Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems 4.5±0.3 ø2.2 3.9±0.3 2.4 1.5 Features High-power output, high-efficiency : PO = 4.6 mW (typ.) 2.9±0.25 1.2 1.7±0.2 0.9 0.8 2.8 Emitted light spectrum suited for silicon photodetectors Not soldered 0.8 max. Unit : mm 12.8 min. Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small size, thin side-view type package 2-1.2±0.3 2-0.45±0.15 0.45±0.15 2.54 R0.8 R0.6 Absolute Maximum Ratings (Ta = 25˚C) Parameter * Symbol Ratings Unit Power dissipation PD 75 mW Forward current (DC) IF 50 mA Pulse forward current IFP * 1 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to+85 ˚C Storage temperature Tstg –30 to +100 ˚C 1 2 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Symbol Conditions min typ 2.5 4.6 max Unit mW IF = 50mA 950 nm IF = 50mA 50 nm PO IF = 50mA Peak emission wavelength λP Spectral half band width ∆λ Forward voltage (DC) VF IF = 50mA 1.5 V Reverse current (DC) IR VR = 3V 10 µA Capacitance between pins Ct VR = 0V, f = 1MHz 35 pF Half-power angle θ The angle in which radiant intencity is 50% 17 deg. 1 LN54 Infrared Light Emitting Diodes IF — Ta IFP — Duty cycle IF — VF 60 80 Ta = 25˚C Ta = 25˚C 70 30 20 10 10 IF (mA) 40 1 Forward current IFP (A) 50 Pulse forward current Allowable forward current IF (mA) 10 2 10 –1 60 50 40 30 20 10 –2 10 0 – 25 0 20 40 60 80 10 –3 10 –2 100 10 –1 Ambient temperature Ta (˚C ) tw = 10µs Duty Cycle = 0.1% Ta = 25˚C 0.8 1 80 60 40 0 1 2 3 4 0 5 tw = 10µs (1) f = 100Hz (2) f = 21kHz (3) f = 42kHz (4) f = 60kHz Ta = 25˚C 10 2 (1) 10 (2) (4) (3) 1 0 10 20 30 40 50 10 –1 10 60 Forward current IF (mA) 10 2 10 3 λP — Ta 10 3 1000 IF = 50mA 10mA 1mA 0.8 0.4 0 – 40 0 40 80 Ambient temperature Ta (˚C ) 120 Peak emission wavelength λP (nm) IF = 50mA Relative radiant power ∆PO VF (V) IF = 50mA 1.2 10 2 10 1 – 40 10 4 Pulse forward current IFP (mA) ∆PO — Ta VF — Ta 1.6 Forward voltage 1.6 20 Forward voltage VF (V) 2 1.2 ∆PO — IFP 100 10 10 –1 0.4 10 3 Relative radiant power ∆PO Pulse forward current 10 2 0 Forward voltage VF (V) 120 Relative radiant power ∆PO IFP (A) 10 3 0 10 2 10 ∆PO — IF IFP — VF 10 4 1 Duty cycle (%) 0 40 80 Ambient temperature Ta (˚C ) 120 980 960 940 920 900 –40 0 40 80 Ambient temperature Ta (˚C ) 120 Infrared Light Emitting Diodes Directivity characteristics 0˚ IF = 50mA Ta = 25˚C Relative radiant intensity (%) 90 80 80 70 60 60 50 40 40 30 20 20 10˚ Frequency characteristics 20˚ 10 2 100 Ta = 25˚C Relative radiant intensity(%) 100 30˚ 40˚ 50˚ 60˚ 70˚ 10 Modulation output Spectral characteristics LN54 1 10 –1 80˚ 90˚ 0 860 900 940 980 Wavelength 1020 1060 1100 λ (nm) 10 –2 1 10 10 2 10 3 Frequency f (kHz) 3