Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1742, 2SD742A Unit: mm 2SB1172 (1.0) −60 VCBO Unit V 0.75±0.1 0.4±0.1 −60 4.6±0.4 Collector-emitter voltage 2SB1172 (Base open) 2SB1172A VCEO Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −3 A Peak collector current ICP −5 A Collector power dissipation PC 15 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 V 2 3 −80 Ta = 25°C 0.9±0.1 0˚ to 0.15˚ 2.3±0.2 −80 2SB1172A 2.5±0.2 1.1±0.1 Rating 1.0±0.2 Collector-base voltage (Emitter open) Symbol 0˚ to 0.15˚ (1.0) ■ Absolute Maximum Ratings TC = 25°C Parameter 3.5±0.2 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 3.0±0.2 2.0±0.2 2.5±0.2 7.0±0.3 ■ Features 1: Base 2: Collector 3: Emitter I-G1 Package Note) Self-supported type package is also prepared. 1.3 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Symbol 2SB1172 VCEO Conditions IC = −30 mA, IB = 0 Collector-emitter cutoff current (E-B short) 2SB1172 Collector-emitter cutoff current (Emitter open) 2SB1172 V VCE = −4 V, IC = −3 A −1.8 V VCE = −60 V, VBE = 0 −200 µA ICEO IEBO hFE1 * hFE2 Collector-emitter saturation voltage −60 Unit VBE 2SB1172A Forward current transfer ratio Max ICES 2SB1172A Emitter-base cutoff current (Collector open) Typ −80 2SB1172A Base-emitter voltage Min VCE(sat) VCE = −80 V, VBE = 0 −200 VCE = −30 V, IB = 0 −300 VCE = −60 V, IB = 0 −300 VEB = −5 V, IC = 0 −1 mA 250 VCE = −4 V, IC = −1 A 70 VCE = −4 V, IC = −3 A 10 IC = −3 A, IB = − 0.375 A −1.2 µA V fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = −1 A, IB1 = − 0.1 A, IB2 = 0.1 A 0.5 µs Storage time tstg VCC = −50 V 1.2 µs 0.3 µs Transition frequency Fall time tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE2 Publication date: February 2003 70 to 150 120 to 250 SJD00048AED 1 2SB1172, 2SB1172A PC Ta IC VCE TC=25˚C (1) 5 −8 IB=–100mA −4 –80mA –60mA −3 –40mA –30mA –20mA −2 80 120 160 −4 VCE(sat) IC −8 −10 −10 −1 TC=100˚C − 0.1 –25˚C − 0.4 0 − 0.8 −1.6 −2.0 fT I C 104 VCE=–4V VCE=–5V f=10MHz TC=25˚C 25˚C TC=100˚C 102 −1.2 Base-emitter voltage VBE (V) 103 –25˚C 10 − 0.1 −1 1 − 0.01 −10 Collector current IC (A) − 0.1 −1 103 102 10 103 Thermal resistance Rth (°C/W) ICP t=1ms t=10ms t=300ms −10 2SB1172A 2SB1172 − 0.1 − 0.01 −1 −100 −1 −10 Rth t −10 −1 − 0.1 Collector current IC (A) Collector current IC (A) Non repetitive pulse TC=25˚C IC 1 − 0.01 −10 Safe operation area −100 Collector current IC (A) –25˚C 25˚C − 0.01 − 0.01 −1 000 (1)Without heat sink (2)With a 50×50×2mm Al heat sink 102 (1) (2) 10 1 10−1 10−4 10−3 10−2 Collector-emitter voltage VCE (V) 2 0 −12 hFE IC 104 IC/IB=10 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) −6 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −100 TC=100˚C −4 –4mA –16mA −2 0 Transition frequency fT (MHz) 40 25˚C –8mA (2) 0 −6 −2 –12mA −1 0 Collector current IC (A) 10 0 VCE=–4V −5 15 Collector current IC (A) Collector power dissipation PC (W) (1)TC=Ta (2)Without heat sink (PC=1.3W) IC VBE −10 −6 20 10−1 1 Time t (s) SJD00048AED 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL