Power Transistors 2SA2057 Silicon PNP epitaxial planar type Unit: mm Power supply for audio & visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 ■ Features • High speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 ■ Absolute Maximum Ratings TC = 25°C 0.55±0.15 2.54±0.30 5.08±0.50 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open) VCEO −60 V Emitter-base voltage (Collector open) VEBO −6 V Collector current IC −3 A Peak collector current * ICP −6 A Collector power dissipation PC 20 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Ta = 25°C 2.6±0.1 1 2 1 : Base 2 : Collector 3 : Emitter TO-220D-A1 Package 3 Internal Connection C B 2.0 E Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Conditions Min Typ Max Unit VCB = −60 V, IE = 0 −100 µA ICEO VCE = −60 V, IB = 0 −100 µA IEBO VEB = −6 V, IC = 0 −1 mA hFE1 * VCE = −4 V, IC = −1 A 120 320 hFE2 VCE = −4 V, IC = −3 A 40 −60 V IC = −3 A, IB = − 0.375 A VCE(sat) − 0.5 V fT VCE = −10 V, IC = − 0.1 A, f = 10 MHz Turn-on time ton IC = −1 A, Resistance loaded 0.15 0.30 µs Storage time tstg IB1 = − 0.1 A, IB2 = 0.1 A 0.4 0.7 µs VCC = 50 V 0.10 0.15 µs Transition frequency Fall time tf 90 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE1 120 to 250 160 to 320 Publication date: January 2003 SJD00284BED 1 2SA2057 PC Ta IC VBE VCE(sat) IC −10 (1) TC = Ta (2) Without heat sink Collector-emitter saturation voltage VCE(sat) (V) VCE = −4 V 30 −6 Ta = 100°C Collector current IC (A) Collector power dissipation PC (W) 35 25 (1) 20 15 10 25°C −4 −2 −25°C (2) 0 20 40 60 0 80 100 120 140 160 − 0.4 0 Ambient temperature Ta (°C) 100 Collector current IC (A) Forward current transfer ratio hFE Ta = 100°C −25°C 25°C 10 1 − 0.01 − 0.1 −1 Non repetitive pulse TC = 25°C −10 I CP t = 10 ms IC t = 1 ms t=1s −1 − 0.1 − 0.01 −1 −10 −10 −100 −1 000 Collector-emitter voltage VCE (V) Collector current IC (A) Rth t Thermal resistance Rth (°C/W) 1 000 Ta = 25°C 100 (1) (2) 10 1 0.1 0.001 (1) Without heat sink (2) With 100 × 100 × 2 mm Al 0.01 0.1 1 10 100 Time t (s) 2 SJD00284BED Ta = 100°C − 0.1 25°C −25°C − 0.001 − 0.01 − 0.1 −1 Collector current IC (A) Safe operation area −100 VCE = −4 V 1000 −1.2 Base-emitter voltage VBE (V) hFE IC 10000 − 0.8 −1 − 0.01 5 0 IC / I B = 8 1 000 −10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL