Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 3.0±0.2 4.0±0.2 ■ Features Parameter (Ta=25˚C) Symbol Collector to 2SD1423 base voltage 2SD1423A Collector to 2SD1423 Ratings 30 VCBO 25 1 V 50 Emitter to base voltage VEBO 7 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics marking V 60 VCEO emitter voltage 2SD1423A Unit 2 3 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 0.1 µA ICEO VCE = 20V, IB = 0 1 µA VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 7 hFE1*1 VCE = 10V, IC = 150mA*2 85 hFE2 VCE = 10V, IC = 500mA*2 40 Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA*2 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Collector cutoff current Collector to base 2SD1423 voltage 2SD1423A Collector to emitter 2SD1423 voltage 2SD1423A Emitter to base voltage Forward current transfer ratio 30 V 60 25 V 50 V 340 0.6 200 MHz 15 6 *2 *1h FE1 V pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 Transistor 2SD1423, 2SD1423A IC — VCE 1000 400 Collector current IC (mA) 300 200 100 800 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 600 400 3mA 2mA 200 1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.3 1 3 10 Collector current IC (A) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 8 6 4 2 0 3 10 10 3 1 Ta=75˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 10 160 VCB=10V Ta=25˚C 250 Ta=75˚C 200 150 3 Collector current IC (A) fT — I E 25˚C –25˚C 100 50 140 120 100 80 60 40 20 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 1 30 VCE=10V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.1 12 300 IC/IB=10 0.01 0.01 0.03 10 IC/IB=10 hFE — IC 100 1 8 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 3 6 Transition frequency fT (MHz) Collector power dissipation PC (mW) Ta=25˚C 0 2 VCE(sat) — IC 1200 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 500 10 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100