PANASONIC MA2SV15

Variable Capacitance Diodes
MA2SV15
Silicon epitaxial planar type
Unit: mm
For VCO
0.13+0.05
–0.02
0.27+0.05
–0.02
5˚
• Good linearity and large capacitance-ratio in CD − VR relation
• Miniature Package, optimum for high-density mounting and highspped mounting
0.15 min.
1.3±0.1
■ Features
1.7±0.1
2
0.15 min.
1
0.8±0.1
■ Absolute Maximum Ratings Ta = 25°C
Unit
VR
6
V
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.7±0.1
Rating
0 to 0.01
Reverse voltage (DC)
Symbol
0.15 max.
5˚
Parameter
1: Anode
2: Cathode
SSMini2-F2 Package
Marking Symbol: 6A
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Reverse current (DC)
Diode capacitance
Symbol
IR
Conditions
Min
VR = 5 V
Typ
Max
Unit
10
nA
pF
CD(0.5V)
VR = 0.5 V, f = 1 MHz
7.30
7.91
CD(2.5V)
VR = 2.5 V, f = 1 MHz
2.98
3.23
Capacitance ratio
CD(0.5V)/CD(2.5V)
Series resistance *
rD
2.35
VR = 1 V, f = 470 MHz
2.55

0.45
Ω
Note) 1. Rated input/output frequency: 470 MHz
2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Publication date: April 2002
SKD00064AED
1
MA2SV15
I F  VF
CD  VR
100
120
CD  Ta
1.045
f = 1 MHz
Ta = 25°C
1.040
25°C
1.035
80
Ta = 60°C
60
−40°C
40
1.030
VR = 0.5 V
1.025
10
CD (Ta)
CD (Ta = 25°C)
Diode capacitance CD (pF)
Forward current IF (mA)
100
f = 1 MHz
1
1.020
1.015
2.5 V
1.010
1.005
1.000
0.995
20
0.990
0.985
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Forward voltage VF (V)
0
5
10
15
20
IR  T a
Reverse current IR (nA)
10
VR = 5 V
1
0.1
0.01
0
20
40
60
80
100 120 140
Ambient temperature Ta (°C)
2
25
30
Reverse voltage VR (V)
SKD00064AED
35
0.980
0 10 20 30 40 50 60 70 80 90 100
Ambient temperature Ta (°C)
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2001 MAR