Variable Capacitance Diodes MA2Z376 (MA376) Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 For VCO of UHF band radio 5˚ • Small series resistance rD • S-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 1 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.9±0.1 Symbol 0.90±0.15 7˚ 0.00±0.05 Parameter 0.16 +0.10 –0.06 (0.4) 1.25±0.10 Reverse voltage (DC) (0.4) 1.7±0.10 ■ Features 2.5±0.2 2 1: Anode 2: Cathode SMini2-G1 Package Marking Symbol: 7C ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Series resistance * Symbol IR Conditions Min VR = 6 V Typ Max Unit 10 nA pF CD(1V) VR = 1 V, f = 1 MHz 14.00 16.00 CD(3V) VR = 3 V, f = 1 MHz 6.80 8.90 rD CD = 9 pF, f = 470 MHz 0.3 Ω Note) 1. Rated input/output frequency: 470 MHz 2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Note) The part number in the parenthesis shows conventional part number. Publication date: April 2002 SKD00041BED 1 MA2Z376 CD VR 100 100 50 Ta = 60°C −40°C 25°C 60 40 20 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) 1.03 3V 20 10 5 1 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) Reverse current IR (nA) 1 0.1 0.01 20 40 60 1.01 1.00 0.99 VR = 6 V 0 1.02 3 IR T a 10 f = 1 MHz VR = 1 V 30 2 0 80 100 120 140 160 Ambient temperature Ta (°C) 2 CD Ta 1.04 f = 1 MHz Ta = 25°C CD (Ta) CD (Ta = 25°C) 80 Diode capacitance CD (pF) Forward current IF (mA) I F VF 120 SKD00041BED 0.98 0 20 40 60 80 Ambient temperature Ta (°C) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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