R LL4151 SMALL SIGNAL SWITCHING DIODE S E M I C O N D U C T O R FEATURES MiniMelf Silicon epitaxial planar diode Fast switching diode 500mW power dissipation JF This diode is also available in the DO-35 case with the type 0.063(1.6) 0.055(1.4) designation 1N4151 MECHANICAL DATA 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) Case: MinMELF glass case(SOD- 80) Weight: Approx. 0.05gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Value Symbol Units DC Blocking Voltage Non-Repetitive Peak Reverse Voltage VR VRM 50 75 Average rectified current, Half wave rectification with Resistive load at TA=25 C and f 50Hz IAV 150 mA IFSM 500 mA Ptot TJ 500 175 -65 to +175 mW Non-Repetitive Peack Forward Surge Current Power dissipation at TA=25°C @t=1.0s Junction temperature Storage temperature range TSTG Volts Volts C C ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Forward voltage Leakage current Min. Typ. Units at IF=50mA VF at VR=50V IR Max 1 50 at VR=20V , TJ=150°C IR 50 mA 2 pF Junction capacitance at VR=VF=0V Reverse breakdown voltage tested with 5mA Reverse recovery time from IF=10mA to IR=10mA to IR=1mA, from IF=10mA to IR=1mA VR=6V, RL=100W Thermal resistance junction to ambient Rectification efficiency at f=100MHz, VRF=2V JINAN JINGHENG ELECTRONICS CO., LTD. CJ V(BR)R trr trr R 75 V 4 2 500 JA V nA ns K/W 0.45 11-28 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES Ll4151 FIG 2: DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG 1-FORWARD CHARACTERISTICS mA W 10 3 10 4 TJ=25 C f=1kHz 10 2 IF 10 3 TJ=100 C TJ=25 C rf 10 10 2 1 10 -1 10 -2 1 10 0 1 2V 10 -2 10 -1 1 VF 10 2 10 mA IF FIG 3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE mW 1000 900 1.1 TJ=25 C f=1MHz 800 700 Ptot Cj(VR) Cj(0V) 600 500 1.0 0.9 400 300 0.8 200 100 0.7 0 0 100 200 C 0 TA JINAN JINGHENG ELECTRONICS CO., LTD. 2 4 6 8 10V VR 11-29 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES LL4151 FIG.5 RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG 6: LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 10 4 5 2 10 3 D.U.T. 5 60W 2nF VRF=2V 5KW VO IR 2 10 2 5 2 10 5 VR=50V 2 1 0 100 200°C Tj FIG 7: ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 I V=tp/T T=1/fp IFRM tp 10 IFRM V=0 T 0.1 0.2 1 0.5 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 1 10S tp JINAN JINGHENG ELECTRONICS CO., LTD. 11-30 HTTP://WWW.JINGHENGGROUP.COM