PANASONIC 2SB1638

Power Transistors
2SB1638, 2SB1638A
Silicon PNP epitaxial planar type
Unit: mm
7.0±0.3
For low-voltage switching
+0.3
1.1±0.1
1.0±0.2
●
Low collector to emitter saturation voltage VCE(sat)
Satisfactory linearity of foward current transfer ratio hFE
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
10.0 –0.
●
0.8±0.2
7.2±0.3
■ Features
●
3.5±0.2
3.0±0.2
0.85±0.1
0.75±0.1
0.4±0.1
2.3±0.2
Collector to
2SB1638
–50
–20
VCEO
emitter voltage 2SB1638A
–40
V
7.0±0.3
VEBO
–5
V
Peak collector current
ICP
–12
A
Collector current
IC
–7
A
dissipation
15
PC
Ta=25°C
Junction temperature
Tj
Storage temperature
Tstg
2.5
0.75±0.1
1
150
˚C
–55 to +150
˚C
Symbol
2SB1638
current
2SB1638A
Emitter cutoff current
ICBO
IEBO
Collector to emitter
2SB1638
voltage
2SB1638A
Forward current transfer ratio
0.9±0.1
0 to 0.15
2
3
2.3±0.2
1:Base
2:Collector
3:Emitter
I Type Package (Y)
(TC=25˚C)
Parameter
Collector cutoff
0.5 max.
1.1±0.1
4.6±0.4
■ Electrical Characteristics
0 to 0.15
3.0±0.2
W
1.3
Unit: mm
V
Emitter to base voltage
Collector power TC=25°C
3.5±0.2
2.0±0.2
1.0
2SB1638A
1:Base
2:Collector
3:Emitter
I Type Package
3
2.5±0.2
base voltage
–40
VCBO
2
1.0
2SB1638
1
Unit
2.5±0.2
Collector to
Ratings
7.2±0.3
Symbol
10.2±0.3
Parameter
(TC=25˚C)
1.0 max.
■ Absolute Maximum Ratings
4.6±0.4
Conditions
min
–50
VCB = –50V, IE = 0
–50
VEB = –5V, IC = 0
–50
–20
IC = –10mA, IB = 0
hFE1
VCE = –2V, IC = – 0.1A
45
VCE = –2V, IC = –2A
90
hFE2
max
VCB = –40V, IE = 0
VCEO
*
typ
Unit
µA
µA
V
–40
260
Collector to emitter saturation voltage
VCE(sat)
IC = –5A, IB = – 0.16A
Base to emitter saturation voltage
VBE(sat)
IC = –5A, IB = – 0.16A
Transition frequency
fT
VCE = –10V, IC = – 0.5A, f = 10MHz
150
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
140
pF
Turn-on time
ton
0.1
µs
Storage time
tstg
0.5
µs
Fall time
tf
0.1
µs
*h
FE2
IC = –2A, IB1 = –66mA, IB2 = 66mA
– 0.6
–1.5
V
V
Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
1
Power Transistors
2SB1638, 2SB1638A
IC — VCE
(1)
5
–35mA
–4
–30mA
–3
–25mA
–20mA
–2
–10mA
0
80 100 120 140 160
0
Ambient temperature Ta (˚C)
–1
–2
–4
–5
–6
TC=–25˚C
100˚C
25˚C
– 0.1
– 0.03
– 0.3
–1
–3
1000
300
TC=100˚C
100
–25˚C
25˚C
30
10
3
300
100
30
10
3
Cob — VCB
–1
–3
–10
–30
1
– 0.01 – 0.03 – 0.1 – 0.3
–100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=30
(–IB1=IB2)
VCC=–20V
TC=25˚C
–3
–1
ton
ICP
–10
IC
t=1ms
–3
–1
tf
– 0.1
– 0.03
3
1
– 0.1 – 0.3
– 0.03
– 0.01
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
10ms
300ms
– 0.3
– 0.1
10
Non repetitive pulse
TC=25˚C
–30
tstg
– 0.3
30
–10
Area of safe operation (ASO)
Collector current IC (A)
Switching time ton,tstg,tf (µs)
100
–3
–100
–10
300
–1
Collector current IC (A)
ton, tstg, tf — IC
10000
–10
VCE=–10V
f=10MHz
TC=25˚C
Collector current IC (A)
1000
–3
3000
1
– 0.1 – 0.3
–10
IE=0
f=1MHz
TC=25˚C
–1
VCE=–2V
3000
Collector current IC (A)
3000
– 0.3
Collector current IC (A)
fT — IC
1000
– 0.01
– 0.1
– 0.01
– 0.1
10000
10000
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
–3
– 0.3
Collector output capacitance Cob (pF)
–3
hFE — IC
IC/IB=30
–1
–25˚C
Collector to emitter voltage VCE (V)
VBE(sat) — IC
–10
–1
2SB1638
60
25˚C
– 0.3
Transition frequency fT (MHz)
40
–3
– 0.03
–5mA
(2)
20
IC/IB=30
TC=100˚C
– 0.1
–15mA
–1
0
–10
0
–1
–2
–3
–4
–5
–6
–7
Collector current IC (A)
–8
– 0.01
–1
2SB1638A
10
–50mA
–45mA
–40mA
–5
Collector current IC (A)
Collector power dissipation PC (W)
15
TC=25˚C
IB=–60mA
(1) TC=Ta
(2) Without heat sink
(PC=1.3W)
0
2
VCE(sat) — IC
–6
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
20
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage VCE (V)
Power Transistors
2SB1638, 2SB1638A
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3