PL IA N T Features Bourns® Model P850-G Series TBU® HSPs are not recommended for POTS applications. This series is suited for applications requiring a dual bidirectional device where 50 ohms of series resistance is acceptable. For new SLIC applications, we recommend that customers evaluate our TBU-PL Series. CO M ■ Extremely high speed performance *R oH S ■ Blocks high voltages and currents ■ Two TBU® protectors in one small package ■ Simple, superior circuit protection ■ Minimal PCB area ■ RoHS compliant*, UL Recognized P850-G Series Dual TBU® High-Speed Protectors Transient Blocking Units - TBU® Devices Bourns® Model P850-G TBU® products are dual high-speed bidirectional protection components, constructed using MOSFET semiconductor technology, designed to protect against faults caused by short circuits, AC power cross, induction and lightning surges. Agency Approval UL recognized component File # E315805. Industry Standards Description The TBU® high speed protector, triggering as a function of the MOSFET, blocks surges and provides an effective barrier behind which sensitive electronics are not exposed to large voltages or currents during surge events. The TBU® device is provided in a surface mount DFN package and meets industry standard requirements such as RoHS and Pb Free solder reflow profiles. Model Telcordia GR-1089 ITU-T K.20, K.20E, K.21, K.21E, K.45 Port Type 3, 5 P850-G P850-G Absolute Maximum Ratings (Tamb = 25 °C) Symbol Parameter Value Unit Vimp Maximum protection voltage for impulse faults with rise time ≥ 1 µsec 850 V Vrms Maximum protection voltage for continuous Vrms faults 425 V Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -65 to +150 °C Electrical Characteristics (Tamb = 25 °C) Symbol Parameter Model Min. Typ. Max. Unit Iop Maximum current through the device that will not cause current blocking P850-G120-WH P850-G200-WH 100 200 mA Itrigger Typical current for the device to go from normal operating state to protected state P850-G120-WH P850-G200-WH Iout Maximum current through the device P850-G120-WH P850-G200-WH Rdevice Series resistance of the TBU® device Rbal Line-to line series resistance difference between two TBU® devices tblock Maximum time for the device to go from normal operating state to protected state Iquiescent Current through the triggered TBU® device with 50 Vdc circuit voltage 0.7 mA Vreset Voltage below which the triggered TBU® device will transition to normal operating state 22 V 150 275 50 The P-G series TBU® devices are bidirectional; specifications are valid in both directions. *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. mA 200 400 mA 55 Ω 2 Ω 1 µs Applications ■ Sensor protection ■ Signal line protection P850-G Series Dual TBU® High-Speed Protectors Typical Performance Characteristics Time to Block vs. Fault Current V-I Characteristics 1 +I Itrigger -Vreset +V Vreset Time to Block (sec) 0.1 0.01 0.001 0.0001 0.00001 0.000001 0.0000001 0.1 1 10 100 1000 Fault Current (A) -Itrigger Trigger Current Temperature 140 % of Trigger Current 120 100 80 60 40 20 -40 -20 0 20 40 60 80 Temperature (°C) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. P850-G Series Dual TBU® High-Speed Protectors Operational Characteristics The graphs below demonstrate the operational characteristics of the TBU® device. For each graph the fault voltage, protected side voltage, and current is presented. V2 V1 Equipment Tip Pxxx-G TEST CONFIGURATION DIAGRAM Ring P850-G Power Fault, 230 Vrms, 25 A P850-G Lightning, 850 V 3 200 mA/div. 2 100 V/div. 200 mA/div. 3 2 1 1 1 µs/div. Ch1 V1 Ch2 V2 Ch3 Current 4 ms/div. Ch1 V1 Ch2 V2 Ch3 Current Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. P850-G Series Dual TBU® High-Speed Protectors Product Dimensions J J H B K F A 4A XXXXX YWWLL C PIN 1 4 5 F D 6 M A 6A A1 G G 3A A1 TOP VIEW E D Dim. H K 3 2 1 1A C SEATING PLANE SIDE VIEW B L M D BOTTOM VIEW Pads 1A and 1 are internally connected; the same for pads 3A with 3, 4A with 4, and 6A with 6. This allows for one PCB layout to accommodate the Model P850. E F Recommended Pad Layout 1.225 (.048) 1.25 (.049) 0.85 (.033) 1.15 (.045) 0.375 (.015) 0.30 (.012) 0.75 (.030) G Pad # 1A 1 2 3 3A Pad Designation Apply Pad # Apply Tip In 4A Ring Out Tip In 4 Ring Out NC 5 NC Tip Out 6 Ring In Tip Out 6A Ring In NC = Solder to PCB; do not