Transistors with built-in Resistor UNR2221/2222/2223/2224 (UN2221/2222/2223/2224) Silicon NPN epitaxial planer transistor Unit : mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 5˚ ■ Features 2.8+0.2 –0.3 1.50+0.25 –0.05 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number 1.1+0.3 –0.1 1.1+0.2 –0.1 (R2) 2.2 kΩ 4.7 kΩ 10 kΩ 10 kΩ 0 to 0.1 • UNR2221 • UNR2222 • UNR2223 • UNR2224 10˚ Marking Symbol (R1) (UN2221) 9A 2.2 kΩ (UN2222) 9B 4.7 kΩ (UN2223) 9C 10 kΩ (UN2224) 9D 2.2 kΩ ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector to base voltage Parameter VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 500 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection R1 C B R2 E ■ Electrical Characteristics Ta = 25°C Parameter Collector cutoff current Emitter UNR2221 cutoff UNR2222 current UNR2223/2224 Symbol Conditions Min Typ Max Unit µA ICBO VCB = 50 V, IE = 0 1 ICEO VCE = 50 V, IB = 0 1 IEBO VEB = 6 V, IC = 0 5 mA 2 1 Collector to base voltage VCBO IC = 10 µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2 mA, IB = 0 50 V VCE = 10 V, IC = 100 mA 40 Forward UNR2221 current UNR2222 hFE 50 transfer ratio UNR2223/2224 Collector to emitter saturation voltage 60 VCE(sat) IC = 100 mA, IB = 5 mA Output voltage high level VOH VCC = 5 V, VB = 0.5 V, RL = 500 Ω Output voltage low level VOL VCC = 5 V, VB = 3.5 V, RL = 500 Ω 0.25 4.9 V V 0.2 V Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2002 SJH00012BED 1 UNR2221/2222/2223/2224 ■ Electrical Characteristics (continued) Ta = 25°C Parameter Symbol Conditions Transition frequency fT VCB = 10 V, IE = −50 mA, f = 200 MHz Input R1 UNR2221/2224 Min Typ Unit 200 −30% UNR2222 4.7 tance UNR2223 10 R1/R2 MHz +30% 2.2 resis- Resistance ratio Max 0.8 1.0 UNR2224 kΩ 1.2 0.22 Common characteristics chart PT T a Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) Characteristics charts of UNR2221 Ta = 25˚C Collector current IC (mA) 250 0.9 mA 0.8 mA 200 0.7mA 0.6 mA 150 0.5 mA 100 0.4 mA 0.3mA 50 0.2mA 0 0 2 4 6 8 0.1mA 10 12 Collector to emitter voltage VCE (V) 2 100 hFE IC 400 IC / IB = 10 VCE = 10 V 30 Forward current transfer ratio hFE IB = 1.0 mA VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) IC VCE 300 10 3 1 Ta = 75°C 0.3 25°C 0.1 0.03 300 Ta = 75°C 200 25°C 100 −25°C −25°C 0.01 1 3 10 30 100 300 Collector current IC (mA) SJH00012BED 1 000 0 1 3 10 30 100 300 Collector current IC (mA) 1 000 UNR2221/2222/2223/2224 Cob VCB IO VIN 16 15 8 100 VO = 5 V Ta = 25°C 3 000 30 1 000 10 Input voltage VIN (V) 20 VIN IO 10 000 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance Cob (pF) 24 300 100 30 VO = 0.2 V Ta = 25°C 3 1 0.3 10 0.1 3 0.03 4 0 0.1 0.3 1 3 10 30 1 0.4 100 Collector to base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2222 IB = 1.0 mA 0.9 mA 0.8 mA 200 0.7 mA 0.6 mA 150 0.5 mA 100 0.4 mA 0.3 mA 50 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 100 10 3 1 Ta = 75°C 0.3 25°C 0.1 −25°C 0.03 0.01 1 3 10 100 300 25°C −25°C 100 50 0 1 000 1 3 8 6 4 30 100 300 1 000 VIN IO 100 VO = 5 V Ta = 25°C 3 000 30 1 000 10 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) IO VIN 10 000 Output current IO (µA) Collector output capacitance Cob (pF) 30 Ta = 75°C 150 Collector current IC (mA) Cob VCB 10 VCE = 10 V 30 Collector to emitter voltage VCE (V) 12 hFE IC 200 IC / IB = 10 Forward current transfer ratio hFE Ta = 25˚C 250 Collector current IC (mA) VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) IC VCE 300 300 100 30 VO = 0.2 V Ta = 25°C 3 1 0.3 10 0.1 3 0.03 2 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00012BED 1.4 0.01 0.1 0.3 1 3 10 30 100 Output current IO (mA) 3 UNR2221/2222/2223/2224 Characteristics charts of UNR2223 VCE(sat) IC Collector current IC (mA) 200 IB = 1.0 mA 0.9 mA 0.8 mA 160 120 0.7mA 0.6 mA 0.5 mA 80 0.4 mA 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 100 10 3 1 Ta = 75°C 25°C 0.3 0.1 −25°C 0.03 0.01 12 1 3 10 100 300 100 −25°C 50 0 1 000 1 10 3 6 4 100 300 1 000 VIN IO 100 VO = 5 V Ta = 25°C 3 000 30 1 000 10 Input voltage VIN (V) 8 30 Collector current IC (mA) IO VIN 10 000 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance Cob (pF) 30 25°C Ta = 75°C 150 Collector current IC (mA) Cob VCB 10 VCE = 10 V 30 Collector to emitter voltage VCE (V) 12 hFE IC 200 IC / IB = 10 Forward current transfer ratio hFE Ta = 25˚C Collector to emitter saturation voltage VCE(sat) (V) IC VCE 240 300 100 30 10 VO = 0.2 V Ta = 25°C 3 1 0.3 0.1 2 3 0 0.1 0.3 1 3 10 30 0.03 1 0.4 100 0.6 0.8 1.0 1.2 Input voltage VIN Collector to base voltage VCB (V) 1.4 0.01 0.1 (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UNR2224 VCE(sat) IC Collector current IC (mA) 250 IB = 1.0 mA 200 150 0.9 mA 0.8 mA 0.7mA 100 0.6 mA 0.5 mA 0.4 mA 0.3mA 0.2mA 50 0.1mA 0 0 2 4 6 8 10 12 Collector to emitter voltage VCE (V) 4 100 hFE IC 200 IC / IB = 10 30 10 3 1 VCE = 10 V Forward current transfer ratio hFE Ta = 25˚C Collector to emitter saturation voltage VCE(sat) (V) IC VCE 300 Ta = 75°C 0.3 25°C 0.1 Ta = 75°C 25°C 150 −25°C 100 50 −25°C 0.03 0 0.01 1 3 10 30 100 300 Collector current IC (mA) SJH00012BED 1 000 1 3 10 30 100 300 Collector current IC (mA) 1 000 UNR2221/2222/2223/2224 Cob VCB IO VIN 10 000 10 8 5 4 VIN IO 1 000 VO = 5 V Ta = 25°C 3 000 300 1 000 100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance Cob (pF) 12 300 100 30 VO = 0.2 V Ta = 25°C 30 10 3 10 1 3 0.3 2 0 0.1 0.3 1 3 10 30 Collector to base voltage VCB 100 (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00012BED 1.4 0.1 0.1 0.3 1 3 10 30 100 Output current IO (mA) 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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