Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 45° ■ Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.0–0.20 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 ■ Features 0.5±0.08 1.5±0.1 (Ta=25˚C) 0.4±0.04 3.0±0.15 Parameter Symbol Ratings Unit Collector to base voltage VCBO –10 V Collector to emitter voltage VCEO –10 V Emitter to base voltage VEBO –7 V Peak collector current ICP –2.4 A Collector current IC –2 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 3 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ SC–62 Mini Power Type Package Marking symbol : 2F Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Conditions min typ max Unit –1 µA Collector cutoff current ICBO VCB = –7V, IE = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –10 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –10 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V 200 Forward current transfer ratio hFE VCE = –2V, IC = 200mA Collector to emitter saturation voltage VCE(sat) IC = –1A, IB = –10mA 800 Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz 60 MHz Collector output capacitance Cob VCB = –6V, IE = 0, f = 1MHz 100 pF – 0.19 – 0.25 V 1 Transistor 2SB1612 PC — Ta IC — VCE Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 –1.0 0.6 –2.5mA –2.0mA –1.5mA – 0.4 0.4 –1.0mA – 0.2 0.2 – 0.5mA 60 80 100 120 140 160 –100 Forward current transfer ratio hFE –3 –1 Ta=75˚C 25˚C – 0.1 –25˚C – 0.03 –1 –3 –10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 160 120 80 40 0 –1 –3 –10 –2.0 –2.4 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –30 240 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 – 0.01 – 0.03 – 0.1 – 0.3 –100 Collector to base voltage VCB (V) –1.2 Base to emitter voltage VBE (V) fT — I E VCB=–6V f=200MHz Ta=25˚C 200 160 120 80 40 0 –1 –3 Collector current IC (A) Cob — VCB 200 –1.6 VCE=–2V –10 240 – 0.4 – 0.8 –1.2 600 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1.0 hFE — IC IC/IB=100 – 0.3 –1.5 Collector to emitter voltage VCE (V) VCE(sat) — IC –25˚C –2.0 0 0 Transition frequency fT (MHz) 40 25˚C Ta=75˚C – 0.5 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) IB=–3.0mA – 0.6 0 Collector output capacitance Cob (pF) –2.5 – 0.8 0.8 VCE=–2V Ta=25˚C 0 2 –3.0 Collector current IC (A) 1.2 IC — VBE –1.2 Collector current IC (A) Collector power dissipation PC (W) 1.4 –10 1 3 10 30 Emitter current IE (mA) 100