
tR
—
20
60
ns
CL = 1 nF
Turn-Off Fall Time
tF
—
20
60
ns
CL = 1 nF
Input Filtering Time
tFLTR
200
300
480
ns
xLI, xHI, EN
tD
200
300
450
ns
CL = 1 nF
tDLYM
—
50
—
ns
CL = 1 nF
EN-to-Gate Shutdown Delay
tEN_OFF
450
650
750
ns
CL = 1 nF
Output Pulse Width Matching
tPWN
—
50
—
ns
tPW > 1 µs
CL = 1 nF
Rising VCIN Pin Threshold
VCIN Hysteresis
VISNS = 1V, IFAULT = 1 mA
LO Gate Driver
Low-Level Output Voltage
HO Gate Driver
Low-Level Output Voltage
Switching Specifications
Turn-On Propagation Delay
Turn-Off Propagation Delay
Dead Time
Delay Matching
Note 1:
2:
3:
Specification for packaged product only.
The x in the suffix of a pin name designates any of the three phases, e.g., xHS refers to either AHS, BHS
or CHS.
Enable resistance is typical only and is not production tested.
DS20005531A-page 6
 2016 Microchip Technology Inc.
MIC4609
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all parameters apply with 10V VDD 20V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Specified Temperature Range (Note 1)
TA
-40
—
+125
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TS
-60
—
+150
°C
JA
—
53
—
°C/W
Conditions
Temperature Ranges
Thermal Package Resistances
Thermal Resistance, 28LD SOICW
Note 1:
Operation in this range must not cause TJ to exceed Maximum Junction Temperature (+125°C).
 2016 Microchip Technology Inc.
DS20005531A-page 7
MIC4609
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 10V  VDD  20V.
50
VHS = GND
EN = VDD
120
VHB Quiescent Current (μA)
VDD Quiescent Current (μA)
140
125°C
100
80
60
25°C
-40°C
40
20
10
11
12
13
FIGURE 2-1:
VDD Voltage.
14 15 16
VDD (V)
17
18
19
VDD Quiescent Current vs.
VHB = 14V
20
10
VHB = 10V
-25
0
FIGURE 2-4:
Temperature.
25
50
Temperature (°C)
75
100
125
VHB Quiescent Current vs.
VDD+HB Shutdown Current (μA)
10
VDD = 20V
120
100
80
60
VDD = 15V
40
VDD = 10V
20
VHS = GND
EN = VDD
0
-50
-25
0
FIGURE 2-2:
Temperature.
25
50
Temperature (°C)
75
100
VDD Quiescent Current vs.
0.1
HI = LI = 0V
VHS = Floating
EN = 0V
VDD = VHB
125°C
-40°C
0.01
25°C
0.001
10
11
12
13
14 15 16
VDD+HB (V)
17
18
19
20
VDD+HB Shutdown Current
FIGURE 2-5:
vs. Voltage.
10
VHS = GND
EN = VDD
40
125°C
30
20
25°C
10
-40°C
0
10
1
125
VDD+HB Shutdown Current (μA)
VDD Quiescent Current (μA)
VHB = 20V
30
-50
20
140
VHB Quiescent Current (μA)
40
0
0
50
VHS = GND
EN = VDD
12
14
16
18
20
1
0.1
VDD = 15V
0.01
0.001
VDD = 10V
0.0001
-50
-25
VHB (V)
FIGURE 2-3:
VHB Voltage.
DS20005531A-page 8
VHB Quiescent Current vs.
VDD = 20V
FIGURE 2-6:
vs. Temperature.
0
25
50
75
Temperature (°C)
HI = LI = 0V
VHS = Floating
EN = 0V
VDD = VHB
100
125
VDD+HB Shutdown Current
 2016 Microchip Technology Inc.
MIC4609
Note: Unless otherwise indicated, TA = +25°C with 10V  VDD  20V.
200
HI = LI = 0V
VHS= GND
EN = 0V
VDD= VHB
100
VHB Operating Current (μA)
VDD+HB Shutdown Current (μA)
120
25ºC
125ºC
80
60
40
-40ºC
20
160
-40ºC
140
120
25ºC
100
80
60
40
125ºC
20
0
0
10
11
12
13
14
15
16
17
18
19
20
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (kHz)
VDD+HB (V)
FIGURE 2-7:
vs. Voltage.
VDD+HB Shutdown Current
FIGURE 2-10:
VHB Operating Current vs.
Frequency – One Phase.
25
120
VDD = 20V
VDD = 15V
100
RON Sink (Ω)
VDD+HB Shutdown Current (μA)
VHB = VDD
VHS = 0V
CL = 0 nF
180
80
60
40
20
0
-50
-25
0
25
50
75
100
20
125ºC
25ºC
15
10
HI = LI = 0V
VHS = GND
EN = 0V
VDD = VHB
VDD = 10V
IHO = 50 mA
VHS = GND
EN = VHB = VDD
-40ºC
5
125
10
11
12
13
Temperature (°C)
200
180
160
140
120
100
80
60
40
20
0
VDD+HB Shutdown Current
25
VHB = VDD
VHS = 0V
CL = 0 nF
125ºC
25ºC
-40ºC
15 16
VDD (V)
17
18
19
20
FIGURE 2-11:
HO Output Sink
ON-Resistance vs. VDD.
IHO = 50 mA
VHS = GND
EN = VHB = VDD
20
RON Sink (Ω)
VDD Operating Current (μA)
FIGURE 2-8:
vs. Temperature.
14
VDD = 10V
VDD = 15V
15
10
VDD = 20V
5
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (kHz)
FIGURE 2-9:
Frequency.
VDD Operating Current vs.
 2016 Microchip Technology Inc.
-50
-25
0
25
50
Temperature (°C)
75
100
125
FIGURE 2-12:
HO Output Sink
ON-Resistance vs. Temperature.
