PANASONIC LN69

Infrared Light Emitting Diodes
LN69
GaAs Infrared Light Emitting Diode
Unit : mm
Emitted light spectrum suited for silicon photodetectors :
λP = 940 nm (typ.)
Good radiant power output linearity with respect to input current
Long lifetime, high reliability
ø3 plastic package
15.5±1.0
1.0
4.5±0.3
Features
High-power output, high-efficiency : Ie = 3.5 mW/sr (min.)
5.5±0.2
1.0
For optical control systems
Not soldered 2.0 max.
ø3.6±0.2
ø3.0±0.2
2-0.8 max.
2-0.5±0.1
2
(1.5)
Parameter
Symbol
ratings
Unit
PD
75
mW
Forward current (DC)
IF
50
mA
Pulse forward current
IFP*
1
A
Power dissipation
*
2.54
1.6
Absolute Maximum Ratings (Ta = 25˚C)
0.5±0.1
1
Reverse voltage (DC)
VR
3
V
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
– 40 to +100
˚C
1: Anode
2: Cathode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max
3.5
Unit
Cente radiant Intensity
Ie
IF = 20mA
Peak emission wavelength
λP
IF = 50mA
mW/sr
Spectral half band width
∆λ
IF = 50mA
50
Forward voltage (DC)
VF
IF = 50mA
1.3
Reverse current (DC)
IR
VR = 3V
Capacitance between pins
Ct
VR = 0V, f = 1MHz
35
pF
Half-power angle
θ
The angle in which radiant intencity is 50%
15
deg.
940
nm
nm
1.5
V
10
µA
1
LN69
Infrared Light Emitting Diodes
IF — Ta
IFP — Duty cycle
10 2
tw = 10µs
Ta = 25˚C
Ta = 25˚C
20
IF (mA)
Pulse forward current
30
10
Forward current
50
40
Allowable forward current
IF — VF
80
70
IFP (A)
IF (mA)
60
1
10 –1
60
50
40
30
20
10
10
20
40
60
80
10 –2
10 –1
100
1
Ambient temperature Ta (˚C )
∆Ie — IFP
10 –1
10 –2
10 –1
1.2
10mA
0.8
0.4
0
– 40
1
Pulse forward current IFP (A)
λP — Ta
1000
0
40
120
10 2
10
– 20
0
20
40
940
920
60
80
Spectral characteristics
Directivity characteristics
0˚
IF = 50mA
Ta = 25˚C
80
80
70
60
60
50
40
40
30
20
20
10˚
20˚
100
90
Relative radiant intensity (%)
Peak emission wavelength λP (nm)
80
IF = 50mA
Ambient temperature Ta (˚C )
IF = 50mA
960
1.6
Ambient temperature Ta (˚C )
100
980
1.2
∆Ie — Ta
1mA
(2)
0.8
10 3
IF = 50mA
(1)
VF (V)
10
10 –2
10 –3
0.4
VF — Ta
(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C
1
0
Forward voltage VF (V)
1.6
Forward voltage
Relative radiant intensity ∆Ie
10 2
0
10 2
10
Duty cycle (%)
Relative radiant intensity (%)
0
Relative radiant intensity ∆Ie
0
– 25
30˚
40˚
50˚
60˚
70˚
80˚
90˚
900
– 40
0
40
80
Ambient temperature Ta (˚C )
2
120
0
860
900
940
980
1020 1060 1100
Wavelength λ (nm)