Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2185 Unit: mm 45° * 0.5±0.08 1.5±0.1 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Peak collector current ICP –3 A Collector current IC –2 A Collector power dissipation PC 1* W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 0.4±0.04 3.0±0.15 Parameter 1cm2 1.0–0.2 ■ Absolute Maximum Ratings +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.0–0.20 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 ■ Features 3 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1I or more, and the board (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V VCE = –2V, IC = –200mA 120 VCE = –2V, IC = –1A 60 hFE1 Forward current transfer ratio * hFE2 340 Collector to emitter saturation voltage VCE(sat) IC = –1A, IB = –50mA – 0.2 – 0.3 V Base to emitter saturation voltage VBE(sat) IC = –1A, IB = –50mA – 0.85 –1.2 V Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 80 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 45 *h FE1 MHz 60 pF Rank classification Rank R S hFE1 120 ~ 240 170 ~ 340 1 Transistor 2SB1440 PC — Ta IC — VCE 1.2 1.0 0.8 0.6 0.4 Ta=25˚C 600µA –80 500µA –60 20 40 60 200µA 80 100 120 140 160 100µA 0 Ambient temperature Ta (˚C) –4 –6 –8 –10 –12 25˚C Ta=–25˚C 75˚C – 0.3 – 0.1 – 0.03 –1 –3 –10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 80 60 40 20 –10 –30 300 25˚C Ta=75˚C 100 –25˚C 30 10 –25˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –100 Collector to base voltage VCB (V) –1 –3 –10 Collector current IC (A) VCB=–10V f=200MHz Ta=25˚C 200 160 120 80 40 3 1 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) Cob — VCB –3 Ta=75˚C 25˚C – 0.1 Transition frequency fT (MHz) –3 100 –1 240 1000 –10 120 –3 – 0.3 VCE=–2V 3000 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –10 fT — I E 10000 Forward current transfer ratio hFE IC/IB=20 –1 –30 hFE — IC –100 0 –1 –2 IC/IB=20 Collector to emitter voltage VCE (V) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 300µA –40 0 0 Collector output capacitance Cob (pF) 400µA –20 0.2 0 2 IB=700µA –100 Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. VCE(sat) — IC –100 –120 Collector current IC (mA) Collector power dissipation PC (W) 1.4 –10 1 3 10 30 Emitter current IE (mA) 100