DS20005531A-page 9
MIC4609
Note: Unless otherwise indicated, TA = +25°C with 10V  VDD  20V.
25
20
ILO = 50 mA
VHS = GND
EN = VHB = VDD
125ºC
RON Source (Ω)
RON Sink (Ω)
20
25ºC
15
10
IHO = -50 mA
VHS = GND
EN = VHB = VDD
VDD = 10V
15
10
VDD = 20V
5
VDD = 15V
-40ºC
0
5
10
11
12
13
14 15 16
VDD (V)
17
18
19
FIGURE 2-13:
LO Output Sink
ON-Resistance vs. VDD.
RON Sink (Ω)
20
-25
0
25
50
Temperature (°C)
75
25
ILO = 50 mA
VHS = GND
EN = VHB = VDD
VDD = 15V
125
ILO = -50 mA
VHS = GND
EN = VHB = VDD
125ºC
VDD = 10V
15
10
100
FIGURE 2-16:
HO Output Source
ON-Resistance vs. Temperature.
RON Source (Ω)
25
-50
20
VDD = 20V
5
20
25ºC
15
10
-40ºC
0
5
-50
-25
0
25
50
Temperature (°C)
75
100
125
20
RON Source (Ω)
RON Source (Ω)
15
25
IHO = -50 mA
VHS = GND
EN = VHB = VDD
125ºC
20
11
12
13
14 15
VDD (V)
16
17
18
19
20
FIGURE 2-17:
LO Output Source
ON-Resistance vs. VDD.
FIGURE 2-14:
LO Output Sink
ON-Resistance vs. Temperature.
25
10
25ºC
10
ILO = -50 mA
VHS = GND
EN = VHB = VDD
VDD = 10V
VDD = 15V
15
10
VDD = 20V
5
-40ºC
5
10
11
12
13
14
15 16
VDD (V)
17
18
FIGURE 2-15:
HO Output Source
ON-Resistance vs. VDD.
DS20005531A-page 10
19
20
0
-50
-25
0
25
50
75
Temperature (°C)
100
125
FIGURE 2-18:
LO Output Source
ON-Resistance vs. Temperature.
 2016 Microchip Technology Inc.
MIC4609
Note: Unless otherwise indicated, TA = +25°C with 10V  VDD  20V.
9
VxHS = 0V
VDD rising
8.6
8.4
VDD falling
tR (ns)
UVLO Threshold (V)
8.8
VHB rising
8.2
8
7.8
VHB falling
7.6
7.4
-50
-25
0
25
50
Temperature (°C)
700
680
660
640
620
600
580
560
540
520
500
TA = 25°C
VHS = 0V
CL = 1 nF
LI to LO rising
HI to HO rising
11
12
13
14 15
VDD (V)
16
17
18
19
tR (ns)
Delay (ns)
LI to LO falling
650
600
550
HI to HO rising
500
-25
FIGURE 2-21:
Temperature.
0
25
50
75
Temperature (°C)
100
Propagation Delay vs.
 2016 Microchip Technology Inc.
13
125
14
15 16
VDD (V)
17
18
19
20
HO Rise Time vs. VDD
VHS = 0V
CL = 1 nF
25°C
-40°C
11
12
13
FIGURE 2-23:
Voltage.
LI to LO rising
-50
-40°C
125°C
10
VDD = 10V
VHS = 0V
CL = 1 nF
HI to HO falling
25°C
70
65
60
55
50
45
40
35
30
25
20
15
10
20
Propagation Delay vs. VDD
700
125°C
FIGURE 2-22:
Voltage.
HI to HO falling
FIGURE 2-20:
Voltage.
750
125
VDD/VHB ULVO vs.
LI to LO falling
10
800
100
tF (ns)
Delay (ns)
FIGURE 2-19:
Temperature.
75
70
V = 0V
65 CHS= 1 nF
L
60
55
50
45
40
35
30
25
20
15
10
10 11 12
70
65
60
55
50
45
40
35
30
25
20
15
10
14
15 16
VDD (V)
17
18
19
20
HO Fall Time vs. VDD
VHS = 0V
CL = 1 nF
125°C
25°C
-40°C
10
11
12
FIGURE 2-24:
Voltage.
13
14 15 16
VDD (V)
17
18
19
20
LO Rise Time vs. VDD
DS20005531A-page 11
MIC4609
70
65
60
55
50
45
40
35
30
25
20
15
10
450
Dead Time (ns)
25°C
-40°C
HO fall to LO rise
400
350
300
LO fall to HO rise
250
200
11
12
13
14 15
VDD (V)
FIGURE 2-25:
Voltage.
70
65
60
55
50
45
40
35
30
25
20
15
10
16
17
18
19
20
LO Fall Time vs. VDD
10
11
12
13
14 15 16
VDD (V)
17
18
19
20
Dead Time vs. VDD Voltage.
FIGURE 2-28:
500
VDD = 10V
VHS = 0V
CL = 1 nF
VDD = 10V
VHS = 0V
CL = 1 nF
450
HO fall
HO fall to LO rise
LO fall
LO rise
HO rise
400
350
300
LO fall to HO rise
250
200
-50
-25
0
25
50
75
Temperature (°C)
100
125
-25
0
25
50
Temperature (°C)
75
HO fall
HO fall to LO rise
400
350
300
250
LO rise
125
VDD = 20V
VHS = 0V
CL = 1 nF
450
HO rise
100
Dead Time vs. Temperature
500
VDD = 20V
VHS = 0V
CL = 1 nF
Dead Time (ns)
70
65
60
55
50
45
40
35
30
25
20
15
10
-50
FIGURE 2-29:
(VDD = 10V).
FIGURE 2-26:
Rise/Fall Time vs.
