Power Transistors 2SD2209 Silicon NPN triple diffusion planar type Darlington Unit: mm 7.0±0.3 For power amplification and switching 0.8±0.2 7.2±0.3 ■ Features +0.3 1.0±0.2 1.1±0.1 10.0 –0. ● 3.5±0.2 3.0±0.2 I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 0.85±0.1 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 Parameter Symbol Ratings Unit Collector to base voltage VCBO 100±15 V Collector to emitter voltage VCEO 100±15 V Emitter to base voltage VEBO 5 V Peak collector current ICP 8 A Collector current IC 4 A 2 1:Base 2:Collector 3:Emitter I Type Package 3 7.0±0.3 dissipation Ta=25°C PC 7.2±0.3 10.2±0.3 2.5 W 1.3 1.0 3.0±0.2 1.0 15 0.75±0.1 0.5 max. 1.1±0.1 Junction temperature Tj 150 Tstg –55 to +150 2 3 ˚C 2.3±0.2 4.6±0.4 ■ Electrical Characteristics (TC=25˚C) Parameter Symbol 0.9±0.1 0 to 0.15 ˚C 1 Storage temperature Unit: mm 0 to 0.15 1.0 max. Collector power TC=25°C 3.5±0.2 2.0±0.2 2.5±0.2 1 (TC=25˚C) 2.5±0.2 ■ Absolute Maximum Ratings Conditions min typ 1:Base 2:Collector 3:Emitter I Type Package (Y) max Unit Collector cutoff current ICBO VCB = 85V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 2 mA Collector to emitter voltage VCEO IC = 5mA, IB = 0 115 V hFE1 VCE = 3V, IC = 0.5A 1000 hFE2*1 VCE = 3V, IC = 3A 1000 Forward current transfer ratio 85 2 IC = 5A, IB = 20mA 4 2.5 Collector to emitter saturation voltage VCE(sat) Base to emitter saturation voltage VBE(sat) IC = 3A, IB = 12mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Energy handling capability Es/b*2 *1h FE2 Rank hFE2 Q P 20 IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V IC = 1A, L = 100mH, RBE = 100Ω *2E Rank classification 10000 IC = 3A, IB = 12mA s/b Test circuit L coil IB1 T.U.T –IB2 Vin 1000 to 5000 2000 to 10000 50 V V MHz 0.3 µs 3.0 µs 1.0 µs mJ Internal Connection IC C VCC B tW Vclamp E 1 Power Transistors 2SD2209 IC — VCE 20 5 Collector current IC (A) (1) 15 10 5 (2) IB=2mA 4 1mA 0.75mA 0.5mA 0.15mA 3 0.1mA 2 1 (3) 0 0 25 50 75 100 125 150 0 Ambient temperature Ta (˚C) 2 4 8 10 12 Forward current transfer ratio hFE 25˚C –25˚C 3000 3 TC=–25˚C 1000 100˚C 0.3 0.1 0.3 1 3 300 100 0.1 10 Collector current IC (A) IC — Lcoil 1 3 10 Area of safe operation (ASO) Non repetitive pulse TC=25˚C Collector current IC (A) Collector current IC (A) 30 10 3 1 ICP 10 t=1ms IC 10ms 1 300ms 0.1 0.3 0.1 0.01 10 30 Load inductance Lcoil (mH) 2 TC=–25˚C 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 100 1 0.3 1 3 10 Collector current IC (A) IE=0 f=1MHz TC=25˚C 300 100 30 10 3 10 100 1 3 10 30 100 Collector to base voltage VCB (V) 100 3 1 1 0.3 Collector current IC (A) 100 1 25˚C Cob — VCB TC=100˚C 10000 10 0.1 0.01 0.03 3 1000 VCE=3V 30000 30 25˚C IC/IB=250 hFE — IC 100000 IC/IB=250 1 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 6 Collector output capacitance Cob (pF) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) 0 Base to emitter saturation voltage VBE(sat) (V) VCE(sat) — IC 6 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 25 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD2209 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 100 (2) 10 1 0.1 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3