PANASONIC XN1601

Composite Transistors
XN01601 (XN1601)
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
Unit: mm
For general amplification
2.90+0.20
–0.05
1.9±0.1
(0.95) (0.95)
2
1
10˚
1.1+0.2
–0.1
■ Basic Part Number of Element
Parameter
0 to 0.1
2SB0709A(2SB709A) + 2SD0601A(2SD601A)
■ Absolute Maximum Ratings
(Ta=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–60
V
Collector to emitter voltage
VCEO
–50
V
Emitter to base voltage
VEBO
–7
V
Collector current
IC
–100
mA
Peak collector current
ICP
–200
mA
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Total power dissipation
PT
300
mW
Overall Junction temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
Tr1
Tr2
Storage temperature
(0.65)
0.30+0.10
–0.05
●
2.8+0.2
–0.3
5
1.50+0.25
–0.05
4
0.4±0.2
●
3
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
1.1+0.3
–0.1
●
5˚
■ Features
0.16+0.10
–0.06
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini5-G1 Pakage
Marking Symbol: 7S
Internal Connection
5
Tr1
1
4
3
Tr2
2
Note) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
■ Electrical Characteristics
●
(Ta=25˚C)
Tr1
Parameter
Collector to base voltage
Symbol
Conditions
min
typ
max
Unit
VCBO
IC = –10µA, IE = 0
–60
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
V
ICBO
VCB = –20V, IE = 0
– 0.1
µA
ICEO
VCE = –10V, IB = 0
–100
µA
Forward current transfer ratio
hFE
VCE = –10V, IC = –2mA
Collector to emitter saturation voltage
VCE(sat)
IC = –100mA, IB = –10mA
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
80
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
2.7
pF
Collector cutoff current
●
160
460
– 0.3
– 0.5
V
Tr2
Parameter
Collector to base voltage
Symbol
Conditions
min
typ
max
Unit
VCBO
IC = 10µA, IE = 0
60
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
7
V
ICBO
VCB = 20V, IE = 0
0.1
µA
ICEO
VCE = 10V, IB = 0
100
µA
Forward current transfer ratio
hFE
VCE = 10V, IC = 2mA
Collector to emitter saturation voltage
VCE(sat)
IC = 100mA, IB = 10mA
0.1
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
150
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3.5
pF
Collector cutoff current
2
XN01601
160
460
0.3
V
Composite Transistors
XN01601
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
Characteristics charts of Tr1
IC — VCE
IC — I B
–60
Ta=25˚C
–200µA
–150µA
–20
–100µA
–10
Base current IB (µA)
–250µA
–40
–30
–40
–30
–20
–300
–250
–200
–150
–50
0
0
0
–2 –4 –6 –8 –10 –12 –14 –16 –18
0
Collector to emitter voltage VCE (V)
–100
–200
–300
IC — VBE
–25˚C
–160
–120
–80
–40
IC/IB=10
Ta=75˚C
25˚C
–0.3
–25˚C
–0.1
–0.03
–0.01
–0.003
0
–0.4
–0.8
–1.2
–1.6
–2.0
Base to emitter voltage VBE (V)
–0.001
–1
–3
–10
–30
–1.2
–1.6
hFE — IC
–3
–1
–0.8
600
–100 –300 –1000
Collector current IC (mA)
VCE=–10V
Forward current transfer ratio hFE
25˚C
Collector to emitter saturation voltage VCE(sat) (V)
VCE=–5V
0
–0.4
Base to emitter voltage VBE (V)
VCE(sat) — IC
–10
Ta=75˚C
0
–400
Base current IB (µA)
–240
–200
–100
–10
–50µA
0
VCE=–5V
Ta=25˚C
–350
–50
Collector current IC (mA)
Collector current IC (mA)
VCE= –5V
Ta=25˚C
IB=–300µA
–50
Collector current IC (mA)
IB — VBE
–400
–60
500
400
Ta=75˚C
300
25˚C
–25˚C
200
100
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
3
Composite Transistors
XN01601
fT — IE
Cob — VCB
140
120
100
80
60
40
20
0
0.1
0.3
1
3
10
30
f=1MHz
IE=0
Ta=25˚C
7
6
5
4
3
2
–2 –3 –5
2
–10
–20 –30 –50
0
0.01 0.03
–100
h Parameter — IE
VCB=–5V
Rg=50kΩ
Ta=25˚C
0.3
1
3
10
h Parameter — VCE
300
300
200
200
IE=2mA
f=270Hz
Ta=25˚C
hfe
hfe
16
0.1
Emitter current IE (mA)
Collector to base voltage VCB (V)
NF — IE
18
3
1
Emitter current IE (mA)
20
4
1
0
–1
100
VCB=–5V
f=1kHz
Rg=2kΩ
Ta=25˚C
5
Noise figure NF (dB)
Collector output capacitance Cob (pF)
100
100
12
Parameter h
14
f=100Hz
10
1kHz
8
50
Parameter h
Transition frequency fT (MHz)
VCB=–10V
Ta=25˚C
Noise figure NF (dB)
NF — IE
6
8
160
hoe (µS)
30
20
10
50
30
20
hoe (µS)
10
10kHz
6
5
4
5
hie (kΩ)
VCE= –5V
f=270Hz
Ta=25˚C
2
2
0
0.1
0.2 0.3 0.5
1
2
3
5
1
0.1
10
hre (×10–4)
3
3
Emitter current IE (mA)
hre (×10–4)
0.2 0.3 0.5
1
2
3
5
hie (kΩ)
2
1
0.1
10
0.2 0.3 0.5
1
2
3
5
10
Collector to emitter voltage VCE (V)
Emitter current IE (mA)
Characteristics charts of Tr2
IC — VCE
IB — VBE
Ta=25˚C
VCE=10V
VCE=10V
Ta=25˚C
IB=160µA
200
40
120µA
100µA
30
80µA
20
60µA
40µA
Base current IB (µA)
140µA
Collector current IC (mA)
1000
50
Collector current IC (mA)
IC — VBE
240
1200
60
800
600
400
25˚C
120
Ta=75˚C
–25˚C
80
40
200
10
160
20µA
0
2
4
6
8
Collector to emitter voltage VCE (V)
4
0
0
0
10
0
0.2
0.4
0.6
0.8
Base to emitter voltage VBE (V)
1.0
0
0.4
0.8
1.2
1.6
Base to emitter voltage VBE (V)
2.0
Composite Transistors
XN01601
IC — IB
VCE(sat) — IC
100
Collector to emitter saturation voltage VCE(sat) (V)
VCE=10V
Ta=25˚C
Collector current IC (mA)
200
160
120
80
40
0
0
200
400
600
800
10
3
1
0.3
25˚C
0.1
Ta=75˚C
–25˚C
0.03
Base current IB (µA)
0.3
1
3
10
30
100
Collector current IC (mA)
fT — IE
VCE=10V
500
Ta=75˚C
400
25˚C
300
–25˚C
200
100
0
0.1
0.3
1
3
10
30
100
Collector current IC (mA)
NV — IC
240
300
VCB=10V
Ta=25˚C
240
Noise voltage NV (mV)
Transition frequency fT (MHz)
IC/IB=10
30
0.01
0.1
1000
hFE — IC
600
Forward current transfer ratio hFE
240
180
120
60
VCE=10V
GV=80dB
200 Function=FLAT
Ta=25˚C
160
Rg=100kΩ
120
80
22kΩ
4.7kΩ
40
0
–0.1 –0.3
–1
–3
–10
–30
Emitter current IE (mA)
–100
0
10
20 30 50
100
200 300 500 1000
Collector current IC (µA)
5
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2001 MAR