Temperature (VDD = 10V).
tR/tF (ns)
TA = 25°C
VHS = 0V
CL = 1 nF
125°C
10
tR/tF (ns)
500
VHS = 0V
CL = 1 nF
Dead Time (ns)
tF (ns)
Note: Unless otherwise indicated, TA = +25°C with 10V  VDD  20V.
LO fall to HO rise
LO fall
200
-50
-25
0
25
50
75
Temperature (°C)
FIGURE 2-27:
Rise/Fall Time vs.
Temperature (VDD = 20V).
DS20005531A-page 12
100
125
-50
-25
FIGURE 2-30:
(VDD = 20V).
0
25
50
75
Temperature (°C)
100
125
Dead Time vs. Temperature
 2016 Microchip Technology Inc.
MIC4609
Note: Unless otherwise indicated, TA = +25°C with 10V  VDD  20V.
0.5
700
OC Threshold (V)
0.49
Propagation Delay (ns)
VHS = 0V
CL = 0 nF
0.495
125°C
0.485
0.48
0.475
25°C
0.47
0.465
0.46
-40°C
0.455
680
VHS = 0V
CL = 0 nF
660
VDD = 20V
640
620
600
VDD = 15V
580
VDD = 10V
560
0.45
10
11
12
13
FIGURE 2-31:
VDD Voltage.
14 15 16
VDD (V)
17
18
19
20
Overcurrent Threshold vs.
-50
-25
0
25
50
Temperature (°C)
75
100
125
FIGURE 2-34:
Overcurrent Propagation
Delay vs. Temperature.
0.5
OC Threshold (V)
0.495
0.49
VDD = 20V
0.485
0.48
0.475
0.47
VDD = 15V
0.465
0.46
VDD = 10V
0.455
VHS = 0V
CL = 0 nF
0.45
-50
-25
0
FIGURE 2-32:
Temperature.
Propagation Delay (ns)
700
680
25
50
75
Temperature (°C)
100
125
Overcurrent Threshold vs.
VHS = 0V
CL = 0 nF
125°C
660
-40°C
640
620
25°C
600
580
560
10
11
12
13
14 15 16
VDD (V)
17
18
19
20
FIGURE 2-33:
Overcurrent Propagation
Delay vs. VDD Voltage.
 2016 Microchip Technology Inc.
DS20005531A-page 13
MIC4609
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
SOICW-28LD
Symbol
I/O
1
VDD
Power
2
AHI
IN
A-Phase High-Side Drive Input
3
BHI
IN
B-Phase High-Side Drive Input
4
CHI
IN
C-Phase High-Side Drive Input
5
ALI
IN
A-Phase Low-Side Drive Input
6
BLI
IN
B-Phase Low-Side Drive Input
7
CLI
IN
C-Phase Low-Side Drive Input
8
FAULT
OUT
9
ISNS
IN
Current Sense Input for Overcurrent Shutdown
10
EN
IN
Enable Input
Logic high on the Enable pin results in normal operation.
Logic low forces the device to enter Shutdown mode.
11
RCIN
OUT
Overcurrent Fault Clear Delay Pin
Connect to an external capacitor to set the fault clear delay.
12
VSS
GND
Logic Ground Pin
13
COM
—
14
CLO
OUT
C-Phase Low-Side Drive Output
Connect to the gate of the external low-side power MOSFET or IGBT.
15
BLO
OUT
B-Phase Low-Side Drive Output
Connect to the gate of the external low-side power MOSFET or IGBT.
16
ALO
OUT
A-Phase Low-Side Drive Output
Connect to the gate of the external low-side power MOSFET or IGBT.
17, 21, 25
NC
—
No Connect
18
CHS
—
C-Phase High-Side Drive Return Connection
Connect to the emitter or source of the external high-side power device.
Connect the bootstrap capacitor between this pin and the CHB pin.
19
CHO
OUT
20
CHB
Power
22
BHS
—
23
BHO
OUT
DS20005531A-page 14
Description
Input Supply for Gate Drivers
Decouple this pin to VSS with a > 2.2 µF capacitor.
Connect anode of bootstrap diodes to this pin.
Fault Output
Open drain asserts low to indicate Overcurrent or VDD Undervoltage condition.
Low-Side Driver Return Pin
C-Phase High-Side Drive Output
Connect to the gate of the external high-side power MOSFET or IGBT.
C-Phase High-Side Bootstrap Supply
External bootstrap capacitor is required.
Connect the bootstrap capacitor between this pin and CHS.
Connect to the anode of the external bootstrap diode.
B-Phase High-Side Drive Return Connection
Connect to the emitter or source of the external high-side power device.
Connect the bootstrap capacitor between this pin and the BHB pin.
B-Phase High-Side Drive Output
Connect to the gate of the external high-side power MOSFET or IGBT.
 2016 Microchip Technology Inc.
MIC4609
TABLE 3-1:
PIN FUNCTION TABLE (CONTINUED)
SOICW-28LD
Symbol
I/O
24
BHB
Power
26
AHS
—
27
AHO
OUT
28
AHB
Power
 2016 Microchip Technology Inc.
Description
B-Phase High-Side Bootstrap Supply
External bootstrap capacitor is required.
Connect the bootstrap capacitor between this pin and BHS.
Connect to the anode of the external bootstrap diode.
A-Phase High-Side Drive Return Connection
Connect to the emitter or source of the external high-side power device.
Connect the bootstrap capacitor between this pin and the AHB pin.
A-Phase High-Side Drive Output
Connect to the gate of the external high-side power MOSFET or IGBT.
A-Phase High-Side Bootstrap Supply
External bootstrap capacitor is required.
Connect the bootstrap capacitor between this pin and AHS.
Connect to the anode of the external bootstrap diode.
