PANASONIC LNA4801L

Infrared Light Emitting Diodes
LNA4801L
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
5.0±0.2
0.6
Features
Not soldered 2.0 max.
ø3.8±0.2
ø3.0±0.2
Fast response and high-speed modulation capability :
fC = 20 MHz (typ.)
15.0±1.0
4.5±0.3
Wide directivity : θ = 22 deg. (typ.)
2-0.8 max.
2-0.5±0.1
1.0
Transparent epoxy resin package
0.5±0.1
(1.5)
2.54
Parameter
Symbol
Ratings
Unit
PD
190
mW
Forward current (DC)
IF
100
mA
Pulse forward current
IFP*
1
A
Power dissipation
*
Reverse voltage (DC)
VR
3
V
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
1
1.7
Absolute Maximum Ratings (Ta = 25˚C)
2
1: Anode
2: Cathode
f = 100Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
*
Symbol
Conditions
min
typ
max
Center radiant intensity
Ie
IF = 50mA
Peak emission wavelength
λP
IF = 50mA
Spectral half band width
∆λ
IF = 50mA
40
Forward voltage (DC)
VF
IF = 100mA
1.6
Reverse current (DC)
IR
VR = 3V
Half-power angle
θ
The angle in which radiant intencity is 50%
22
deg.
Cutoff frequency
fC*
IFP = 50mA + 10mAp-p
20
MHz
Frequency when modulation optical power decreases by 3dB from 1MHz
12
Unit
mW/sr
860
nm
nm
1.9
10
PO(fCMHz)
10 log
=–3
P O (1MHz)
(
V
µA
)
1
LNA4801L
Infrared Light Emitting Diodes
IFP — Duty cycle
10 2
60
40
IFP (mA)
tw = 10µs
Ta = 25˚C
10
Pulse forward current
IFP (A)
80
Pulse forward current
1
10 –1
20
0
– 25
0
20
40
60
80
10 –2
10 –1
100
1
Ambient temperature Ta (˚C )
VF (V)
(2)
Forward voltage
I∆e
Relative radiant intensity
(1)
1
10 –1
10 2
10
0
1
2
50mA
1.4
1.0
λP — Ta
920
0
40
80
120
IF = 50mA
1
10 –1
– 40
0
40
Spectral characteristics
Directivity characteristics
0˚
IF = 50mA
Ta = 25˚C
Relative radiant intensity (%)
840
80
80
70
60
60
50
40
40
30
20
20
10˚
20˚
100
90
860
80
Ambient temperature Ta (˚C )
IF = 50mA
880
5
Ambient temperature Ta (˚C )
100
900
4
∆Ie — Ta
IF = 100mA
0.6
– 40
10 3
3
10
1.8
Pulse forward current IFP (mA)
Peak emission wavelength λP (nm)
1
Forward voltage VF (V)
2.2
(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C
1
10
VF — Ta
10
10 –2
10 2
Duty cycle (%)
∆Ie — IFP
10 2
tw = 10µs
f = 100Hz
Ta = 25˚C
10 3
10 –1
10 2
10
Relative radiant intensity ∆Ie
IF (mA)
Allowable forward current
100
IFP — VF
10 4
Relative radiant intensity (%)
IF — Ta
120
30˚
40˚
50˚
60˚
70˚
80˚
90˚
820
– 40
0
40
80
Ambient temperature Ta (˚C )
2
120
0
750
800
850
900
950
1000 1050
Wavelength λ (nm)