ETC XN04390

Composite Transistors
XN04390
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Unit: mm
2.90+0.20
–0.05
1.9±0.1
(0.95) (0.95)
■ Features
3
2
1
(0.65)
• Two elements incorporated into one package.
(Transistor with built-in resistor)
• Reduction of the mounting area ad assembly cost by one half.
2.8+0.2
–0.3
6
5°
5
1.50+0.25
–0.05
4
0.16+0.10
–0.06
0.4±0.2
For digital circuit
For switching
0.30+0.10
–0.05
0.50+0.10
–0.05
1.1+0.2
–0.1
0 to 0.1
• UNR212X (UN212X) + UNR2223 (UN2223)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Tr1
Symbol
Rating
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
Tr2
IC
500
mA
Collector to base voltage
VCBO
−50
V
Collector to emitter voltage
VCEO
−50
V
Collector current
IC
−500
mA
Total power dissipation
PT
300
mW
Tj
150
°C
Tstg
−55 to +150
°C
Overall Junction temperature
Storage temperature
1.1+0.3
–0.1
10°
■ Basic Part Number of Element
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Type Package
Marking Symbol: DY
Internal Connection
6
Tr1
5
4
1
2
Tr2
3
Note) The part number in the parenthesis shows conventional part number.
1
XN04390
Composite Transistors
■ Electorical Caracteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector to base voltage
VCBO
IC = 10 µA, IE = 0
50
Collector to emitter voltage
VCEO
IC = 2 mA, IB = 0
50
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
1
ICEO
VCE = 50 V, IB = 0
1
µA
IEBO
VEB = 6 V, IC = 0
1
mA
hFE
VCE = 10 V, IC = 100 mA
VCE(sat)
IC = 100 mA, IB = 5 mA
0.25
V
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
High-level output voltage
VOH
VCC = 5 V, VB = 0.5 V, RL = 500 Ω
Low-level output voltage
VOL
VCC = 5 V, VB = 3.5 V, RL = 500 Ω
V
V
60
4.9
V
0.2
V
kΩ
Input resistance
R1
−30%
10
+30%
Resistance ratio
R1/R2
0.8
1.0
1.2
Transition frequency
fT
µA
VCB = 10 V, IE = −50 mA, f = 200MHz
200
MHz
• Tr2
Parameter
Conditions
Min
Typ
Max
Unit
VCBO
IC = −10 µA, IE = 0
−50
Collector to emitter voltage
VCEO
IC = −2 mA, IB = 0
−50
Collector cutoff current
ICBO
VCB = −50 V, IE = 0
− 0.1
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
IEBO
VEB = −6 V, IC = 0
−2.0
mA
hFE
VCE = −10 V, IC = −100 mA
VCE(sat)
IC = −10 mA, IB = − 0.3 mA
− 0.25
V
− 0.2
V
kΩ
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
High-level output voltage
VOH
VCC = −5 V, VB = − 0.5 V, RL = 500 Ω
Low-level output voltage
VOL
VCC = −5 V, VB = −3.5 V, RL = 500 Ω
V
V
−4.9
V
R1
−30%
0.27
+30%
Resistance ratio
R1/R2
0.043
0.054
0.065
fT
VCB = −10 V, IE = 50 mA, f = 200MHz
µA
20
Input resistance
Transition frequency
2
Symbol
Collector to base voltage
200
MHz
Composite Transistors
XN04390
Common characterisitcs chart
PT  Ta
Total power dissipation PT (mW)
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
Characterisitcs chart of Tr1
Collector current IC (mA)
−200
IB = −1.6 mA
−160
−1.4 mA
−1.2 mA
−120
−1.0 mA
− 0.8 mA
−80
− 0.6 mA
− 0.4 mA
−40
− 0.2 mA
0
0
−2
−4
−6
−8
−10
−12
Collector to emitter saturation voltage VCE(sat) (V)
Ta = 25°C
−10
−3
−1
−0.3
Cob  VCB
−25°C
−0.03
−3
−10
−30
−100 −300 −1 000
Collector current IC (mA)
VCE = 10 V
200
160
Ta = 75°C
120
25°C
80
−25°C
40
0
−1
−3
−10
−30
−100 −300 −1 000
Collector current IC (A)
VIN  IO
VO = − 0.2 V
Ta = 25°C
−30
−10
Input voltage VIN (V)
Cllector output capacitance Cob (pF)
25°C
−100
f = 1MHz
IE = 0
Ta = 25°C
20
Ta = 75°C
−0.1
−0.01
−1
240
IC / IB = 10
−30
Collector to emitter voltage VCE (V)
24
hFE  IC
VCE(sat)  IC
−100
Forward current transfer ratio hFE
IC  VCE
−240
16
12
−3
−1
−0.3
8
−0.1
4
−0.03
0
−1
−3
−10
−30
−100
Collector to base voltage VCB (V)
−0.01
−0.1 −0.3
−1
−3
−10
−30
−100
Output current IO (mA)
3
XN04390
Composite Transistors
Characterisitcs chart of Tr2
IC  VCE
240
Ta = 25°C
IC/IB = 10
200
Ta = 75°C
VCE = 10V
120
0.7 mA
0.6 mA
0.5 mA
80
0.4 mA
0.3 mA
0.2 mA
40
Forward current transfer ratio hFE
IB = 1.0 mA
0.9 mA
0.8 mA
160
Collector to emitter VCE(sat) (V)
30
200
Collector current IC (mA)
hFE  IC
VCE(sat)  IC
100
10
25°C
150
3
1
100
Ta = 75°C
25°C
0.3
0.1
−25°C
0.03
−25°C
50
0.1 mA
0
0
2
4
6
8
10
12
0.01
1
Collector to emitter voltage VCE (V)
3
10
0
1 000
1
3
100
100
1 000
10
Input voltage VIN (V)
30
100
4
30
300
1 000
VIN  IO
VO = 5 V
Ta = 25°C
300
6
10
Collector current IC (mA)
3 000
Output current IO (µA)
Collector output capacitance Cob (pF)
8
30
10
VO = 0.2 V
Ta = 25°C
3
1
0.3
0.1
2
3
0
0.1
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
4
300
IO  VIN
10 000
f = 1MHz
IE = 0
Ta = 25°C
10
100
Collrector current IC (mA)
Cob  VCB
12
30
1
0.4
0.03
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output voltage IO (mA)
100
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2001 MAR