Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 5.0±0.2 Low noise voltage NV. High foward current transfer ratio hFE. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 55 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 0.45 –0.1 1.27 1.27 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Conditions Symbol Collector cutoff current +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 min typ max Unit ICBO VCB = 10V, IE = 0 1 100 nA ICEO VCE = 10V, IB = 0 0.01 1 µA Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 55 V Emitter to base voltage VEBO IE = 10µA, IC = 0 Forward current transfer ratio hFE* VCE = 5V, IC = 2mA Collector to emitter saturation voltage VCE(sat) ICE = 100mA, IB = 10mA Base to emitter voltage VBE VCE = 1V, IC = 30mA Transition frequency fT VCB = 5V, IE = –2mA, f = 200MHz NV Noise voltage *h FE VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 7 V 180 700 0.6 V 1 V 200 MHz 150 mV Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 1 2SC2634 Transistor PC — Ta IC — VCE 120 IB=400µA 350µA Ta=25˚C 200 100 80 200µA 60 150µA 100µA 40 50µA 20 80 120 160 200 Ambient temperature Ta (˚C) 2 4 10 3 1 0.3 Ta=75˚C 25˚C –25˚C 0.01 0.1 0.3 1 3 6 8 10 40 12 0 0.4 0.8 10 30 600 Ta=75˚C 400 25˚C –25˚C 200 VCB=5V Ta=25˚C 350 300 250 200 150 100 50 Collector current IC (mA) 0.3 1 3 10 30 0 –1 100 Collector current IC (mA) Cob — VCB NF — IE –100 5 4 f=100Hz 2 1kHz 2 VCE=10V GV=80dB Function=FLAT 100 Noise voltage NV (mV) 6 3 –30 NV — IC VCE=5V Rg=1kΩ Ta=25˚C 7 Noise figure NF (dB) –10 120 8 4 –3 Emitter current IE (mA) 8 IE=0 f=1MHz Ta=25˚C 2.0 400 800 0 0.1 10 1.6 fT — I E VCE=5V 100 6 1.2 Base to emitter voltage VBE (V) 1000 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 0.03 60 hFE — IC IC/IB=10 0.1 80 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 –25˚C 0 0 Transition frequency fT (MHz) 40 Ta=75˚C 20 0 0 Collector output capacitance Cob (pF) 100 Collector current IC (mA) 300 250µA VCE=5V 25˚C 300µA 100 400 0 80 Rg=100kΩ 60 22kΩ 40 5kΩ 20 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 IC — VBE 120 Collector current IC (mA) Collector power dissipation PC (mW) 500 0 –10 10kHz –30 –100 –300 Emitter current IE (µA) –1000 0 0.01 0.03 0.1 0.3 Collector current IC (mA) 1