BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) SYMBOL BD645 80 BD647 100 BD649 V CBO 140 BD645 60 BD647 BD649 VCEO Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. UNIT 120 BD651 80 100 V V 120 BD651 Emitter-base voltage VALUE VEBO 5 IC 8 V A ICM 12 A IB 0.3 A Ptot 62.5 W Ptot 2 W ½LIC2 50 mJ °C Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BD645 V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) Collector-emitter MAX BD647 80 BD649 100 BD651 120 IC = 30 mA IB = 0 VCE = 30 V IB = 0 BD645 0.5 Collector-emitter VCE = 40 V IB = 0 BD647 0.5 cut-off current VCE = 50 V IB = 0 BD649 0.5 breakdown voltage (see Note 5) TYP V VCE = 60 V IB = 0 BD651 0.5 VCB = 60 V IE = 0 BD645 0.2 VCB = 80 V IE = 0 BD647 0.2 VCB = 100 V IE = 0 BD649 0.2 Collector cut-off VCB = 120 V IE = 0 BD651 0.2 current VCB = 40 V IE = 0 TC = 150°C BD645 2.0 VCB = 50 V IE = 0 TC = 150°C BD647 2.0 VCB = 60 V IE = 0 TC = 150°C BD649 2.0 VCB = 70 V IE = 0 TC = 150°C BD651 2.0 VEB = 5V IC = 0 (see Notes 5 and 6) VCE = 3V IC = 3A Emitter cut-off current Forward current transfer ratio (see Notes 5 and 6) UNIT 60 5 mA mA mA 750 2 Collector-emitter IB = 12 mA IC = 3A saturation voltage IB = 50 mA IC = 5A IB = 50 mA IC = 5A (see Notes 5 and 6) 3 V IC = 3A (see Notes 5 and 6) 2.5 V Base-emitter saturation voltage Base-emitter voltage VCE = 3V (see Notes 5 and 6) 2.5 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN 2.0 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W 2 TYP MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AD 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS130AB 2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 1·0 TC = -40°C TC = 25°C TC = 100°C 0·5 0·5 IC - Collector Current - A 1·0 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AC VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 10 IC - Collector Current - A Figure 3. MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS130AC 1·0 0·1 BD645 BD647 BD649 BD651 0.01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AC Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.