Infrared Light Emitting Diodes LN184 Unit : mm ,,, 1.0 max. GaAlAs Infrared Light Emitting Diode 4.5±0.2 2.0 (0.29) Light source for distance measuring systems ø4.6±0.15 Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.) Infrared light emission close to monochromatics light : λP = 880 nm (typ.) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems Glass window Spherical lens (0.4) High-power output, high-efficiency : PO = 5 mW (typ.) 12.7 min. Features 2-ø0.45±0.05 2 1 2.45±0.25 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Power dissipation PD 190 mW Forward current (DC) IF 90 mA 230 mA 3 V * Pulse forward current IFP Reverse voltage (DC) VR Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C ø4.0±0.1 ø5.75max. 1: Anode 2: Cathode * Pulse conditions : Pulse of f = 10 kHz and duty cycle = 50% modulated with pulse of f = 0.375 Hz (1.6 s) and duty cycle = 37.5% Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Symbol Conditions min typ max 3.5 Unit PO IF = 100mA mW Peak emission wavelength λP IF = 100mA 880 nm Spectral half band width ∆λ IF = 100mA 50 nm Forward voltage (DC) VF IF = 100mA 1.55 Reverse current (DC) IR VR = 3V Rise time tr IFP = 100mA 20 ns Fall time tf IFP = 100mA 20 ns Half-power angle θ The angle in which radiant intencity is 50% 20 deg. 1.9 V 10 µA 1 LN184 Infrared Light Emitting Diodes IF — Ta IFP — VFP IF — VF 120 1 160 tw = 10µs f = 100Hz Ta = 25˚C 140 60 40 120 100 Pulse forward current Forward current Allowable forward current 80 IFP (A) 100 IF (mA) IF (mA) Ta = 25˚C 80 60 40 10 –1 20 20 20 40 60 80 0 100 0 Ambient temperature Ta (˚C ) 0.5 (2) (3) 1 10 –1 1 VF (V) IF = 100mA 1.4 1.2 10mA Pulse forward current IFP (A) λP — Ta 1000 0 40 80 120 IF = 100mA 1 10 –1 – 40 0 40 Directivity characteristics 0˚ Relative radiant intensity (%) 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 700 80 Spectral characteristics IF = 100mA 800 5 Ambient temperature Ta (˚C ) 100 900 4 Ambient temperature Ta (˚C ) IF = 100mA Peak emission wavelength λP (nm) 3 1mA 0.8 – 40 10 2 ∆PO — Ta 1.0 10 –2 1 10 1.6 10 –1 10 –2 10 –3 0 Pulse forward voltage VFP (V) 1.8 Forward voltage Relative radiant power ∆PO (1) 10 10 –2 2.0 VF — Ta (1) tw = 10µs Duty = 0.1% (2) tw = 50µs Duty = 50% (3) DC Ta = 25˚C 10 2 1.5 Forward voltage VF (V) ∆PO — IFP 10 3 1.0 Relative radiant intensity (%) 0 Relative radiant power ∆PO 0 – 25 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 600 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 780 820 860 900 940 Wavelength λ (nm) 980 1020