Composite Transistors XN04390 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ■ Features 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor) • Reduction of the mounting area ad assembly cost by one half. 2.8+0.2 –0.3 6 5° 5 1.50+0.25 –0.05 4 0.16+0.10 –0.06 0.4±0.2 For digital circuit For switching 0.30+0.10 –0.05 0.50+0.10 –0.05 1.1+0.2 –0.1 0 to 0.1 • UNR212X (UN212X) + UNR2223 (UN2223) ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current Tr2 IC 500 mA Collector to base voltage VCBO −50 V Collector to emitter voltage VCEO −50 V Collector current IC −500 mA Total power dissipation PT 300 mW Tj 150 °C Tstg −55 to +150 °C Overall Junction temperature Storage temperature 1.1+0.3 –0.1 10° ■ Basic Part Number of Element 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ: SC-74 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Type Package Marking Symbol: DY Internal Connection 6 Tr1 5 4 1 2 Tr2 3 Note) The part number in the parenthesis shows conventional part number. 1 XN04390 Composite Transistors ■ Electorical Caracteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage VCBO IC = 10 µA, IE = 0 50 Collector to emitter voltage VCEO IC = 2 mA, IB = 0 50 Collector cutoff current ICBO VCB = 50 V, IE = 0 1 ICEO VCE = 50 V, IB = 0 1 µA IEBO VEB = 6 V, IC = 0 1 mA hFE VCE = 10 V, IC = 100 mA VCE(sat) IC = 100 mA, IB = 5 mA 0.25 V Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High-level output voltage VOH VCC = 5 V, VB = 0.5 V, RL = 500 Ω Low-level output voltage VOL VCC = 5 V, VB = 3.5 V, RL = 500 Ω V V 60 4.9 V 0.2 V kΩ Input resistance R1 −30% 10 +30% Resistance ratio R1/R2 0.8 1.0 1.2 Transition frequency fT µA VCB = 10 V, IE = −50 mA, f = 200MHz 200 MHz • Tr2 Parameter Conditions Min Typ Max Unit VCBO IC = −10 µA, IE = 0 −50 Collector to emitter voltage VCEO IC = −2 mA, IB = 0 −50 Collector cutoff current ICBO VCB = −50 V, IE = 0 − 0.1 ICEO VCE = −50 V, IB = 0 − 0.5 µA IEBO VEB = −6 V, IC = 0 −2.0 mA hFE VCE = −10 V, IC = −100 mA VCE(sat) IC = −10 mA, IB = − 0.3 mA − 0.25 V − 0.2 V kΩ Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High-level output voltage VOH VCC = −5 V, VB = − 0.5 V, RL = 500 Ω Low-level output voltage VOL VCC = −5 V, VB = −3.5 V, RL = 500 Ω V V −4.9 V R1 −30% 0.27 +30% Resistance ratio R1/R2 0.043 0.054 0.065 fT VCB = −10 V, IE = 50 mA, f = 200MHz µA 20 Input resistance Transition frequency 2 Symbol Collector to base voltage 200 MHz Composite Transistors XN04390 Common characterisitcs chart PT Ta Total power dissipation PT (mW) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) Characterisitcs chart of Tr1 Collector current IC (mA) −200 IB = −1.6 mA −160 −1.4 mA −1.2 mA −120 −1.0 mA − 0.8 mA −80 − 0.6 mA − 0.4 mA −40 − 0.2 mA 0 0 −2 −4 −6 −8 −10 −12 Collector to emitter saturation voltage VCE(sat) (V) Ta = 25°C −10 −3 −1 −0.3 Cob VCB −25°C −0.03 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) VCE = 10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (A) VIN IO VO = − 0.2 V Ta = 25°C −30 −10 Input voltage VIN (V) Cllector output capacitance Cob (pF) 25°C −100 f = 1MHz IE = 0 Ta = 25°C 20 Ta = 75°C −0.1 −0.01 −1 240 IC / IB = 10 −30 Collector to emitter voltage VCE (V) 24 hFE IC VCE(sat) IC −100 Forward current transfer ratio hFE IC VCE −240 16 12 −3 −1 −0.3 8 −0.1 4 −0.03 0 −1 −3 −10 −30 −100 Collector to base voltage VCB (V) −0.01 −0.1 −0.3 −1 −3 −10 −30 −100 Output current IO (mA) 3 XN04390 Composite Transistors Characterisitcs chart of Tr2 IC VCE 240 Ta = 25°C IC/IB = 10 200 Ta = 75°C VCE = 10V 120 0.7 mA 0.6 mA 0.5 mA 80 0.4 mA 0.3 mA 0.2 mA 40 Forward current transfer ratio hFE IB = 1.0 mA 0.9 mA 0.8 mA 160 Collector to emitter VCE(sat) (V) 30 200 Collector current IC (mA) hFE IC VCE(sat) IC 100 10 25°C 150 3 1 100 Ta = 75°C 25°C 0.3 0.1 −25°C 0.03 −25°C 50 0.1 mA 0 0 2 4 6 8 10 12 0.01 1 Collector to emitter voltage VCE (V) 3 10 0 1 000 1 3 100 100 1 000 10 Input voltage VIN (V) 30 100 4 30 300 1 000 VIN IO VO = 5 V Ta = 25°C 300 6 10 Collector current IC (mA) 3 000 Output current IO (µA) Collector output capacitance Cob (pF) 8 30 10 VO = 0.2 V Ta = 25°C 3 1 0.3 0.1 2 3 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) 4 300 IO VIN 10 000 f = 1MHz IE = 0 Ta = 25°C 10 100 Collrector current IC (mA) Cob VCB 12 30 1 0.4 0.03 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output voltage IO (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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