Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1440 Unit: mm * (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Peak collector current ICP 4 A Collector current IC 3 A 1 W 150 ˚C –55 ~ +150 ˚C * Junction temperature Tj Storage temperature Tstg 0.4±0.04 3.0±0.15 Parameter PC 1.0–0.2 0.5±0.08 1.5±0.1 ■ Absolute Maximum Ratings Collector power dissipation +0.1 0.4±0.08 2.5±0.1 45° +0.25 0.4max. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.0–0.20 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 3 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1H Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 0.1 µA Collector cutoff current ICBO VCB = 20V, IE = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V hFE1 *1 VCE = 2V, IC = 200mA 120 hFE2 VCE = 2V, IC = 1.0A 80 Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 50mA 0.15 0.3 V Base to emitter saturation voltage VBE(sat) IC = 1A, IB = 50mA 0.82 1.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 110 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHZ 23 Forward current transfer ratio 340 MHz 35 *2 *1h FE1 pF Pulse measurement Rank classification Rank R S hFE1 120 ~ 240 170 ~ 340 Marking Symbol 1HR 1HS 1 2SD2185 Transistor IC — VCE 1.0 0.8 0.6 0.4 Ta=25˚C 100 Collector current IC (mA) 0.2 IB=400µA 350µA 80 300µA 60 250µA 200µA 40 150µA 100µA 20 50µA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 10 25˚C Ta=–25˚C 100˚C 0.3 0.1 0.03 0.3 1 3 10 Collector current IC (A) Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 50 40 30 20 10 0 1 3 10 1 Ta=75˚C 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.003 0.001 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 Collector current IC (A) fT — I E 240 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Cob — VCB 60 12 3 VCE=2V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.1 10 300 IC/IB=50 0.01 0.01 0.03 8 IC/IB=50 hFE — IC 100 1 6 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 3 4 VCB=10V Ta=25˚C Transition frequency fT (MHz) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 120 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 10 200 160 120 80 40 0 –1 –3 –10 –30 Emitter current IE (mA) –100