BOURNS BD649-S

BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BD646, BD648, BD650 and BD652
●
62.5 W at 25°C Case Temperature
●
8 A Continuous Collector Current
●
Minimum hFE of 750 at 3V, 3 A
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
SYMBOL
BD645
80
BD647
100
BD649
V CBO
140
BD645
60
BD647
BD649
VCEO
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
UNIT
120
BD651
80
100
V
V
120
BD651
Emitter-base voltage
VALUE
VEBO
5
IC
8
V
A
ICM
12
A
IB
0.3
A
Ptot
62.5
W
Ptot
2
W
½LIC2
50
mJ
°C
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
BD645
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Collector-emitter
MAX
BD647
80
BD649
100
BD651
120
IC = 30 mA
IB = 0
VCE = 30 V
IB = 0
BD645
0.5
Collector-emitter
VCE = 40 V
IB = 0
BD647
0.5
cut-off current
VCE = 50 V
IB = 0
BD649
0.5
breakdown voltage
(see Note 5)
TYP
V
VCE = 60 V
IB = 0
BD651
0.5
VCB = 60 V
IE = 0
BD645
0.2
VCB = 80 V
IE = 0
BD647
0.2
VCB = 100 V
IE = 0
BD649
0.2
Collector cut-off
VCB = 120 V
IE = 0
BD651
0.2
current
VCB = 40 V
IE = 0
TC = 150°C
BD645
2.0
VCB = 50 V
IE = 0
TC = 150°C
BD647
2.0
VCB = 60 V
IE = 0
TC = 150°C
BD649
2.0
VCB = 70 V
IE = 0
TC = 150°C
BD651
2.0
VEB =
5V
IC = 0
(see Notes 5 and 6)
VCE =
3V
IC =
3A
Emitter cut-off
current
Forward current
transfer ratio
(see Notes 5 and 6)
UNIT
60
5
mA
mA
mA
750
2
Collector-emitter
IB =
12 mA
IC =
3A
saturation voltage
IB =
50 mA
IC =
5A
IB =
50 mA
IC =
5A
(see Notes 5 and 6)
3
V
IC =
3A
(see Notes 5 and 6)
2.5
V
Base-emitter
saturation voltage
Base-emitter
voltage
VCE =
3V
(see Notes 5 and 6)
2.5
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
2.0
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
2
TYP
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS130AD
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5
1·0
10
TCS130AB
2·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
1·5
1·0
TC = -40°C
TC = 25°C
TC = 100°C
0·5
0·5
IC - Collector Current - A
1·0
10
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AC
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
2·5
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
10
IC - Collector Current - A
Figure 3.
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAS130AC
1·0
0·1
BD645
BD647
BD649
BD651
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AC
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.