Power Transistors 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 emitter voltage 2SB929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature Tj Storage temperature Tstg 2SB929 current 2SB929A Collector cutoff 2SB929 current 2SB929A ICES ICEO IEBO Emitter cutoff current Collector to emitter 2SB929 voltage 2SB929A Forward current transfer ratio ˚C –55 to +150 ˚C Conditions 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 min typ max –200 VCE = –80V, VBE = 0 –200 VCE = –30V, IB = 0 –300 VCE = –60V, IB = 0 –300 VEB = –5V, IC = 0 –1 –60 VCEO IC = –30mA, IB = 0 hFE1* VCE = –4V, IC = –1A 70 10 hFE2 VCE = –4V, IC = –3A VBE VCE = –4V, IC = –3A Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = – 0.375A Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf FE1 1 VCE = –60V, VBE = 0 Base to emitter voltage *h 0 to 0.4 1.1 max. 5.08±0.5 150 Symbol R0.5 R0.5 2.54±0.3 (TC=25˚C) Parameter Collector cutoff 1.0±0.1 W 1.3 ■ Electrical Characteristics 6.0±0.3 0.8±0.1 35 PC Ta=25°C 3.4±0.3 V Emitter to base voltage Collector power TC=25°C Unit: mm 8.5±0.2 14.7±0.5 –60 VCEO V +0.4 2SB929 –80 3.0–0.2 Collector to –60 VCBO 4.4±0.5 2SB929A 1:Base 2:Collector 3:Emitter N Type Package 3 +0 2SB929 base voltage 2 Unit 1.5–0.4 Collector to Ratings 10.0±0.3 Symbol 0.5max. 5.08±0.5 Absolute Maximum Ratings (TC=25˚C) Parameter 1.1max. 2.0 ■ 1.5max. 4.4±0.5 ● 1.0±0.1 2.0 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ■ Features ● Unit: mm 6.0±0.5 For power amplification Complementary to 2SD1252 and 2SD1252A ● 3.4±0.3 8.5±0.2 IC = –1A, IB1 = – 0.1A, IB2 = 0.1A Unit µA µA mA V –80 250 –1.8 –1.2 V V 30 MHz 0.5 µs 1.2 µs 0.3 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. 1 Power Transistors 2SB929, 2SB929A PC — Ta IC — VCE 35 30 25 20 (1) 15 10 –10 TC=25˚C –5 IB=–100mA –4 –80mA –60mA –40mA –3 –30mA –20mA –2 (3) 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –4 0 –6 –8 –10 –3 –1 – 0.3 TC=100˚C – 0.1 –25˚C 25˚C –1 –3 300 100 TC=100˚C 25˚C –25˚C 30 10 3 –1 –3 300ms 2SB929 –3 –10 –30 2SB929A – 0.1 – 0.03 –100 –300 –1000 Collector to emitter voltage VCE 2 100 30 10 (V) –1 –3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Collector current IC (A) t=1ms –1 – 0.3 300 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 103 10ms VCE=–5V f=10MHz TC=25˚C 3 Area of safe operation (ASO) –10 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 –2.0 1000 Collector current IC (A) IC –1.6 3000 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 Non repetitive pulse TC=25˚C –1.2 VCE=–4V 3000 Collector current IC (A) ICP – 0.8 fT — IC 1000 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 – 0.4 Base to emitter voltage VBE (V) Transition frequency fT (MHz) –10 – 0.01 –1 0 10000 IC/IB=10 –3 –12 hFE — IC Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –2 10000 –30 –25˚C –4 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 – 0.03 25˚C TC=100˚C –4mA –16mA 0 0 –6 –8mA (2) 0 –8 –2 –12mA –1 5 VCE=–4V Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) IC — VBE –6 Collector current IC (A) Collector power dissipation PC (W) 40 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10