BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD745 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) E T E L O S B O BD746B V CBO -110 -45 BD746B VCEO Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) V -90 BD746 BD746C Emitter-base voltage -70 BD746C BD746A UNIT -50 BD746 BD746A VALUE -60 V -80 -100 VEBO -5 V IC -20 A ICM -25 A IB -7 A Ptot 115 W Ptot 3.5 W ½LIC2 90 mJ Operating free air temperature range TA -65 to +150 °C Operating junction temperature range Tj -65 to +150 °C Tstg -65 to +150 °C TL 260 °C Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICBO ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter TEST CONDITIONS MIN -45 BD746A -60 BD746B -80 BD746C -100 TYP MAX IC = -30 mA IB = 0 VCE = -50 V VBE = 0 BD746 -0.1 VCE = -70 V VBE = 0 BD746A -0.1 VCE = -90 V VBE = 0 BD746B -0.1 Collector cut-off VCE = -110 V VBE = 0 BD746C -0.1 current VCE = -50 V VBE = 0 TC = 125°C BD746 -5 VCE = -70 V VBE = 0 TC = 125°C BD746A -5 VCE = -90 V VBE = 0 TC = 125°C BD746B -5 VCE = -110 V VBE = 0 TC = 125°C BD746C Collector cut-off VCE = -30 V IB = 0 BD746/746A -0.1 current VCE = -60 V IB = 0 BD746B/746C -0.1 VEB = -5 V IC = 0 VCE = -4 V IC = -1 A breakdown voltage Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio (see Note 5) BD746 -4 V IC = -5 A VCE = -4 V IC = -20 A V mA -5 -0.5 mA mA 40 E T E L O S B O VCE = UNIT (see Notes 5 and 6) 20 150 5 IB = -0.5 A IC = -5 A IB = -5 A IC = -20 A VCE = -4 V IC = -5 A VCE = -4 V IC = -20 A VCE = -10 V IC = -1 A f = 1 kHz 25 VCE = -10 V IC = -1 A f = 1 MHz 5 -1 (see Notes 5 and 6) -3 -1 (see Notes 5 and 6) -3 V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.1 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN td Delay time 20 ns tr Rise time IC = -5 A IB(on) = -0.5 A IB(off) = 0.5 A 120 ns ts Storage time VBE(off) = 4.2 V RL = 6 Ω tp = 20 µs, dc ≤ 2% 600 ns tf Fall time 300 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS636AE 1000 hFE - DC Current Gain TC = 125°C TC = 25°C TC = -55°C 100 -1·0 IC = 10 IB tp = 300µs, duty cycle < 2% -1·0 -0·1 E T E L O S B O VCE = -4 V tp = 300 µs, duty cycle < 2% 10 -0·1 TCS636AF -10 -10 -100 -0·01 -0·1 -1·0 IC - Collector Current - A TC = -55°C TC = 25°C TC = 125°C -10 -100 IC - Collector Current - A Figure 1. Figure 2. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS635AC tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% tp = 50 ms, d = 0.1 = 10% DC Operation -10 -1·0 -0·1 BD746 BD746A BD746B BD746C -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS635AB Ptot - Maximum Power Dissipation - W 120 100 80 60 40 E T E L O S B O 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.