DS20005531A-page 15
MIC4609
4.0
FUNCTIONAL DESCRIPTION
The UVLO circuits are illustrated in the functional block
diagrams. The low-side UVLO circuit, Functional Block
Diagram MIC4609 – Phase x Drive Circuit, monitors
the voltage between the VDD and VSS pins. The circuit
keeps all the drivers off when VDD is less than the
UVLO threshold voltage.
The MIC4609 is a noninverting, 600V three-phase
IGBT/MOSFET driver designed to independently drive
six IGBTs or MOSFETs in a three-phase bridge. The
MIC4609 offers a wide 10V-to-20V VDD operating
supply range with six independent inputs (TTL or
3.3V CMOS compatible).
The three high-side UVLO circuits, shown in Typical
Application Circuit MIC4609 – 300V, 3-Phase Motor
Driver, monitor the voltage between the xHB and xHS
pins. The circuit keeps its respective high-side output
off when VHB - VHS is less than the UVLO threshold
voltage.
The driver is comprised of six input buffers with
hysteresis, four independent UVLO circuits (three
high-side monitoring the HB voltage and one low-side
monitoring the VDD voltage), and six output drivers.
The high-side output drivers utilize a high-speed
level-shifting circuit that is referenced to the HS pin. An
overcurrent protection circuit turns off all outputs during
an overcurrent fault.
4.1
4.2
Startup and UVLO
The startup sequence is illustrated in Figure 4-1. As
VDD rises above an unspecified threshold, VT, the
internal circuitry becomes active, the FAULT pin
asserts low and the UVLO circuitry begins to monitor
VDD. When the rising VDD reaches the UVLO
threshold, a current source begins charging the RCIN
pin's external capacitor until it reaches the RCIN delay
threshold. The output drivers are enabled once the
RCIN threshold is reached and the EN pin is asserted
high.
UVLO Protection
The UVLO circuits force the driver's outputs low until
the supply voltage exceeds the UVLO threshold.
Hysteresis in the UVLO circuits prevents system noise
and finite circuit impedance from causing chatter during
turn-on.
UVLO Rising Level (VDDR)
UVLO Falling Level
VDD
VDD falls below
UVLO
threshold
RCIN rises
above threshold
EN rise enables
analog ckts.
EN fall shuts
down all ckts.
RCIN rises
above threshold
RCIN Delay Threshold
UVLO fall
starts RCIN
FAULT
VDD rises
above VDDR
RCIN
VDD rises
above VT
EN
UVLO
(Internal)
Normal Operation
FIGURE 4-1:
DS20005531A-page 16
Startup and Fault Timing Diagram.
 2016 Microchip Technology Inc.
MIC4609
TABLE 4-1:
OPERATIONAL TRUTH TABLE
ULVO (1, 2)
Outputs (3, 4)
Condition
xHI
xLI
EN
HB ULVO
VDD ULVO
xHO
xLO
Disabled
X
X
L
X
X
L
L
VDD ULVO
X
X
X
X
L
L
L
VHB ULVO
X
L or H
H
L
H
L
L or H
H
H
H
H
L
L
H
H
H
L
L
Switching
Note 1:
2:
3:
4:
4.3
L
H
H
H
H
L
H
H
L
H
H
H
H
L
L
L
H
H
H
L
L
UVLO = H when VDD > UVLO threshold
UVLO = L when VDD < UVLO threshold
xHO and xLO remain low if both xHI and xLI are low when the VDD rises above the UVLO threshold or
when the EN pin is asserted high. Normal switching operation begins when one of the inputs changes
state from L to H.
Anti-shoot-through circuit prevents a high on both outputs simultaneously.
Enable Inputs
There is one external Enable pin that controls all three
phases. A logic high on the enable pin (EN) allows for
startup of all phases and normal operation. Conversely,
when a logic low is applied on the Enable pin, all
phases turn off and the device enters a low current
Shutdown mode. All outputs (xHO and xLO) are pulled
low when EN is low. The EN pin is internally pulled
down. Leaving the pin open disables the part.
 2016 Microchip Technology Inc.
DS20005531A-page 17
MIC4609
4.4
Input Stage
An internal pull-down resistor is connected to the
xHI and xLI pins. This pulls the driver output pins low if
the inputs are disconnected or left floating. A small
amount of hysteresis is programmed into the input to
prevent false triggering of the output. In addition, each
input has a minimum pulse-width filter for additional
noise immunity protection. The input pulse width must
exceed the tFLTR time before the outputs will change
state. Refer to the Electrical Characteristics table and
Figure 4-3 for additional information.
The xHI and xLI pins are referenced to the COM pin
and have a CMOS/TTL compatible input range. The
input threshold voltage is independent of the
VDD supply. The input pin voltage must not exceed the
VDD pin voltage. The voltage state of the input signal(s)
does not change the quiescent current draw of the
driver. The input stage block diagram is shown in
Figure 4-2.
Min PW Filter
xHI/xLI
FIGURE 4-2:
Input Stage Block Diagram.
Input and output
pulse widths (tPW) are equal
tFLTR
tPW1
tPW
tPW > tFLTR
xLI, xHI
tPW1 < tFLTR
tOFF
tFLTR
xLO, xHO
tON
tPW
tFLTR
tFLTR tPW1
tPW
xLI, xHI
tPW > tFLTR
tPW1 < tFLTR
xLO, xHO
tOFF
tFLTR
tON
tPW
FIGURE 4-3:
DS20005531A-page 18
Minimum Pulse-Width Diagram.
 2016 Microchip Technology Inc.
MIC4609
4.5
Dead Time and
Anti-Shoot-Through Protection
Shoot-through occurs when both the high and low-side
IGBTs/MOSFETs of a particular phase are ON at the
same time. The inputs of each phase use
anti-shoot-through circuitry to prevent this condition
from occurring. If both the HI and LI inputs of a phase
go high, both outputs (HO and LO) of that phase go low.
