BD245, BD245A, BD245B, BD245C

BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
BD246 Series
●
80 W at 25°C Case Temperature
●
10 A Continuous Collector Current
●
15 A Peak Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-emitter voltage (RBE = 100 Ω)
E
T
E
L
O
S
B
O
Collector-emitter voltage (IC = 30 mA)
BD245B
VCER
70
90
BD245C
115
BD245
45
BD245A
BD245B
UNIT
55
BD245
BD245A
VALUE
V CEO
BD245C
60
80
V
V
100
VEBO
5
V
IC
10
A
ICM
15
A
IB
3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
80
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3
W
½LIC2
62.5
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
250
°C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = 30 mA
MIN
IB = 0
(see Note 5)
BD245
45
BD245A
60
BD245B
80
BD245C
100
TYP
MAX
V
VCE = 55 V
VBE = 0
BD245
0.4
Collector-emitter
VCE = 70 V
VBE = 0
BD245A
0.4
cut-off current
VCE = 90 V
VBE = 0
BD245B
0.4
VCE = 115 V
VBE = 0
BD245C
0.4
Collector cut-off
VCE = 30 V
IB = 0
BD245/245A
0.7
current
VCE = 60 V
IB = 0
BD245B/245C
0.7
VEB =
5V
IC = 0
Emitter cut-off
current
Forward current
transfer ratio
1
VCE =
4V
IC =
1A
VCE =
4V
IC =
3A
VCE =
4V
IC = 10 A
Collector-emitter
IB =
0.3 A
IC =
saturation voltage
IB =
2.5 A
IC = 10 A
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
UNIT
mA
mA
mA
40
(see Notes 5 and 6)
20
4
3A
1
(see Notes 5 and 6)
4
E
T
E
L
O
S
B
O
VCE =
4V
IC =
VCE =
4V
IC = 10 A
VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
3A
1.6
(see Notes 5 and 6)
3
V
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
1.56
°C/W
42
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 1 A
IB(on) = 0.1 A
IB(off) = -0.1 A
toff
Turn-off time
VBE(off) = -3.7 V
RL = 20 Ω
tp = 20 µs, dc ≤ 2%
0.3
µs
1
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS633AG
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
1·0
0·1
TCS633AB
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - DC Current Gain
1000
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IC =
IC =
IC =
IC =
1·0
0·1
E
T
E
L
O
S
B
O
1·0
0·01
0·01
10
1A
3A
6A
10 A
IC - Collector Current - A
0·1
1·0
10
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·8
TCS633AC
VBE - Base-Emitter Voltage - V
VCE = 4 V
TC = 25°C
1·6
1·4
1·2
1·0
0·8
0·6
0·1
1
10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS633AC
t p = 300 µs, d = 0.1 = 10%
t p = 1 ms, d = 0.1 = 10%
t p = 10 ms, d = 0.1 = 10%
DC Operation
10
1·0
0·1
BD245
BD245A
BD245B
BD245C
E
T
E
L
O
S
B
O
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS633AA
Ptot - Maximum Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.