BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BD899 V CBO 60 80 BD901 100 BD895 45 BD897 BD899 UNIT 45 BD895 BD897 VALUE VCEO 60 80 V V 100 BD901 VEBO 5 Continuous collector current IC 8 A Continuous base current IB 0.3 A W Base-emitter voltage V Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 70 Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Operating free-air temperature range TA -65 to +150 °C Tj -65 to +150 °C Tstg -65 to +150 °C Operating junction temperature range Storage temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE(on) VF Collector-emitter TEST CONDITIONS MIN 45 BD897 60 BD899 80 BD901 100 TYP MAX IC = 100 mA IB = 0 VCE = 30 V IB = 0 BD895 0.5 Collector-emitter VCE = 30 V IB = 0 BD897 0.5 cut-off current VCE = 40 V IB = 0 BD899 0.5 breakdown voltage (see Note 3) BD895 V VCE = 50 V IB = 0 BD901 0.5 VCB = 45 V IE = 0 BD895 0.2 VCB = 60 V IE = 0 BD897 0.2 VCB = 80 V IE = 0 BD899 0.2 Collector cut-off VCB = 100 V IE = 0 BD901 0.2 current VCB = 45 V IE = 0 TC = 100°C BD895 2 VCB = 60 V IE = 0 TC = 100°C BD897 2 VCB = 80 V IE = 0 TC = 100°C BD899 2 VCB = 100 V IE = 0 TC = 100°C BD901 2 VEB = 5V IC = 0 (see Notes 3 and 4) VCE = 3V IC = 3A (see Notes 3 and 4) IC = 3A IC = 3A Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage IB = 12 mA VCE = IF = 3V UNIT mA mA 2 mA (see Notes 3 and 4) 2.5 V (see Notes 3 and 4) 2.5 V 3.5 V 750 8 A NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.79 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 3 A IB(on) = 12 mA IB(off) = -12 mA 1 µs toff Turn-off time VBE(off) = -3.5 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AD 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS130AB 2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 1·0 TC = -40°C TC = 25°C TC = 100°C 0·5 0·5 IC - Collector Current - A 1·0 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AC VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 10 IC - Collector Current - A Figure 3. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS130AD 1·0 0·1 BD895 BD897 BD899 BD901 0.01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5