Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • Large collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 4.2±0.2 5.5±0.2 2.7±0.2 7.5±0.2 ■ Features 4.2±0.2 0.7±0.1 Unit: mm φ 3.1±0.1 Collector-base voltage (Emitter open) Symbol 2SB0942 VCBO Rating Unit −60 V −80 2SB0942A −60 0.8±0.1 V Collector-emitter voltage 2SB0942 (Base open) 2SB0942A VCEO Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −4 A Peak collector current ICP −8 A Collector power PC 40 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.3±0.2 0.5+0.2 –0.1 2.54±0.3 −80 Ta = 25°C dissipation 1.4±0.1 Solder Dip (4.0) Parameter 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 2 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Symbol 2SB0942 IC = −30 mA, IB = 0 VCEO 2SB0942 Min Typ Max −60 Unit V −80 2SB0942A Base-emitter voltage Collector-emitter cutoff current (E-B short) Conditions VBE VCE = −4 V, IC = −3 A −2 V ICES VCE = −60 V, VBE = 0 −400 µA VCE = −80 V, VBE = 0 −400 ICEO VCE = −30 V, IB = 0 −700 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 Forward current transfer ratio hFE1 * VCE = −4 V, IC = −1 A 40 hFE2 VCE = −4 V, IC = −3 A 15 VCE(sat) IC = −4 A, IB = − 0.4 A 2SB0942A Collector-emitter cutoff current (Base open) Collector-emitter saturation voltage −1 mA 250 −1.5 V Transition frequency fT VCE = −10 V, IC = − 0.1 A, f = 10 MHz 30 MHz Turn-on time ton IC = −4 A, IB1 = − 0.4 A, IB2 = 0.4 A 0.2 µs Storage time tstg VCC = −50 V 0.5 µs Fall time tf 0.2 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R Q P hFE1 40 to 90 70 to 150 120 to 250 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJD00022BED 1 2SB0942, 2SB0942A PC Ta IC VCE 40 30 (1) 20 10 IB=–120mA −5 (3) TC=25˚C −4 –60mA −3 –40mA –20mA −2 –10mA 80 120 0 160 −2 0 Ambient temperature Ta (°C) −4 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) −8 −10 −1 25˚C TC=100˚C –25˚C −1 25˚C TC=100˚C 102 –25˚C 10 − 0.1 −1 DC 2SB0942 2SB0942A −1 000 102 10 − 0.1 −1 −10 Collector current IC (A) (1)Without heat sink (2)With a 100×100×2mm Al heat sink 102 (1) (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 Time t (s) Collector-emitter voltage VCE (V) SJD00022BED −2.0 103 1 − 0.01 −10 103 Thermal resistance Rth (°C/W) Collector current IC (A) t=10ms − 0.1 2 −1.6 Rth t t=1ms −100 −1.2 VCE=–5V f=10MHz TC=25˚C Collector current IC (A) −10 ICP −10 − 0.8 104 103 1 − 0.01 −10 Non repetitive pulse TC=25˚C −1 − 0.4 fT I C Safe operation area IC 0 Base-emitter voltage VBE (V) VCE=–4V Collector current IC (A) −100 0 −12 hFE IC −10 − 0.1 −6 104 IC/IB=10 − 0.01 −1 –25˚C −4 Collector-emitter voltage VCE (V) VCE(sat) IC −100 − 0.01 − 0.01 TC=100˚C –5mA 40 − 0.1 25˚C −6 −2 –8mA Transition frequency fT (MHz) 0 −8 –80mA (4) 0 VCE=–4V –100mA −1 (2) −10 Collector current IC (A) (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) Collector current IC (A) Collector power dissipation PC (W) IC VBE −6 50 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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