Transistor 2SD1199 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 ■ Absolute Maximum Ratings Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1.0 4.5±0.1 0.45±0.05 2 1 2.5 1:Base 2:Collector 3:Emitter 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Symbol Collector cutoff current 0. 7 3 Symbol Parameter 0.55±0.1 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.85 4.1±0.2 ● 2.4±0.2 2.0±0.2 3.5±0.1 ● 1.25±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 100 nA 1 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 40 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V Forward current transfer ratio hFE * VCE = 10V, IC = 2mA 400 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.05 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 120 MHz 80 mV Noise voltage *h FE VCE = 10V, IC = 1mA, GV = 80dB NV Rg = 100kΩ, Function = FLAT 2000 0.2 V Rank classification Rank R hFE 400 ~ 800 S T 600 ~ 1200 1000 ~ 2000 1 Transistor 2SD1199 PC — Ta IC — VCE 120 200 100 120 IB=100µA 90µA 80µA 70µA 60µA 100 80 50µA 60 40µA 30µA 40 20µA 20 Collector current IC (mA) 300 60 80 100 120 140 160 2 4 6 8 10 12 1800 Forward current transfer ratio hFE 1 0.3 Ta=75˚C 25˚C –25˚C 0.03 10 30 Ta=75˚C 900 25˚C –25˚C 600 300 0 0.1 100 Collector current IC (mA) 0.3 Cob — VCB 1 3 IE=0 f=1MHz Ta=25˚C Noise voltage NV (mV) 5 4 3 2 80 10 30 150 100 50 0 – 0.1 – 0.3 100 –1 –3 1 3 10 30 100 Collector to base voltage VCB (V) –100 NV — VCE Rg=100kΩ Rg=100kΩ 60 22kΩ 40 5kΩ 20 80 60 22kΩ 40 5kΩ 20 IC=1mA GV=80dB Function=FLAT Ta=25˚C 0 0.03 –30 100 VCE=10V GV=80dB Function=FLAT Ta=25˚C 0 0.01 –10 Emitter current IE (mA) 1 0 2.0 200 NV — IC 100 6 1.6 VCB=10V Ta=25˚C Collector current IC (mA) 8 7 1.2 250 Noise voltage NV (mV) 3 0.8 VCE=10V 1200 3 1 0.4 Base to emitter voltage VBE (V) fT — I E 1500 10 0.3 0 hFE — IC 30 0.01 0.1 40 Collector to emitter voltage VCE (V) IC/IB=10 0.1 60 0 0 VCE(sat) — IC 100 –25˚C 20 Transition frequency fT (MHz) 40 Ta=75˚C 80 10µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 100 400 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 140 0 2 IC — VBE 160 Collector current IC (mA) Collector power dissipation PC (mW) 500 0.1 0.3 Collector current IC (mA) 1 1 3 10 30 100 Collector to emitter voltage VCE (V)