Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 1.0 7.65±0.2 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency :PO = 8 mW (typ.) Good radiant power output linearity with respect to input current Wide directivity : θ = 25 deg. (typ.) 26.3±1.0 24.3±1.0 5.25±0.3 1.5 Emitted light spectrum suited for silicon photodetectors 2-0.8 max. 2-0.6±0.15 Transparent epoxy resin package Long lead-wire type Parameter Symbol Ratings Unit PD 160 mW Forward current (DC) IF 100 mA Pulse forward current IFP* 1.5 A Power dissipation * Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) 0.6±0.15 2.54 2 1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter * Symbol * Conditions IF = 50mA min 5 typ max Unit Radiant power PO Peak emission wavelength λP IF = 50mA 8 mW 950 nm Spectral half band width ∆λ IF = 50mA 50 Forward voltage (DC) VF IF = 100mA 1.3 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 35 pF Half-power angle θ The angle in which radiant intencity is 50% 25 deg. nm 1.6 V 10 µA PO Classifications Class R S PO (mW) 5 to 8 >7 1 LN66L Infrared Light Emitting Diodes IF — Ta IFP — Duty cycle 120 tw = 10µs Ta = 25˚C 60 40 20 20 40 60 80 10 –1 10 –2 10 –3 10 –2 100 10 –1 0 10 2 10 0 0.4 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C (2) 1.6 2.0 ∆PO — Ta IF = 50mA Forward voltage 10 1.2 10 IF = 100mA 10 2 0.8 Forward voltage VF (V) 1.6 VF (V) ∆PO 1 VF — Ta (1) Relative radiant rower 40 Duty cycle (%) ∆PO — IFP 1 60 20 Ambient temperature Ta (˚C ) 10 3 80 1.2 50mA 10mA 0.8 0.4 ∆PO 0 1 Relative radiant power 0 – 25 100 10 IF (mA) Pulse forward current Allowable forward current 80 Ta = 25˚C Forward current IFP (A) IF (mA) 10 2 100 IF — VF 120 1 10 –1 10 –1 1 10 10 2 10 3 0 – 40 10 4 Pulse forward current IFP (mA) λP — Ta 1000 0 40 10 –2 – 40 0 40 960 940 920 120 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 980 80 Ambient temperature Ta (˚C ) 100 Relative radiant intensity (%) λP (nm) 120 Ambient temperature Ta (˚C ) IF = 50mA Peak emission wavelength 80 Relative radiant intensity (%) 10 –2 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 860 900 940 980 1020 1060 1100 Wavelength λ (nm) Infrared Light Emitting Diodes LN66L Frequency characteristics 10 Ta = 25˚C Modulation output 1 10 –1 10 –2 10 –3 10 10 2 Frequency 10 3 10 4 f (kHz) 3