In addition to anti-shoot-through circuitry, a fixed
"dead-time" delay is added to the input-to-output
propagation delay. This allows the IGBTs/MOSFETs in
a particular phase to fully turn off before the other turns
on.
tR
tF
90%
90%
10%
xHI
xLI
10%
tPW
50%
50%
VIL
xLO
VIH
tOFF
tON
90%
10%
90%
tD
xHO
FIGURE 4-4:
tD
10%
Dead Time, Propagation Delay, and Rise/Fall-Time Diagram.
 2016 Microchip Technology Inc.
DS20005531A-page 19
MIC4609
4.6
Low-Side Driver Output Stage
The low-side driver, shown in Figure 4-5, is designed to
drive an N-channel MOSFET or IGBT. The driver is
referenced to the COM pin, which can be floating with
respect to ground. The COM reference gives the gate
drive currents a return path without having to flow
through the current sense resistor.
Low driver impedances allow the external
IGBT/MOSFET to be turned on and off quickly. The
rail-to-rail drive capability of the output ensures a
low VCE or RDSON from the external power device.
When driving the external IGBT on, the driver's internal
P-channel MOSFET is turned on and VDD is applied to
the gate of the external IGBT. To turn off the external
IGBT, the driver's N-channel FET is turned on, which
discharges the external IGBT's gate.
4.7
High-Side Driver and Bootstrap
Circuit
The High-Side driver is designed to drive a floating
N-channel FET or IGBT, whose source/emitter terminal
is referenced to the HS pin. A simplified diagram of the
high-side driver section is shown in Figure 4-6.
HV
VDD
Level
Shift
DBST
xHB
CB
xHO
RG
xHS
VDD
DCLAMP
RHS
xHS Node
FIGURE 4-6:
High-Side Driver and
Bootstrap Circuit Block Diagram.
xLO
RG
COM
FIGURE 4-5:
Diagram.
DS20005531A-page 20
Low-Side Driver Block
A low-power, high-speed, level-shifting circuit isolates
the low-side (VSS pin) referenced circuitry from the
high-side (xHS pin) referenced driver. Power to the
high-side driver and UVLO circuit is supplied by the
bootstrap capacitor (CB) while the voltage level of the
xHS pin is shifted high.
The bootstrap circuit consists of an external diode,
DBST, and an external capacitor, CB. In a typical
application, such as the motor driver shown in
Figure 4-7 (Phase A illustrated only), the AHS pin is at
ground potential while the low-side MOSFET is ON.
The internal diode charges capacitor CB to VDD - VF
during this time (where VF is the forward voltage drop
of the internal diode). After the low-side MOSFET is
turned off and the AHO pin turns on, the voltage across
capacitor CB is applied to the gate of the high-side
external MOSFET. As the high-side MOSFET turns on,
voltage on the AHS pin rises with the source of the
high-side MOSFET until it reaches VDD. As the AHS
and AHB pins rise, the internal diode is reverse biased,
preventing capacitor CB from discharging. During this
time, the high-side MOSFET is kept ON by the voltage
across capacitor CB.
 2016 Microchip Technology Inc.
MIC4609
VIN
DBST
VIN
CB
VDD
AHB
CVDD
HI
Phase B
AHO RG
Level
shift
AHS
RHS
Phase A
M
DCLAMP
LI
ALO
VSS
Phase C
RG
COM
RSNS
FIGURE 4-7:
4.8
MIC4609 Motor Driver Typical Application – Phase A.
Overcurrent Protection Circuitry
The MIC4609 provides overcurrent protection for the
3-phase bridge. It consists of:
• a comparator that senses the voltage across a
current-sense resistor
• a latch and timer that keep all gate drivers off
during a fault
• an open-drain FAULT pin that pulls low during the
fault.
Figure 4-8 illustrates the overcurrent protection
sequence. When an overcurrent condition is detected,
the FAULT pin is pulled low and a latch disables the
gate drive outputs for a time determined by the RCIN
pin capacitor. After the delay circuit times out, the latch
is reset, the FAULT pin is deasserted to a high
impedance state and the gate drive outputs are
re-enabled.
 2016 Microchip Technology Inc.
DS20005531A-page 21
MIC4609
Blanking
Time
ISNS falls
below threshold
ISNS Threshold
ISNS
RCIN Threshold
RCIN
Normal
Operation
Normal
Operation
OC Fault
FAULT
FIGURE 4-8:
4.8.1
Overcurrent Fault Sequence.
ISNS
The ISNS pin may be used to monitor motor winding
currents. The measurement is referenced to the
VSS pin and can sense the voltage across a low-side
current sense resistor or it may be connected to a
current sense transformer. The current sense resistor
is typically connected between the source pins
(MOSFET) or emitter pins (IGBT) of all three low-side
switches and power ground.
If the peak voltage on the ISNS pin exceeds the VISNS
threshold, it will cause all six outputs to latch off. A
blanking circuit on the ISNS comparator output
prevents noise from falsely tripping the overcurrent
circuit. The ISNS pin is internally pulled down to VSS
but may be externally connected to VSS ground for
improved noise immunity if the overcurrent feature is
not used.
4.8.2
RCIN
A capacitor connected to the RCIN pin determines the
amount of time the gate drive outputs are latched off
before they can be restarted.
During normal operation, the RCIN pin is internally
pulled low. Once an overcurrent condition is detected,
the RCIN pin capacitor is charged up by an internal
current source until the voltage reaches the
VRCIN+ threshold and the latch is reset. The outputs are
then enabled.
DS20005531A-page 22
The delay time can be approximated by applying
Equation 4-1.
