Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification High collector to base voltage VCBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. ■ Absolute Maximum Ratings +0.3 1.0±0.2 1.1±0.1 10.0 –0. ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 0.85±0.1 0.75±0.1 0.4±0.1 2.3±0.2 (TC=25˚C) 4.6±0.4 2SD2215 base voltage 2SD2215A Collector to 2SD2215 350 VCBO 400 250 VCEO emitter voltage 2SD2215A Emitter to base voltage VEBO Peak collector current Collector current 300 Unit 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 V 7.0±0.3 3.5±0.2 V 5 V ICP 1.5 A IC 0.75 A 2.0±0.2 0 to 0.15 dissipation Junction temperature Tj Storage temperature Tstg W 1.3 0.75±0.1 150 ˚C –55 to +150 ˚C 1 3 4.6±0.4 Symbol 2SD2215 current 2SD2215A Collector cutoff 2SD2215 current 2SD2215A Emitter cutoff current Collector to emitter 2SD2215 voltage 2SD2215A Forward current transfer ratio Conditions min typ 1:Base 2:Collector 3:Emitter I Type Package (Y) max VCE = 350V, VBE = 0 1 VCE = 400V, VBE = 0 1 VCE = 150V, IB = 0 1 VCE = 200V, IB = 0 1 IEBO VEB = 5V, IC = 0 1 VCEO IC = 30mA, IB = 0 hFE1* VCE = 10V, IC = 0.3A 70 hFE2 VCE = 10V, IC = 1A 10 ICES ICEO 0.9±0.1 0 to 0.15 2 (TC=25˚C) Parameter Collector cutoff 0.5 max. 1.1±0.1 2.3±0.2 ■ Electrical Characteristics 1.0 1.0 max. 7.2±0.3 2.5 15 PC Ta=25°C 10.2±0.3 3.0±0.2 Collector power TC=25°C Unit: mm 1.0 Collector to Ratings 2.5±0.2 Symbol 2.5±0.2 Parameter 250 Unit mA mA mA V 300 250 Base to emitter voltage VBE VCE = 10V, IC = 1A 1.5 V Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 0.2A 1 V Transition frequency fT VCE = 5V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE1 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 MHz 0.5 µs 2 µs 0.5 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SD2215, 2SD2215A PC — Ta IC — VCE 1.0 10 5 IB=14mA 12mA 10mA 0.8 8mA 0.6 6mA 0.4 4mA 0.2 2mA 25˚C TC=100˚C –25˚C 2.4 1.6 0.8 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 3000 1000 1 25˚C –25˚C 0.1 0.03 0.03 0.1 0.3 1 1.6 300 100 TC=100˚C 25˚C –25˚C 30 10 3 0.1 0.3 1 3 VCE=10V f=10MHz TC=25˚C 300 100 30 10 3 1 0.1 0.001 0.003 0.01 0.03 10 Collector current IC (A) Area of safe operation (ASO) 0.1 0.3 Collector current IC (A) Rth(t) — t Non repetitive pulse TC=25˚C 3 ICP IC 1 t=1ms 10ms 0.3 DC 0.1 2SD2215 0.01 0.003 2SD2215A 0.03 0.001 1 3 10 30 100 300 Collector to emitter voltage VCE 1000 (V) Thermal resistance Rth(t) (˚C/W) 1000 10 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 100 (2) 10 1 0.1 10–3 2.4 0.3 1 0.01 0.03 3 2.0 fT — IC Transition frequency fT (MHz) Forward current transfer ratio hFE TC=100˚C 0.01 0.01 1.2 VCE=10V 3 0.3 0.8 1000 IC/IB=10 10 0.4 Base to emitter voltage VBE (V) 10000 Collector current IC (A) Collector current IC (A) 3.2 (2) 0 2 VCE=10V Collector current IC (A) (1) 15 4.0 TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 1.2 Collector current IC (A) Collector power dissipation PC (W) 20 10–2 10–1 1 10 Time t (s) 102 103 104 1