Infrared Light Emitting Diodes LN671 GaAlAs Infrared Light Emitting Diode Unit : mm 5.3 max. 5.0±0.1 2.54±0.1 Light source for distance measuring systems 1.8±0.3 0.8±0.2 3 1.0±0.1 4 Features Small plastic package 4.3 max. 13.5±0.1 4.0±0.1 1.0±0.3 1.0±0.3 Fast response and high-speed modulation capability : tr, tf = 30 ns(typ.) 10˚ 10˚ Epin ø3.2 High-power output, high-efficiency : PO = 10 mW (typ.) 4-0.6 +0.1 –0.2 1.0±0.1 0.2 +0.1 –0.05 4-0.5±0.15 1 2 10˚ Absolute Maximum Ratings (Ta = 25˚C) Parameter * 10˚ 5˚ Symbol Ratings Unit Power dissipation PD 130 mW Forward current (DC) IF 70 mA Pulse forward current IFP * 1 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 5˚ 1: Anode 2: Common Cathode 3: NC 4: Common Cathode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter min typ 6 10 mW IF = 50mA 880 nm IF = 50mA 50 nm VF IF = 50mA 1.4 IR VR = 3V Rise time tr IFP = 50mA 30 ns Fall time tf IFP = 50mA 30 ns Half-power angle θ The angle in which radiant intencity is 50% 50 deg. Radiant power Symbol Conditions PO IF = 50mA Peak emission wavelength λP Spectral half band width ∆λ Forward voltage (DC) Reverse current (DC) max Unit 1.8 V 10 µA 1 LN671 Infrared Light Emitting Diodes IF — Ta IFP — Duty cycle 120 tw = 10µs Ta = 25˚C 60 40 20 0 – 25 0 20 40 60 80 IFP (mA) 10 1 10 –1 10 –2 10 –3 10 –2 100 10 –1 Ambient temperature Ta (˚C ) 1 10 –1 0 1 (2) 4 5 ∆PO — Ta 10 Relative radiant power ∆PO (1) 10 3 IF = 50mA IF = 50mA VF (V) 10 2 2 Pulse forward voltage VFP (V) VF — Ta Forward voltage Relative radiant power ∆PO 10 10 –2 10 2 2.2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 10 10 2 Duty cycle (%) ∆PO — IFP 10 3 1 tw = 10µs f = 100Hz Ta = 25˚C 10 3 Pulse forward current IFP (A) 80 Pulse forward current Allowable forward current IF (mA) 10 2 100 IFP — VFP 1.8 1.4 1.0 1 10 –1 1 10 10 2 10 3 0.6 – 40 10 4 Pulse forward current IFP (mA) λP — Ta 920 0 40 80 Relative radiant intensity (%) Peak emission wavelength λP (nm) 860 840 0 40 80 Ambient temperature Ta (˚C ) Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C IF = 50mA 880 10 –1 – 40 Ambient temperature Ta (˚C ) 100 900 120 80 90 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 Relative radiant intensity (%) 10 –2 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 820 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 750 800 850 900 950 1000 1050 Wavelength λ (nm)