BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD895 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BD897 V CBO 80 BD901 100 45 BD899 V CEO BD901 Base-emitter voltage 60 BD895 BD897 UNIT 45 E T E L O S B O BD899 VALUE 60 80 V V 100 VEBO 5 IC 8 A IB 0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 70 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Operating free-air temperature range TA -65 to +150 °C Operating junction temperature range Tj -65 to +150 °C Tstg -65 to +150 °C Continuous collector current Continuous base current Storage temperature range V NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE(on) VF Collector-emitter TEST CONDITIONS MIN BD895 45 BD897 60 BD899 80 BD901 100 TYP MAX V IC = 100 mA IB = 0 VCE = 30 V IB = 0 BD895 0.5 Collector-emitter VCE = 30 V IB = 0 BD897 0.5 cut-off current VCE = 40 V IB = 0 BD899 0.5 breakdown voltage (see Note 3) VCE = 50 V IB = 0 BD901 0.5 VCB = 45 V IE = 0 BD895 0.2 VCB = 60 V IE = 0 BD897 0.2 VCB = 80 V IE = 0 BD899 0.2 Collector cut-off VCB = 100 V IE = 0 BD901 0.2 current VCB = 45 V IE = 0 TC = 100°C BD895 2 VCB = 60 V IE = 0 TC = 100°C BD897 2 VCB = 80 V IE = 0 TC = 100°C BD899 2 VCB = 100 V IE = 0 TC = 100°C BD901 2 VEB = 5V IC = 0 (see Notes 3 and 4) VCE = 3V IC = 3A (see Notes 3 and 4) IC = 3A IC = 3A Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage 12 mA VCE = IF = 3V mA mA 2 mA (see Notes 3 and 4) 2.5 V (see Notes 3 and 4) 2.5 V 3.5 V E T E L O S B O IB = UNIT 750 8 A NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.79 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 3 A IB(on) = 12 mA IB(off) = -12 mA 1 µs toff Turn-off time VBE(off) = -3.5 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AD 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 1·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 1·0 E T E L O S B O VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 TCS130AB 2·0 10 0·5 0·5 IC - Collector Current - A 1·0 TC = -40°C TC = 25°C TC = 100°C 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AC VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 10 IC - Collector Current - A Figure 3. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS130AD 1·0 0·1 BD895 BD897 BD899 BD901 E T E L O S B O 0.01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.