PANASONIC 2SB1174

Power Transistors
2SB1174
Silicon PNP epitaxial planar type
For voltage switching
Unit: mm
3.0±0.2
2.0±0.2
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−130
V
Collector-emitter voltage (Base open)
VCEO
−80
V
Emitter-base voltage (Collector open)
VEBO
−7
V
Collector current
IC
−3
A
Peak collector current
ICP
−6
A
Collector power dissipation
PC
15
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
(1.0)
0˚ to 0.15˚
2.5±0.2
(1.0)
1.1±0.1
0.75±0.1 0.4±0.1
1.0±0.2
■ Absolute Maximum Ratings TC = 25°C
Ta = 25°C
12.6±0.3
7.2±0.3
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
3.5±0.2
2.5±0.2
7.0±0.3
■ Features
0.9±0.1
0˚ to 0.15˚
2.3±0.2
4.6±0.4
1
2
3
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
1.3
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Collector-emitter voltage (Base open)
VCEO
IC = −10 mA, IB = 0
Conditions
Min
Typ
Max
Collector-base cutoff current (Emitter open)
ICBO
VCB = −100 V, IE = 0
−10
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −5 V, IC = 0
−50
µA
−80
Unit
V
hFE1
VCE = −2 V, IC = − 0.1 A
45
hFE2 *
VCE = −2 V, IC = − 0.5 A
90
Collector-emitter saturation voltage
VCE(sat)
IC = −2 A, IB = − 0.1 A
− 0.5
V
Base-emitter saturation voltage
VBE(sat)
IC = −2 A, IB = − 0.1 A
−1.5
V
Forward current transfer ratio

260
Transition frequency
fT
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = − 0.5 A, IB1 = −50 mA, IB2 = 50 mA
0.3
µs
Storage time
tstg
VCC = −50 V
1.1
µs
Fall time
tf
0.3
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Publication date: March 2003
SJD00050AED
1
2SB1174
PC  Ta
IC  VCE
TC=25˚C
−5
15
10
(1)
5
IB=–100mA
−4
–80mA
–60mA
−3
–40mA
–30mA
−2
–20mA
−1
–16mA
–12mA
–8mA
(2)
40
–4mA
80
120
0
160
−2
0
Ambient temperature Ta (°C)
−4
Forward current transfer ratio hFE
Base-emitter saturation voltage VBE(sat) (V)
−10
TC=–100˚C
–25˚C
25˚C
− 0.1
− 0.01
− 0.01
− 0.1
−1
− 0.1
–25˚C
10
−1
IE=0
f=1MHz
TC=25˚C
103
102
10
−100
100
103
102
10
1
− 0.01
−10
tstg
0.01
ton
tf
0
− 0.8
−1.6
−2.4
Collector current IC (A)
SJD00050AED
−1
−10
Safe operation area
−100
1
0.1
− 0.1
Collector current IC (A)
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
(–IB1=IB2)
VCC=–50V
TC=25˚C
10
−10
VCE=–10V
f=10MHz
TC=25˚C
102
− 0.1
−1
Collector current IC (A)
ton , tstg , tf  IC
Turn-on time ton , Storage time tstg , Fall time tf (µs)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
− 0.01
− 0.01
Collector current IC (A)
Collector-base voltage VCB (V)
2
25˚C
–25˚C
fT  I C
25˚C
TC=100˚C
Cob  VCB
−10
TC=100˚C
104
103
1
− 0.01
−10
104
−1
−12
VCE=–2V
Collector current IC (A)
1
− 0.1
−10
−1
hFE  IC
104
IC/IB=20
−1
−8
−10
Collector-emitter voltage VCE (V)
VBE(sat)  IC
−100
−6
Transition frequency fT (MHz)
0
IC/IB=20
− 0.1
Collector current IC (A)
0
Collector-emitter saturation voltage VCE(sat) (V)
(1)TC=Ta
(2)Without heat sink
(PC=1.3W)
Collector current IC (A)
Collector power dissipation PC (W)
VCE(sat)  IC
−100
−6
20
Non repetitive pulse
TC=25˚C
−10
ICP
IC
t=1ms
t=10ms
t=300ms
−1
− 0.1
−3.2
− 0.01
−1
−10
−100
−1 000
Collector-emitter voltage VCE (V)
2SB1174
Rth  t
Thermal resistance Rth (°C/W)
103
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
102
(1)
(2)
10
1
10−1
10−4
10−3
10−2
10−1
1
10
102
103
104
Time t (s)
SJD00050AED
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
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2002 JUL