EQUATION 4-1:
C RCIN  VRCIN+
t DLY = ----------------------------------------I RCIN
Where:
CRCIN
=
External capacitance on the RCIN pin
IRCIN
=
RCIN pin current source
(typically 0.44 µA)
VRCIN+
=
Internal comparator threshold
4.8.3
FAULT
This open-drain output is asserted low for an
overcurrent condition or when the VDD voltage is below
the UVLO threshold. It will de-assert to a
high-impedance state once the VDD rises above the
UVLO threshold or when the RCIN pin voltage has
reached the VRCIN+ threshold. During normal
operation, the internal pull-down MOSFET of the pin is
high impedance. A pull-up resistor must be connected
to this pin.
 2016 Microchip Technology Inc.
MIC4609
5.0
APPLICATION INFORMATION
5.1
Bootstrap Circuit
The high-side gate drive cannot be operated
continuously (100% duty cycle). It must be periodically
turned off to refresh/recharge the bootstrap capacitor,
CB. There are two separate requirements to consider
when choosing the bootstrap capacitor value:
EQUATION 5-2:
• IGBT or MOSFET gate charge
• Duration of the high-side switch on-time
The high-side bootstrap circuit for Phase A is illustrated
in Figure 5-1.
DBST
CVDD
AHI
AHB
CB
*RCB
AHO RG
Level
shift
AHS
RHS
DCLAMP
ALI
ALO
RG
COM
* Optional Components
FIGURE 5-1:
MIC4609 – Bootstrap Circuit.
The bootstrap capacitor voltage drops each time it
delivers charge to turn on the IGBT. The voltage drop
depends on the gate charge required by the IGBT. Most
IGBT and MOSFET specifications contain gate charge
versus VGE or VGS voltage information or graphs.
Based on this information and a recommended VHB of
0.1V to 0.5V, the minimum value of bootstrap
capacitance is calculated by applying Equation 5-1.
EQUATION 5-1:
Q GATE
C B  ----------------V HB
Where:
QGATE
=
Total gate charge at VHB
VHB
=
Voltage drop at the HB pin
After the high-side switch has turned on, the bootstrap
capacitor will continue to discharge due to leakage
currents in the bootstrap capacitor, the IGBT/MOSFET
gate-to-source and the driver (HS-pin-to-ground
leakage).
 2016 Microchip Technology Inc.
tON  I discharge
C B  ----------------------------------V HB
Where:
tON
=
Maximum ON-time of the high-side
switch
VHB
=
Voltage drop at the HB pin
Idischarge
=
Total discharge current at the HB pin
(capacitor, IGBT/MOSFET, and HB
pin)
VIN
*RHB
VDD
Typical leakage currents for the bootstrap capacitor
and IGBT/MOSFET are in the 100 nA range. The
MIC4609 HS-pin-to-driver leakage current is generally
higher with typical values in the 1 µA range (or higher
at high junction temperature and voltage). The
minimum value of bootstrap capacitor that prevents an
excessive drop in the gate drive voltage to the
high-side switch is calculated as per Equation 5-2.
Resistors RHB and RCB can be used to reduce the peak
CB charge current or modify the high-side
IGBT/MOSFET turn-on time. This helps reduce noise
and EMI as well as ripple on the VDD pin.
The resistor in series with the HB pin, RHB, controls the
turn-on time of the high-side switch by limiting the
charge current into the gate.
Adding a resistor in series with capacitor CB will reduce
the peak charging current drawn through diode DBST. It
has some effect on slowing down the high-side switch
turn-on time, however, it is not as effective as resistor
RHB since charging current also comes from VDD until
the high-side switch starts to turn on and raise the
voltage on the HB node.
5.2
HS Node Clamp
A resistor/diode clamp between the switching node and
the HS pin is recommended to minimize large negative
glitches or pulses on the HS pin.
As shown in Figure 5-2, the high-side and low-side
IGBTs turn on and off to regulate motor speed. During
the on-time, when the high-side IGBT is conducting,
current flows into the motor. After the high-side IGBT
turns off, and before the low-side IGBT turns on, there
is a brief period of time (dead time) that prevents both
IGBTs from being ON at the same time. During the
dead time, current from the motor flows through the
diode in parallel with the low-side IGBT. Depending on
the diode characteristics (VF and turn-on time), the
motor current and circuit parasitics, the initial negative
voltage on the switch node can be several volts or
more.
Even though the HS pin is rated for negative voltage, it
is good practice to clamp the HS pin with a resistor and
diode to prevent excessive negative voltage from
damaging the driver. Depending on the application and
DS20005531A-page 23
MIC4609
amount of negative voltage on the switch node, a 1A
fast recovery diode and a minimum 10 resistor are
recommended. A higher current diode and/or larger
values of resistance can be used if necessary.
DBST
CB
VIN
VDD
Adding a series resistor in the switch node limits the
peak high-side driver current, which affects the
switching speed of the high-side driver. The resistor, in
series with the HO pin, may be reduced to help
compensate for the extra HS pin resistance.
External
IGBT
AHB
CGC
RON
AHO
RG
DBST
VIN
CGE
ROFF
CB
AHB
VDD
CVDD
AHI
AHS
DCLAMP
AHO RG
Level
shift
AHS
RHS
FIGURE 5-3:
an External IGBT.
DCLAMP
ALI
ALO R
G
M
5.3.2
Negative HS Pin Voltage.
Power Dissipation Considerations
Power dissipation in the driver can be separated into
two areas:
• Gate driver dissipation
• Quiescent current dissipation used to supply the
internal logic and control functions
5.3.1
GATE DRIVER POWER
DISSIPATION
Power dissipation in the output driver stage is mainly
caused
by
charging
and
discharging
the
gate-to-emitter and gate-to-collector capacitance of the
external IGBT. Figure 5-3 shows a simplified equivalent
circuit of the MIC4609 driving an external
high-side IGBT.
