ISC BD746A

Inchange Semiconductor
Product Specification
BD746/A/B/C
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-3PN package
·Complement to type BD745/A/B/C
·High current capability
·High power dissipation
APPLICATIONS
·For use in power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BD746
Collector-base voltage
-70
Open emitter
VEBO
-90
BD746C
-110
BD746
-45
Collector-emitter voltage
Emitter-base voltage
V
BD746B
BD746A
VCEO
UNIT
-50
BD746A
VCBO
VALUE
-60
Open base
V
BD746B
-80
BD746C
-100
Open collector
-5
V
IC
Collector current
-20
A
ICM
Collector current-peak
-25
A
IB
Base current
-7
A
PC
Collector power dissipation
TC=25℃
115
Ta=25℃
3.5
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Inchange Semiconductor
Product Specification
BD746/A/B/C
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD746
V(BR)CEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
-45
BD746A
-60
IC=-30mA; IB=0
V
BD746B
-80
BD746C
-100
VCEsat-1
Collector-emitter saturation voltage
IC=-5 A;IB=-0.5 A
-1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-20 A;IB=-5 A
-3.0
V
VBE -1
Base-emitter on voltage
IC=-5A ; VCE=-4V
-1.0
V
VBE -2
Base-emitter on voltage
IC=-20A ; VCE=-4V
-3.0
V
ICEO
Collector cut-off current
-0.1
mA
VCE=-50V; VBE=0
TC=125℃
VCE=-70V; VBE=0
TC=125℃
VCE=-90V; VBE=0
TC=125℃
VCE=-110V; VBE=0
TC=125℃
-0.1
-5.0
-0.1
-5.0
-0.1
-5.0
-0.1
-5.0
mA
-0.5
mA
BD746/A
VCE=-30V; IB=0
BD746B/C
VCE=-60V; IB=0
BD746
BD746A
ICBO
Collector cut-off current
BD746B
BD746C
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
40
hFE-2
DC current gain
IC=-5A ; VCE=-4V
20
hFE-3
DC current gain
IC=-20A ; VCE=-4V
5
150
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
IC=-5 A;IB1=-IB2=-0.5 A
VBE(off)=4.2V; RL=6Ω
tp=20μs
0.02
μs
0.12
μs
0.6
μs
0.3
μs
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
2
MAX
UNIT
1.1
℃/W
Inchange Semiconductor
Product Specification
BD746/A/B/C
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3