Power Transistors 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB938A –60 VCEO –80 10.0±0.3 V –5 V Peak collector current ICP –8 A Collector current IC –4 A Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg 2.0 Unit: mm VEBO dissipation 10.5min. V Emitter to base voltage Collector power TC=25°C 2SB938A Collector cutoff 2SB938 current 2SB938A ICBO ICEO IEBO Emitter cutoff current Collector to emitter 2SB938 voltage 2SB938A Forward current transfer ratio 150 ˚C ˚C typ fT Turn-on time ton Storage time tstg Fall time tf –200 VCB = –80V, IE = 0 –200 VCE = –30V, IB = 0 –500 VCE = –40V, IB = 0 –500 VEB = –5V, IC = 0 –2 –60 P 2000 to 5000 4000 to 10000 Unit µA µA mA V –80 10000 VCE = –3V, IC = –3A –2.5 IC = –3A, IB = –12mA –2 IC = –5A, IB = –20mA –4 VCE = –10V, IC = – 0.5A, f = 1MHz IC = –3A, IB1 = –12mA, IB2 = 12mA Internal Connection Rank classification max VCB = –60V, IE = 0 2000 Transition frequency hFE2 min VCE = –3V, IC = –3A VCE(sat) Q Conditions 1000 Collector to emitter saturation voltage Rank 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 VCE = –3V, IC = – 0.5A VBE FE2 2 hFE1 hFE2 0 to 0.4 1.1 max. IC = –30mA, IB = 0 * R0.5 R0.5 5.08±0.5 VCEO Base to emitter voltage *h 1.0±0.1 W –55 to +150 Symbol 2SB938 6.0±0.3 (TC=25˚C) Parameter current 3.4±0.3 2.54±0.3 1 Collector cutoff 8.5±0.2 0.8±0.1 1.3 ■ Electrical Characteristics 1:Base 2:Collector 3:Emitter N Type Package 3 14.7±0.5 2SB938 2 +0.4 Collector to –80 1 3.0–0.2 2SB938A Unit +0 base voltage –60 VCBO 5.08±0.5 1.5–0.4 2SB938 Ratings 0.5max. 2.54±0.3 (TC=25˚C) Symbol Collector to 0.8±0.1 10.0±0.3 Parameter 1.1max. 4.4±0.5 ■ Absolute Maximum Ratings 1.5max. 2.0 ● High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 ● 1.0±0.1 1.5±0.1 6.0±0.5 ■ Features ● Unit: mm 3.4±0.3 8.5±0.2 V V 15 MHz 0.3 µs 2 µs 0.5 µs C B E 1 Power Transistors 2SB938, 2SB938A PC — Ta IC — VCE IC — VBE –6 40 (1) 30 20 –10 TC=25˚C –5 10 VCE=–3V IB=–3.0mA –2.5mA –2.0mA –1.5mA –1.0mA –4 Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 – 0.5mA –3 – 0.4mA – 0.3mA –2 – 0.2mA –8 25˚C –6 TC=100˚C –25˚C –4 –2 –1 (2) (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –3 –4 VCE(sat) — IC 25˚C –1 –25˚C – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 105 1000 TC=100˚C 25˚C 104 –25˚C 103 102 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Area of safe operation (ASO) –10 ICP –3 IC t=1ms 10ms –1 300ms – 0.3 – 0.03 –3 –10 –30 2SB938A 2SB938 – 0.1 –100 –300 –1000 Collector to emitter voltage VCE (V) 30 10 3 –1 –3 –10 –30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 100 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 –100 Collector to base voltage VCB (V) 103 –30 300 1 – 0.1 – 0.3 –10 Collector current IC (A) –100 –3.2 IE=0 f=1MHz TC=25˚C 3000 Collector current IC (A) Collector current IC (A) Collector output capacitance Cob (pF) Forward current transfer ratio hFE TC=100˚C –2.4 Cob — VCB VCE=–3V –10 –1.6 10000 IC/IB=250 –3 – 0.8 Base to emitter voltage VBE (V) hFE — IC – 0.3 2 0 106 –30 – 0.01 –1 –5 Collector to emitter voltage VCE (V) –100 Collector to emitter saturation voltage VCE(sat) (V) –1 1 Time t (s) 10 102 103 104