Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 (2.0) (1.5) 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 ■ Absolute Maximum Ratings TC = 25°C 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −160 V Collector-emitter voltage (Base open) VCEO −160 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −8 A Peak collector current ICP −15 A Collector power dissipation PC 150 W Ta = 25°C (1.5) 2.0±0.3 20.0±0.5 (2.5) Solder Dip (1.5) • Optimum for 120 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) φ 3.3±0.2 (3.0) ■ Features 5.0±0.3 (3.0) (10.0) (6.0) (2.0) (4.0) 26.0±0.5 20.0±0.5 10.9±0.5 1 2 1: Base 2: Collector 3: Emitter TOP-3L-A1 Package 3 Internal Connection C B 3.5 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −30 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −160 V, IE = 0 −100 µA Collector-emitter cutoff current (Base open) ICEO VCE = −160 V, IB = 0 −100 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −100 µA Forward current transfer ratio hFE1 VCE = −5 V, IC = −1 A 1 000 VCE = −5 V, IC = −7 A 3 500 hFE2 * Conditions Collector-emitter saturation voltage VCE(sat) IC = −7 A, IB = −7 mA Base-emitter saturation voltage VBE(sat) IC = −7 A, IB = −7 mA Min Typ Max −160 Unit V 20 000 −3 −3 V V fT VCE = −10 V, IC = − 0.5 A, f = 1 MHz 20 Turn-on time ton IC = −7 A, IB1 = −7 mA, IB2 = 7 mA 1.0 µs Storage time tstg VCC = −50 V 1.5 µs 1.2 µs Transition frequency Fall time tf MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q S P 3 500 to 10 000 5 000 to 15 000 7 000 to 20 000 Publication date: March 2003 SJD00076BED 1 2SB1470 PC Ta IC VCE 80 40 –0.9mA −6 –0.8mA –0.7mA −4 –0.6mA –0.5mA −2 –0.4mA –0.3mA (2) 0 0 40 80 120 0 160 Ambient temperature Ta (°C) –0.2mA −4 0 −8 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) −10 TC=–25˚C 25˚C −1 125˚C − 0.1 −1 −10 104 –25˚C 102 10 −100 − 0.1 tf ton −100 Non repetitive pulse TC=25˚C −10 IC t=1ms t=10ms DC −1 − 0.1 0.1 0 −2 −4 −6 TC=25˚C 25˚C 125˚C − 0.1 − 0.01 − 0.1 −8 Collector current IC (A) −10 − 0.01 −1 −10 −100 −1 000 Collector-emitter voltage VCE (V) SJD00076BED −1 −10 −100 Collector current IC (A) 104 IE=0 f=1MHz TC=25˚C 103 102 10 1 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) ICP Collector current IC (A) Turn-on time ton , Storage time tstg , Fall time tf (µs) −10 Safe operation area tstg 0.01 −1 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (–IB1=IB2) VCC=–50V TC=25˚C 1 25˚C TC=125˚C 103 ton , tstg , tf IC 10 −1 Cob VCB VCE=–5V Collector current IC (A) 100 −10 hFE IC 105 IC/IB=1000 − 0.01 − 0.1 −16 IC/IB=1000 Collector-emitter voltage VCE (V) VBE(sat) IC −100 −12 Collector-emitter saturation voltage VCE(sat) (V) (1) 120 IB=–1.0mA Collector output capacitance C (pF) (Common base, input open circuited) ob 160 TC=25˚C Collector current IC (A) Collector power dissipation PC (W) (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (PC=3.5W) (3) 2 VCE(sat) IC −100 −8 200 2SB1470 Rth t 104 Thermal resistance Rth (°C/W) Note: Rth was measured at Ta=25˚C and under naturalconvection. (1)PT=10V×0.3A(3W) and without heat sink (2)PT=10V×1.0A(10W) and with a 100×100×2mm Al heat sink 103 102 (1) 10 (2) 1 10−1 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00076BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. 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