make electrical connection, do not connect to ground. TBU® devices have matte-tin termination finish. Suggested layout should use non-solder mask define (NSMD). Recommended stencil thickness is 0.10-0.12 mm (.004-.005 in.) with stencil opening size 0.025 mm (.0010 in.) less than the device pad size. As when heat sinking any power device, it is recommended that, wherever possible, extra PCB copper area is allowed. For minimum parasitic capacitance, do not allow any signal, ground or power signals beneath any of the pads of the device. Thermal Resistances Part # Symbol P850-G Rth(j-a) Parameter Value Unit Junction to leads (package) 119 °C/W ® 215 °C/W Junction to leads (per TBU device) H J K L M Min. 0.80 (.031) 0.00 (.000) 8.15 (.321) 3.90 (0.154) 1.15 (.045) 1.05 (.041) 0.725 (.029) 1.10 (.043) 0.375 (.015) 0.25 (.010) 0.70 (.028) 0.70 (.028) 0.375 (.015) DIMENSIONS: P850-G Typ. 0.90 (.035) 0.025 (.001) 8.25 (.325) 4.00 (0.157) 1.25 (.049) 1.15 (.045) 0.825 (.032) 1.20 (.047) 0.425 (.017) 0.30 (.012) 0.75 (.030) 0.75 (.030) 0.425 (.017) Max. 1.00 (.039) 0.05 (.002) 8.35 (.329) 4.10 (0.161) 1.35 (.053) 1.25 (.049) 0.925 (.036) 1.30 (.051) 0.475 (.019) 0.35 (.014) 0.80 (.031) 0.80 (.031) 0.475 (.018) MM (INCHES) Block Diagram 6 & 6A 4 & 4A 1 & 1A 3 & 3A Reflow Profile Profile Feature Average Ramp-Up Rate (Tsmax to Tp) Preheat - Temperature Min. (Tsmin) - Temperature Max. (Tsmax) - Time (tsmin to tsmax) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5 °C of Actual Peak Temp. (tp) Ramp-Down Rate Time 25 °C to Peak Temperature Pb-Free Assembly 3 °C/sec. max. 150 °C 200 °C 60-180 sec. 217 °C 60-150 sec. 260 °C 20-40 sec. 6 °C/sec. max. 8 min. max. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. ® 3312 -Series 2 mmDual SMD Potentiometer P850-G TBUTrimming High-Speed Protectors How to Order Typical Part Marking P 850 - G 120 - WH MANUFACTURER’S TRADEMARK Form Factor P = Two TBU® protectors in one device XXXXX YWWLL Impulse Voltage Rating 850 = 850 V 5 DIGIT PRODUCT CODE: • 1ST DIGIT INDICATES PRODUCT FAMILY. 8 = P850-G SERIES • 2ND & 3RD DIGITS INDICATE IMPULSE VOLTAGE. • 4TH & 5TH DIGITS INDICATE TRIGGER CURRENT. Directional Indication for Paired Devices G = Bidirectional Iop Indicator 120 = 100 mA 200 = 200 mA PIN 1 MANUFACTURING DATE CODE: • 1ST DIGIT INDICATES THE YEAR. • 2ND & 3RD DIGITS INDICATE THE WEEK NUMBER. • 4TH & 5TH DIGITS INDICATE LOT CODE. Packaging Specifications (per EIA468-B) P0 E D t B P2 TOP COVER TAPE A N F W C D B0 K0 CENTER LINES OF CAVITY A0 P D1 EMBOSSMENT G (MEASURED AT HUB) USER DIRECTION OF FEED QUANTITY: 3000 PIECES PER REEL A Min. 326 (12.835) B Max. 330.25 (13.002) Min. 1.5 (.059) A0 Min. 4.2 (.165) B0 Max. 4.4 (.173) Min. 8.45 (.333) K0 Min. 1.1 (.043) C Max. 2.5 (.098) Min. 7.9 (.311) D Max. 13.5 (.531) D Max. 8.65 (.341) Min. 1.5 (.059) P Max. 1.3 (.051) Min. 12.8 (.504) Min. 1.5 (.059) Min. 3.9 (.159) E Max. - Min. 1.65 (.065) P2 Max. 4.1 (.161) DIMENSIONS: Min. 1.9 (.075) G Ref. 16.5 (.650) Max. D1 Max. 1.6 (.063) P0 Max. 8.1 (.319) Min. 20.2 (.795) F Max. 1.85 (.073) Min. 7.4 (.291) Max. 0.35 (.014) Min. 15.7 (.618) t Max. 2.1 (.083) Min. 0.25 (.010) N Ref. 102 (4.016) max. 7.6 (.299) W MM (INCHES) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Max. 16.3 (.642) P850-G Series Dual TBU® High-Speed Protectors Reference Designs A cost-effective protection solution combines the Bourns® TBU® protection device with a pair of MOVs or Bourns® GDTs and a diode bridge. The diagram below illustrates a common configuration of these components. The graphs to the right demonstrate the operational characteristics of the circuit. V1 Equipment For new SLIC applications, we recommend that customers evaluate our new TBU-PL series. V2 -V REF MOVs or GDTs Pxxx-G Common Configuration Diagram P850-G Configuration (ITU-T K.20, K.21, K.20E, K.21E, K.45) Part Number Source TBU Device 1 P850-G120-WH Bourns, Inc. MOV 2 MOV-10D361K Bourns, Inc. Diode bridge 2 GSD2004S-V MMBD2004S Vishay Diodes Inc. 3 400 mA/div. Qty. ® 100 V/div. Product 2 1 500 ns/div. Ch1 V1 Ch2 V2 Ch3 Current P850-G Solution: 4000 V Lightning 10/700 µsec, 100 A Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com REV. 09/15 “TBU” is a registered trademark of Bourns, Inc. in the United States and other countries. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.