PANASONIC 2SA2057

Power Transistors
2SA2057
Silicon PNP epitaxial planar type
Unit: mm
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
4.6±0.2
9.9±0.3
3.0±0.5
2.9±0.2
■ Features
• High speed switching (tstg: storage time/tf: fall time is short)
• Low collector-emitter saturation voltage VCE(sat)
• Superior forward current transfer ratio hFE linearity
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
13.7±0.2
4.2±0.2
Solder Dip
15.0±0.5
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
■ Absolute Maximum Ratings TC = 25°C
0.55±0.15
2.54±0.30
5.08±0.50
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−60
V
Collector-emitter voltage (Base open)
VCEO
−60
V
Emitter-base voltage (Collector open)
VEBO
−6
V
Collector current
IC
−3
A
Peak collector current *
ICP
−6
A
Collector power dissipation
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Ta = 25°C
2.6±0.1
1
2
1 : Base
2 : Collector
3 : Emitter
TO-220D-A1 Package
3
Internal Connection
C
B
2.0
E
Note) *: Non-repetitive peak collector current
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Collector-emitter voltage (Base open)
VCEO
IC = −10 mA, IB = 0
Collector-base cutoff current (Emitter open)
ICBO
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Conditions
Min
Typ
Max
Unit
VCB = −60 V, IE = 0
−100
µA
ICEO
VCE = −60 V, IB = 0
−100
µA
IEBO
VEB = −6 V, IC = 0
−1
mA
hFE1 *
VCE = −4 V, IC = −1 A
120
320

hFE2
VCE = −4 V, IC = −3 A
40
−60
V
IC = −3 A, IB = − 0.375 A
VCE(sat)
− 0.5
V
fT
VCE = −10 V, IC = − 0.1 A, f = 10 MHz
Turn-on time
ton
IC = −1 A, Resistance loaded
0.15
0.30
µs
Storage time
tstg
IB1 = − 0.1 A, IB2 = 0.1 A
0.4
0.7
µs
VCC = 50 V
0.10
0.15
µs
Transition frequency
Fall time
tf
90
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
120 to 250
160 to 320
Publication date: January 2003
SJD00284BED
1
2SA2057
PC  Ta
IC  VBE
VCE(sat)  IC
−10
(1) TC = Ta
(2) Without heat sink
Collector-emitter saturation voltage VCE(sat) (V)
VCE = −4 V
30
−6
Ta = 100°C
Collector current IC (A)
Collector power dissipation PC (W)
35
25
(1)
20
15
10
25°C
−4
−2
−25°C
(2)
0
20
40
60
0
80 100 120 140 160
− 0.4
0
Ambient temperature Ta (°C)
100
Collector current IC (A)
Forward current transfer ratio hFE
Ta = 100°C
−25°C
25°C
10
1
− 0.01
− 0.1
−1
Non repetitive pulse
TC = 25°C
−10 I
CP
t = 10 ms
IC
t = 1 ms
t=1s
−1
− 0.1
− 0.01
−1
−10
−10
−100
−1 000
Collector-emitter voltage VCE (V)
Collector current IC (A)
Rth  t
Thermal resistance Rth (°C/W)
1 000
Ta = 25°C
100
(1)
(2)
10
1
0.1
0.001
(1) Without heat sink
(2) With 100 × 100 × 2 mm Al
0.01
0.1
1
10
100
Time t (s)
2
SJD00284BED
Ta = 100°C
− 0.1
25°C
−25°C
− 0.001
− 0.01
− 0.1
−1
Collector current IC (A)
Safe operation area
−100
VCE = −4 V
1000
−1.2
Base-emitter voltage VBE (V)
hFE  IC
10000
− 0.8
−1
− 0.01
5
0
IC / I B = 8
1 000
−10
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL