Power Transistors 2SD1753 Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification with high forward current transfer ratio +0.3 1.0±0.2 10.0 –0. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 2.3±0.2 4.6±0.4 Unit VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 6 V Peak collector current ICP 2.5 A Collector current IC 1 A Base current IB 0.1 A dissipation Ta=25°C 15 PC Junction temperature Tj Storage temperature Tstg W 1.3 150 ˚C –55 to +150 ˚C 3.5±0.2 2.0±0.2 Parameter 2.5 0.75±0.1 1 0.9±0.1 0 to 0.15 2 3 2.3±0.2 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Symbol Conditions min ICBO Emitter cutoff current IEBO VEB = 6V, IC = 0 Collector to emitter voltage VCEO IC = 25mA, IB = 0 150 Forward current transfer ratio hFE* VCE = 4V, IC = 0.2A 500 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 0.02A Transition frequency fT VCE = 4V, IC = 0.1A, f = 10MHz FE 0.5 max. 1.1±0.1 Collector cutoff current *h 0 to 0.15 3.0±0.2 4.6±0.4 ■ Electrical Characteristics Unit: mm 1.0 Collector to base voltage 7.0±0.3 1.0 max. Ratings 7.2±0.3 Symbol Collector power TC=25°C 1:Base 2:Collector 3:Emitter I Type Package 3 (TC=25˚C) 10.2±0.3 Parameter 2 2.5±0.2 1 ■ Absolute Maximum Ratings 0.85±0.1 0.4±0.1 1.0 ● 1.1±0.1 0.75±0.1 2.5±0.2 ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 typ VCB = 200V, IE = 0 max Unit 100 µA 100 µA V 2000 1 25 V MHz Rank classification Rank hFE Q P 500 to 1200 800 to 2000 1 Power Transistors 2SD1753 PC — Ta IC — VCE VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 0.5 TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 20 15 (1) 10 5 IB=400µA 0.4 350µA 300µA 0.3 250µA 200µA 0.2 150µA 100µA 0.1 50µA (2) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 –25˚C 0.3 0.1 0.03 0.3 1 25˚C 300 100 30 10 3 3 ICP t=1ms 300ms 0.1 0.03 0.01 3 10 30 100 300 Collector to emitter voltage VCE 2 1 1000 100 30 10 0.1 0.3 1 3 1 0.01 0.03 10 (V) 0.1 0.3 1 3 Collector current IC (A) (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 3 VCE=4V f=10MHz TC=25˚C Rth(t) — t Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 1 0.3 300 Collector current IC (A) Non repetitive pulse TC=25˚C 0.3 0.1 3 103 1 0.03 1000 Area of safe operation (ASO) 10ms 0.01 0.01 3000 TC=100˚C 1 0.01 0.03 3 100 IC 0.03 fT — IC –25˚C Collector current IC (A) 30 0.1 10000 Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 1 0.1 3000 1000 25˚C 0.03 –25˚C VCE=4V TC=100˚C 0.01 0.01 25˚C 0.3 hFE — IC IC/IB=25 3 1 Collector current IC (A) 10000 10 TC=100˚C 3 Collector to emitter voltage VCE (V) VBE(sat) — IC IC/IB=25 10 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10