Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open) VCEO 100 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 5 A Peak collector current ICP 8 A Base current IB 0.5 A Collector power dissipation PC 30 W Ta = 25°C 16.7±0.3 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C 2.7±0.2 φ 3.1±0.1 1.3±0.2 1.4±0.1 Solder Dip (4.0) • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 7.5±0.2 ■ Features 10.0±0.2 4.2±0.2 0.7±0.1 For voltage switching 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 Internal Connection 2.0 C Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter sustaining voltage *2 Conditions Min VCEO(SUS) IC = 0.2 A, L = 25 mH Typ Max 100 Unit V Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0 100 µA Collector-emitter cut-off current (Base open) ICEO VCE = 100 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 Forward current transfer ratio *1 hFE VCE = 3 V, IC = 3 A Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) 5 mA 15 000 IC = 3 A, IB = 3 mA 1.5 V IC = 3 A, IB = 3 mA 2.0 V 1 500 Transition frequency fT VCE = 10 V, IC = 1 A, f = 1 MHz Turn-on time ton IC = 3 A, IB1 = 3 mA, IB2 = −3 mA Storage time tstg VCC = 50 V Fall time 15 tf MHz 3 µs 5 µs 3 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Rank classification *2: VCEO(SUS) test circuit Rank hFE Q P 1 500 to 6 000 5 000 to 15 000 50 Hz/60 Hz mercury relay 120 Ω 6V Publication date: March 2003 SJD00207AED X L Y 1Ω 15 V G 1 2SD1633 PC Ta IC VCE IB=7.0mA 8 20 (2) 10 5.0mA 6 3.0mA 2.0mA 1.5mA 4 1.0mA 2 (3) 0.5mA 0.3mA 0.2mA 0.1mA (4) 0 0 25 50 75 100 125 0 150 Ambient temperature Ta (°C) 0 1 2 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 5 TC=–25˚C 1 100˚C 25˚C 0.1 1 TC=100˚C 104 25˚C –25˚C 103 102 10 0.1 10 102 Thermal resistance Rth (°C/W) Collector current IC (A) t=150µs t=1ms t=10ms DC 0.1 1 10 100 1 10 0.1 0.01 0.01 0.1 1 100 100 10 10 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (IB1=–IB2) VCC=50V TC=25˚C tstg tf 1 ton 0.1 0.01 0 2 4 6 Collector current IC (A) 1000 (1)Without heat sink (2)With a 100×100×2mm Al heat sink (1) (2) 10 1 10−1 10−2 10−4 10−3 10−2 Collector-emitter voltage VCE (V) 2 –25˚C Rth t 10 ICP 0.01 25˚C 1 Collector current IC (A) Non repetitive pulse TC=25˚C 1 TC=100˚C ton, tstg, tf IC Safe operation area IC 10 Collector current IC (A) VCE=3V Collector current IC (A) 100 6 IC/IB=1000 hFE IC 10 0.1 4 105 IC/IB=1000 0.01 0.01 3 100 Collector-emitter voltage VCE (V) VBE(sat) IC 100 Collector-emitter saturation voltage VCE(sat) (V) TC=25˚C Turn-on time ton , Storage time tstg , Fall time tf (µs) (1) 30 VCE(sat) IC 10 (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) Collector current IC (A) Collector power dissipation PC (W) 40 10−1 1 Time t (s) SJD00207AED 10 102 103 104 8 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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