Power Transistors 2SB1174 Silicon PNP epitaxial planar type For voltage switching Unit: mm 3.0±0.2 2.0±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −3 A Peak collector current ICP −6 A Collector power dissipation PC 15 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C (1.0) 0˚ to 0.15˚ 2.5±0.2 (1.0) 1.1±0.1 0.75±0.1 0.4±0.1 1.0±0.2 ■ Absolute Maximum Ratings TC = 25°C Ta = 25°C 12.6±0.3 7.2±0.3 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 3.5±0.2 2.5±0.2 7.0±0.3 ■ Features 0.9±0.1 0˚ to 0.15˚ 2.3±0.2 4.6±0.4 1 2 3 1: Base 2: Collector 3: Emitter I-G1 Package Note) Self-supported type package is also prepared. 1.3 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0 Conditions Min Typ Max Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0 −10 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −50 µA −80 Unit V hFE1 VCE = −2 V, IC = − 0.1 A 45 hFE2 * VCE = −2 V, IC = − 0.5 A 90 Collector-emitter saturation voltage VCE(sat) IC = −2 A, IB = − 0.1 A − 0.5 V Base-emitter saturation voltage VBE(sat) IC = −2 A, IB = − 0.1 A −1.5 V Forward current transfer ratio 260 Transition frequency fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = − 0.5 A, IB1 = −50 mA, IB2 = 50 mA 0.3 µs Storage time tstg VCC = −50 V 1.1 µs Fall time tf 0.3 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE2 90 to 180 130 to 260 Publication date: March 2003 SJD00050AED 1 2SB1174 PC Ta IC VCE TC=25˚C −5 15 10 (1) 5 IB=–100mA −4 –80mA –60mA −3 –40mA –30mA −2 –20mA −1 –16mA –12mA –8mA (2) 40 –4mA 80 120 0 160 −2 0 Ambient temperature Ta (°C) −4 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) −10 TC=–100˚C –25˚C 25˚C − 0.1 − 0.01 − 0.01 − 0.1 −1 − 0.1 –25˚C 10 −1 IE=0 f=1MHz TC=25˚C 103 102 10 −100 100 103 102 10 1 − 0.01 −10 tstg 0.01 ton tf 0 − 0.8 −1.6 −2.4 Collector current IC (A) SJD00050AED −1 −10 Safe operation area −100 1 0.1 − 0.1 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V TC=25˚C 10 −10 VCE=–10V f=10MHz TC=25˚C 102 − 0.1 −1 Collector current IC (A) ton , tstg , tf IC Turn-on time ton , Storage time tstg , Fall time tf (µs) Collector output capacitance C (pF) (Common base, input open circuited) ob − 0.01 − 0.01 Collector current IC (A) Collector-base voltage VCB (V) 2 25˚C –25˚C fT I C 25˚C TC=100˚C Cob VCB −10 TC=100˚C 104 103 1 − 0.01 −10 104 −1 −12 VCE=–2V Collector current IC (A) 1 − 0.1 −10 −1 hFE IC 104 IC/IB=20 −1 −8 −10 Collector-emitter voltage VCE (V) VBE(sat) IC −100 −6 Transition frequency fT (MHz) 0 IC/IB=20 − 0.1 Collector current IC (A) 0 Collector-emitter saturation voltage VCE(sat) (V) (1)TC=Ta (2)Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) VCE(sat) IC −100 −6 20 Non repetitive pulse TC=25˚C −10 ICP IC t=1ms t=10ms t=300ms −1 − 0.1 −3.2 − 0.01 −1 −10 −100 −1 000 Collector-emitter voltage VCE (V) 2SB1174 Rth t Thermal resistance Rth (°C/W) 103 (1)Without heat sink (2)With a 50×50×2mm Al heat sink 102 (1) (2) 10 1 10−1 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00050AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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