MIC4609 High-Side Driving
DISSIPATION DURING THE
EXTERNAL IGBT/MOSFET
TURN-ON
COM
FIGURE 5-2:
RHS
VNEG
10W
5.3
RG_INT
Energy from capacitor CB is used to charge up the input
capacitance of the IGBT (CGE and CGC). The energy
delivered to the gate is dissipated in the three resistive
components, RON, RG and RG_INT. RG is the series
resistor between the driver output and the IGBT. RG_INT
is the gate resistance of the IGBT. RG_INT is usually
listed in the IGBT or MOSFET specifications. The ESR
of capacitor CB and the resistance of the connecting
etch can be ignored since they are much less than RON
and RG_INT.
The effective capacitances of CGE and CGC are difficult
to calculate because they vary nonlinearly with IC, VGE,
and VCE. Most power IGBT and MOSFET
specifications include a graph of total gate charge
versus VGE. Figure 5-4 shows a typical gate charge
curve for an arbitrary IGBT. The chart shows that for a
gate voltage of 12V, the IGBT requires 12 nC of charge.
VGE, Gate-to-Emitter Voltage
(V)
20
16
12
8
4
0
0
FIGURE 5-4:
DS20005531A-page 24
4
8
12
QG, Total Gate Charge (nC)
16
Typical Gate Charge vs. VGE.
 2016 Microchip Technology Inc.
MIC4609
The power dissipated by the resistive components of
the gate drive circuit during turn-on is calculated as
shown in Equation 5-3.
Letting RON = ROFF, the power dissipated in the
individual driver output in the IC is calculated as shown
in Equation 5-4:
EQUATION 5-3:
EQUATION 5-4:
PDRIVER = Q G  V GE  f S  D
R ON
P DISS = P DRIVER  ------------------------------------------------RON + RG + RG_INT
Where:
PDRIVER (1)
=
Average drive circuit power due to
switching
QG
=
Total gate charge at VGE
The total power dissipated in the MIC4609, due to
switching, is equal to the sum of all six driver
dissipations.
VGE
=
Gate-to-emitter voltage on the
IGBT
5.3.3
fS
=
Switching frequency of the gate
drive circuit
(2)
=
D
Note 1:
2:
Operating duty cycle of the driver
output
PDRIVER is the power dissipated by the
individual driver for one of the six gate
drive outputs.
Operating duty cycle is the percentage of
time that particular driver output is
switching during one rotation of the
motor.
The power dissipated by each of the internal gate
drivers (high-side or low-side) is equal to the ratio of
RON and ROFF to the external resistive losses in RG
and RG_INT.
SUPPLY CURRENT POWER
DISSIPATION
Power is dissipated in the MIC4609 even if nothing is
being driven. The supply current is drawn by the bias
for the internal circuitry, the level shifting circuitry, and
shoot-through current in the output drivers. The supply
current is proportional to the operating frequency and
the VDD and VHB voltages. Figures 2-9 and 2-10 show
how supply current varies with switching frequency and
supply voltage.
The power dissipated by the MIC4609 due to supply
current is calculated by applying Equation 5-5.
EQUATION 5-5:
PDISS_SUPPLY = V DD  I DD  VHB  I HB
5.3.4
TOTAL POWER DISSIPATION AND
THERMAL CONSIDERATIONS
Total power dissipation in the MIC4609 is equal to the
power dissipation caused by driving the external IGBTs
and the supply current. Equation 5-6 shows this
relation.
EQUATION 5-6:
P DISS_TOTAL = P DISS_SUPPLY +  PDISS_DRIVERS
The die temperature can be calculated after the total
power dissipation is determined as shown in
Equation 5-7.
EQUATION 5-7:
T J = T A + P DISS_TOTAL   JA
Where:
TA = Maximum ambient temperature (°C)
TJ = Junction temperature (°C)
PDISS_TOTAL = MIC4609 power dissipation (W)
JA = Thermal resistance from
junction-to-ambient air (°C/W)
 2016 Microchip Technology Inc.
DS20005531A-page 25
MIC4609
5.3.5
OTHER TIMING CONSIDERATIONS
Make sure the input signal pulse width is greater than
the minimum specified pulse width. An input signal that
is less than the minimum pulse width may result in no
output pulse or an output pulse whose width is
significantly less than the input.
The maximum duty cycle (ratio of high-side on-time to
switching period) is controlled by the minimum pulse
width of the low side and by the time required for the CB
capacitors to charge during the off-time. Adequate time
must be allowed for the CB capacitor to charge up
before the high-side driver is turned on.
5.4
Decoupling Capacitor Selection
Decoupling capacitors are required on the VDD pin to
supply the charge necessary to drive the external
IGBTs or MOSFETs and also to minimize the voltage
ripple on these pins. The VDD pin decoupling capacitor
supplies the transient current for all six drivers
(three high-side and three low-side). The minimum
recommended VDD capacitance should be greater than
the sum of all three CB capacitors with a minimum 1 µF
ceramic capacitor regardless of CB value.
Ceramic capacitors are recommended because of their
low impedance and small size. Z5U-type ceramic
capacitor dielectrics should not be used due to the
large change in capacitance over temperature and
voltage. Larger IGBTs/MOSFETs and low-switching
frequencies may require larger capacitance values for
proper operation. The voltage rating of the capacitors
depends on the supply voltage, ambient temperature
and the voltage derating used for reliability.
25V-rated X5R or X7R ceramic capacitors are
recommended for most applications. The minimum
capacitance value should be increased if low voltage
capacitors are used because even good quality
dielectric capacitors, such as X5R, will lose 40% to
70% of their capacitance value at the rated voltage.
Placement of the decoupling capacitors is critical. The
bypass capacitor for VDD should be placed as close as
possible between the VDD pin and the ground plane.
The bypass capacitor (CB) for the HB supply pin must
be located as close as possible between the HB and
HS pins. The etch connections must be short, wide,
and direct. The use of a ground plane to minimize
connection impedance is recommended.
5.5
Grounding, Component
Placement and Circuit Layout
Nanosecond switching speeds and high-peak currents
in and around the MIC4609 driver requires proper
placement and trace routing of all components.
Improper placement may cause degraded noise
immunity, false switching, excessive ringing, or circuit
latch-up.
Figure 5-5 shows the critical current paths when the
driver outputs go high and turn on the external IGBTs.
It also helps demonstrate the need for a low impedance
ground plane. Charge needed to turn on the IGBT
gates comes from the decoupling capacitors CVDD and
CB. Current in the low-side gate driver flows from CVDD
through the internal driver, into the IGBT gate, and out
the emitter. The return connection back to the
decoupling capacitor is made through the ground
plane. Any inductance or resistance in the ground
return path causes a voltage spike or ringing to appear
on the emitter of the IGBT. This voltage works against
the gate drive voltage and can either slow down or turn
off the IGBT during the period when it should be turned
on.
Current in the high-side driver is sourced from
capacitor CB and flows into the HB pin and out the HO
pin, into the gate of the high-side IGBT. The return path
for the current is from the emitter of the IGBT and back
to capacitor CB. The high-side circuit return path
usually does not have a low-impedance ground plane
so the etch connections in this critical path should be
short and wide to minimize parasitic inductance. As
with the low-side circuit, impedance between the
IGBT emitter and the decoupling capacitor causes
negative voltage feedback that fights the turn-on of the
IGBT.
It is important to note that capacitor CB must be placed
close to the HB and HS pins. This capacitor not only
provides the current for turn-on but it must also keep
HB pin noise and ripple low for proper operation of the
high-side drive circuitry.
LOW-SIDE DRIVE TURN-ON
CURRENT PATH
HS Node
xLO
VDD
VIN
GND
plane
CVDD
xHB
VSS
xHO
CB
HS Node
xHS
xLI
Level
shift
GND
plane
xHI
HIGH-SIDE DRIVE TURN-ON
CURRENT PATH
FIGURE 5-5:
DS20005531A-page 26
Turn-On Current Paths.
 2016 Microchip Technology Inc.
MIC4609
Figure 5-5 shows the critical current paths when the
driver outputs go low and turn off the external IGBTs.
Short, low-impedance connections are important
during turn-off for the same reasons given in the
turn-on explanation. Current flowing through the
internal diode replenishes charge in the bootstrap
capacitor, CB.
LOW-SIDE DRIVE TURN-OFF
CURRENT PATH
xLO
VDD
VIN
GND
plane
HS Node
CVDD
xHB
VSS
xHO
CB
HS Node
xHS
xLI
Level
shift
GND
plane
xHI
HIGH-SIDE DRIVE TURN-OFF
CURRENT PATH
FIGURE 5-6:
Turn-Off Current Paths.
It is highly recommended to use a ground plane to
minimize parasitic inductance and impedance of the
return paths. The MIC4609 is capable of greater than
1A peak currents and any impedance between the
MIC4609, the decoupling capacitors, and the external
IGBTs/MOSFETs will degrade the performance of the
driver.
 2016 Microchip Technology Inc.
DS20005531A-page 27
MIC4609
6.0
PACKAGING INFORMATION
DS20005531A-page 28
 2016 Microchip Technology Inc.
MIC4609
APPENDIX A:
REVISION HISTORY
Revision A (March 2016)
• Original release of this document.
 2016 Microchip Technology Inc.
DS20005531A-page 29
MIC4609
NOTES:
DS20005531A-page 30
 2016 Microchip Technology Inc.
MIC4609
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
Device
Lead Finish
XX
–X (1)
Package Code Tape and Reel
Option
Device:
MIC4609:
Lead Finish:
Y
=
Pb-Free with Industrial Temperature
Grade
Package Code:
WM
=
Plastic Small Outline, 7.52 mm Body,
28-Lead SOIC Wide Package
Examples:
a) MIC4609YWM-TR: 600V 3-Phase MOSFET/IGBT Driver,
7.52 mm body,
28LD SOIC Wide package,
Tape and Reel
600V 3-Phase MOSFET/IGBT Driver
 2016 Microchip Technology Inc.
Note 1:
Tape and Reel identifier only appears in the catalog
part number description. This identifier is used for
ordering purposes and is not printed on the device
package. Check with your Microchip Sales Office for
package availability with the Tape and Reel option.
DS20005531A-page 31
MIC4609
NOTES:
DS20005531A-page 32
 2016 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2016 Microchip Technology Inc.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate,
dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq,
KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST,
MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo,
RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O
are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
ClockWorks, The Embedded Control Solutions Company,
ETHERSYNCH, Hyper Speed Control, HyperLight Load,
IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut,
BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, Dynamic Average Matching, DAM, ECAN,
EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip
Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker,
Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2016, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
ISBN: 978-1-5224-0438-5
DS20005531A-page 33
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Germany - Dusseldorf
Tel: 49-2129-3766400
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Hong Kong
Tel: 852-2943-5100
Fax: 852-2401-3431
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Austin, TX
Tel: 512-257-3370
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Novi, MI
Tel: 248-848-4000
Houston, TX
Tel: 281-894-5983
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Canada - Toronto
Tel: 905-673-0699
Fax: 905-673-6509
China - Dongguan
Tel: 86-769-8702-9880
China - Hangzhou
Tel: 86-571-8792-8115
Fax: 86-571-8792-8116
India - Pune
Tel: 91-20-3019-1500
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-213-7828
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Germany - Karlsruhe
Tel: 49-721-625370
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Italy - Venice
Tel: 39-049-7625286
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Poland - Warsaw
Tel: 48-22-3325737
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
07/14/15
DS20000000A-page 34
 2016 Microchip Technology Inc.